wuzhihao
- 职称职务：副教授电话：电邮：wuzhihao.sd@gmail.com地址： 个人简介教育背景
2004.8-2008.12 美国亚利桑那州立大学物理系材料与实验凝聚态物理专业博士
2001.9-2004.7复旦大学物理系凝聚态物理专业 硕士
1997.9-2001.7浙江师范大学物理系学士
工作经历
2008.12-华中科技大学武汉光电国家实验室，副教授，博士生导师
科研经历
在美国攻读博士学位期间，师从于氮化物半导体领域的知名专家Fernando A. Ponce教授，从事III族氮化物半导体外延材料和低维结构的外延生长机理和物理性质的研究。参与的主要研究项目有日本Nichia公司长期资助的“氮化物半导体材料物性研究”，美国能源部的“提高InGaN基绿色LED发光效率的研究”，美国高等国防研究署(DARPA)的“InGaN基电注入绿色激光VIGIL项目”。在2008年底回国工作后，继续从事氮化物半导体材料与器件的研究工作，重点研究高In组分InGaN基长波段区LED器件，和高Al组分AlGaN基深紫外光电器件这些目前还存在巨大挑战的课题。在Applied Physics Letters、Applied Physics Express、Journal of Applied Physics、Phys. Status Solidi A等国际SCI学术刊物上发表了近三十余篇半导体研究论文。
研究领域氮化物半导体材料与器件
主要学术成就Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semi-polar GaN. Applied Physics Letters , 31 January 2011, Vol. 98, 051902.
2.Z. H. Wu, Y. Q. Sun, J. Yin, Y.-Y Fang, J. N. Dai, C. Q. Chen, Q. Y. Wei, T. Li, K. W. Sun, A. M. Fischer and F. A. Ponce. Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrate.Journal of Vacuum Science and Technology B, 24 January 2011, Vol. 28, 021005.
3.Zhihao Wu, Kentaro Nonaka, Yohjiro Kawai, Toshiaki Asai, Fernando A. Ponce, Changqing Chen, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki. Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates. Applied Physics Express, 29 October 2010, Vol. 3, 111003.
4.Z. H. Wu, K. W. Sun, Q. Y. Wei, A. M. Fischer, F. A. Ponce, Y. Kawai, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki. Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO.Applied Physics Letters,18 February 2010, Vol.96, 071909.
5.Z. H. Wu, A. M. Fischer, F. A. Ponce, Toshiya Yokogawa and Shunji Yoshida.Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire. Applied Physics Letters, 7 July 2008, Vol, 93, 011901.
6.Z. H. Wu, A. M. Fischer, F. A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, and M. Kneissl.Structural and optical properties of non-polar GaN thin films. Applied Physics Letters, 29 April 2008, Vol 92, 171904.
7.Z. H. Wu, F. A. Ponce, J. Hertkorn, and F. Scholz.Determination of the electronic band structure for a graded modulation-doped AlGaN/AlN/GaN superlattice. Applied Physics Letters, 5 October 2007, Vol. 91, 142121.
8.Z. H. Wu, A. M. Fischer, F. A. Ponce, W. Lee, J. H. Ryou, D. Yoo, and R. D. Dupuis. Effect of internal electrostatic potential on light emission in a green LED with multiple InGaN quantum wells. Applied Physics Letters, 27 July 2007, Vol. 91, 041915.
9.Z. H. Wu, M. Stevens, F. A. Ponce, W. Lee, J. H. Ryou, D. Yoo, and R. D. Dupuis.Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography. Applied Physics Letters, 16 January 2007, Vol. 90, 032101.
10.Zhihao Wu, Yingxue Zhou, Xinyi Zhang, Shiqiang Wei and Dongliang Chen. Structure of grain boundaries in nanostructured ZnO.Applied Physics Letters, 12 May 2004,Vol 84, 4442.
11.Y. Q. Sun, Z. H. Wu*, J. Yin, Y.-Y Fang, H. Wang, C.H. Yu, Xiong Hui, C. Q. Chen, Q. Y. Wei, T. Li, K. W. Sun and F. A. Ponce, High quality a-plane GaN Films grown on cone-shaped patterned r-plane sapphire substrates, Thin Solid Films, 8 December 2010, Vol.519, 2508.
12.Yu Chen-Hui, Liu Cheng, Han Xiang-Yun, Kang Wei, Fang Yan-Yan, Dai Jiang-Nan,Wu Zhi-Hao, Chen Chang-Qing, Properties of Si doped AlGaN epilayers with diferent AlGaN window layer grown on high quality AlN bufer by MOCVD, CHIN.PHYS.LETT. 8 November 2010, Vol.28, 027301.
13.M. Song, Z. Wu*, Y. Fang Y , R. Xiang, Y. Sun Y,H. Wang ,C. Yu , H. Xiong, J. Dai, C. Chen. Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device structure. Journal of Optoelectronics and Advanced Materials, July 2010, Vol. 12, 1452.
14.R. F. Xiang, Y.-Y. Fang, J. N. Dai, L. Zhang, C. Y. Su, Z. H. Wu, C. H. Yu, H. Xiong, C. Q. Chen, and Y. Hao. High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1?xN interlayers via metal-organic chemical vapor deposition. Journal of Alloys and Compounds, 10 November 2010.
