男，汉族，1987年出生，工学博士，毕业于电子科技大学电子薄膜与集成器件国家重点实验室，曾参研多项国家重点研究项目，目前在电子与通信工程学院从事教学与科研工作，在研项目1项。近五年来在Journal of Alloys and Compounds, Nanophotonics，Journal of Materials Science，IEEE Electron Device Letters等国内外知名期刊上发表论文12篇，其中以第一作者身份发表SCI论文5篇。
主要研究方向：二维半导体薄膜及其器件应用，集成电路设计。
相关发表论文：
1. T.J. Dai, et al. Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition [J]. Journal of Electronic Materials, 2018, 47: 6709-6715.
2. T.J. Dai, et al. Layer-controlled synthesis of wafer-scale MoSe2 nanosheets for photodetector arrays [J]. Journal of Materials Science, 2018, 53: 8436-8444.
3. T.J. Dai, et al. Synthesis of Few-Layer 2H-MoSe2 Thin Films with Wafer-level Homogeneity for High-Performance Photodetector [J], Nanophotonics, 2018, 7: 1959–1969.
4. T.J. Dai, et al. High performance photodetectors constructed on atomically thin few-layer MoSe2 synthesized using atomic layer deposition and a chemical vapor deposition chamber [J], Journal of Alloys and Compounds, 2019, 785: 951-957.
5. T.J. Dai, et al. Two-Dimensional MoSe2/Graphene Heterostructure Thin Film with Wafer-Scale continuity via Van der Waals Epitaxy [J], Chemical Physics Letters, 2020, 755: 137762.
6. Y.X. Ren, T.J. Dai, et al. Fabrication of lead selenide thin film photodiode for near-infrared detection via O-2-plasma treatment [J], Journal of Alloys and Compounds, 2018, 753(15):6-10.
7. Y.X. Ren, T.J. Dai, et al. Fabrication of High-Gain Photodetector With Graphene–PbSe Heterostructure [J]. IEEE Electron Device Letters, 2019, 40:48-50.