15.Q. Y. Wei, T. Li, Z. H. Wu, and F. A. Ponce. In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation. Phys. Status Solidi A 10 June. 2010, vol. 207, 226.
16.Xiangyun Han, Jiangnan Dai, Chenhui Yu, Zhihao Wu, Changqing Chen, Yihua Gao, Characterization of a-plane orientation ZnO film grown on GaN/Sapphire template by pulsed laser deposition, Applied Surface Science, 1 May 2010, vol.256, 4682.
17.Xiangyun Han, Yihua Gao, Jiangnan Dai, Chenhui Yu, Zhihao Wu, Changqing Chen andGuojia Fang, Nonpolar a-plane ZnO films grown on GaN/Sapphire templates with SixNy interlayer by pulsed laser deposition, J. Phys. D: Appl. Phys. 23 March 2010, vol.43, 145102.
18.H. D. Fonseca-Filho, C. M. Almeida, R. Prioli, M. P. Pires, P. L. Souza, Z. H. Wu, Q. Y. Wei, and F. A. Ponce. Growth of linearly ordered arrays of InAs nanocrystals on scratched InP,Journal of Applied Physics, 8 March 2010,Vol.107, 054313.
19.Qiyuan Wei, Zhihao Wu, Kewei Sun, Fernando A. Ponce, Joaquim Hertkorn1, and Ferdinand Scholz. Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures.Applied Physics Express, 27 November 2009, Vol.2, 121001.
20.F. A. Ponce, Q. Y. Wei, Z. H. Wu, H. D. Fonseca Filho, C. M. Almeida, R. Prioli, and D. Cherns. Nanoscale dislocation patterning by scratching in an atomic-force microscope. Journal of Applied Physics, 15 September 2009, Vol. 106, 076106.
21.J. N. Dai, X. Y. Han, Z. H. Wu, C. H. Yu, R. F. Xiang, Q. H. He, Y. H. Gao, C. Q. Chen, X. H. Xiao, T. C. Peng. Growth of non-polar ZnO films on a-GaN/r-Al2O3 templates by radio frequency magnetron sputtering. Journal of Alloys and Compounds, 25 September 2009, Vol. 489, 519.
22.J. Hertkorn, S. B. Thapa, T. Wunderer, F. Scholz, Z. H. Wu, Q. Y. Wei, F. A. Ponce, M. A. Moram, C. J. Humphreys, C. Vierheilig, and U. T. Schwarz. Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 14 July 2009, Vol.106, 013720.
23.J. N. Dai, Z. H. Wu, C. H. Yu, Q. Zhang, Y. Q. Sun, Y. K. Xiong, X. Y. Han, L. Z. Tong, Q. H. He, F. A. Ponce and C. Q. Chen. Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers. Journal of Electronic Materials, 11June2009, Vol. 38, 1938.
24.Alec M. Fischer, Zhihao Wu, Kewei Sun, Qiyuan Wei, Yu Huang, Ryota Daisuke Iida1, Motoaki Iwaya, Hiroshi Amano, and Fernando A. Ponce. Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN. Applied Physics Express, 3 April 2009, Vol. 2, 041002.
25.Cheng Liu, Jiangnan Dai, Zhihao Wu, Xiangyun Han, Qinghua He, Chenhui Yu, Lei Zhang, Yihua Gao and Changqing Chen, Epitaxial growth a-plane ZnO films on a-GaN/r-Al2O3 templates, Proc. of SPIE, 19 February 2009, Vol. 7279, 72791L-1.
26.Hu Wang, Ruofei Xiang, Qiang Zhang, Jiangnan Dai, Qinghua He, Zhihao Wu, Changqing Chen. High quality AlN films grown by pulsed atomic-layer epitaxy. Proc. of SPIE, 19 February 2009, Vol. 7279, 72791J-1.
27.Jiangnan Dai, Zhihao Wu, Xiangyun Han, Qinghua He, Yuqing Sun, Chenhui Yu, Lei zhang, Liangzhu Tong, Yihua Gao and Changqing Chen. High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates. Proc. of SPIE, 19 February 2009, Vol. 7279, 72791B-1.
28.J. P. Liu, J.-H. Ryou, Z. Lochner, J. Limb, D. Yoo, R. D. Dupuis, Z. H. Wu, A. M. Fischer, and F. A. Ponce.Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition.Journal of Crystal Growth,15 November 2008, Vol.310, 5166.
29.J.-H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, and R. D. Dupuis, Z. H. Wu, A. M. Fischer, and F. A. Ponce.Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes.Applied Physics Letters, 11 March 2008, Vol, 92, 101113.
30.L. T. Tan, R. W. Martin, K. P. O’Donnell, I. M. Watson, Z. H. Wu, and F. A. Ponce. Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates. Applied Physics Letters, 25 January 2008, Vol. 92, 031907.
31.J. P. Liu, J. B. Limb, J.-H. Ryou, D. Yoo, C. A. Horne, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, A. D. Hanser, L. Liu, E. A. Preble, and K. R. Evans. Blue light-emitting diodes grown on freestanding (11-20) a-plane GaN substrates. Applied Physics Letters, 8 January 2008, Vol. 92, 011123.
获奖与荣誉称号
主要学术兼职
收起 展开
