朱兆旻，男，高级研究员，2002年1月毕业于复旦大学，获博士学位，曾就职于日本广岛大学和新加坡南洋理工大学，主要研究方向为物联网工程中的芯片设计、制造和人工智能，公开发表论文64篇，其中SCI收录10篇，EI收录30篇，全国中文核心12篇，主持国家级项目1项，拥有国际发明专利5项。
兴趣广泛，爱好旅游、篮球、乒乓球、游泳和美食等。


担任课程教学：
《CMOS模拟集成电路设计技术》，《MATLAB编程技术》，《模拟电路基础》，《近代物理》，《半导体材料》，《集成电路测试技术》，《半导体工艺》


近几年承担项目情况：
● 导轨式多功能电能表长寿命电路研究
● 基于嵌入式系统的近红外人脸识别和RFID双验证系统
● 具有人类检测、识别和跟踪功能的芯片设计
● 双栅和环栅半导体器件的建模


近几年发表论文情况：
Wenjia Zhang, Bing Wang, Zhaomin Zhu, Kenneth Eng-Kian Lee, Jürgen Michel, Li-Shiuan Peh, Li Zhang, Soo-Jin Chua, “Ultralow-Power LED-Enabled On-Chip Optical Communication Designed in the III-Nitride and Silicon CMOS Process Integrated Platform”, IEEE Design & Test 31(5): 36-45 (2014)
Chunhong Lu, Zhaomin Zhu, Xiaofeng Gu, “An intelligent system for lung cancer diagnosis using a new genetic algorithm based feature selection method,”J Med Syst 2014 Sep 4;38(9):97
朱兆旻,赵青云,于宝旗,“含弹道输运模型的纳米尺寸GaAs HEMT 电流方程,”«半导体技术»2014 年9 月,Vol 39, No 9, 679-683 页
Wang Fuxue, Cai Xiaolong, Yan Dawei, Zhu Zhaomin, Xiao Shaoqing, and Gu Xiaofeng, “Synthesis and luminescence characteristics of ZnO nanotubes”, Journal of Semiconductors, Vol. 35, No. 9, Sept 2014
朱兆旻,王睿,赵青云,顾晓峰,“短沟道双栅MOSFET 的亚阈值特性分析,”«固体电子学研究与进展»2014 年第34 卷第2 期,101-105 页
朱兆旻,张存,“硅纳米管和纳米线场效应晶体管的模拟和比较,”«微纳电子技术»,2014 年第4期, 209-213+235 页
朱兆旻;王有航,“无源电子元件忆阻器的建模和参数分析”,«电子元件与材料»,2014 年第8 期, 62-65 页
Zhu, Zhaomin; Yan, Dawei; Xu, Guoqing; Gu Xiaofeng, “Drain current model of double-gate MOSFETs considering both electrons and holes,”IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING , Vol. 9, No. 3, MAY 2014, pp: 262-266
Zhu Zhaomin, Yan Dawei, Xu Guoqing, Peng Yong, and Gu Xiaofeng, “A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs,”Journal of Semiconductor Technology and Science, Vol. 13, No. 3, June 2013, pp: 237-244
Chunhong Lu, Zhaomin Zhu, Xiaofeng Gu, “Kernel Parameter Optimization in Stretched Kernel-Based Fuzzy Clustering,” PSL, 2013, pp: 49-57
Huan Dai, Zhao-min Zhu, Xiao-Feng Gu, “Multi-target indoor localization and tracking on video monitoring system in a wireless sensor network.”, J. Network and Computer Applications Vol. 36 No. 1 Pg. 228-234
KE Yichen,LIANG Hailian,GU Xiaofeng,ZHU Zhaomin,DONG Shurong,“Investigation on Bi-directional SCR ESD Protection Devices in a 0. 18µm RF CMOS Process”,RESEARCH& PROGRESS OF SSE,June 2013,Vol. 33, No. 3, pp 284-288
Yan Da-Wei, Zhu Zhao-Min, Cheng Jian-Min, Gu Xiao-Feng, Lu Hai, “Forward Current Transport Mechanism and Schottky Barrier Characteristics of a Ni/Au Contact on n-GaN,”Chinese Physics Letters, vol. 29, no. 8, 2012
Yan Dawei, Wang Fuxue, Zhu Zhaomin, Cheng Jianmin, Gu Xiaofeng,AlGaN/GaN 异质结电容与电导色散研究[J].半导体学报, 2013, 34(1):014003-4
Z. H. Chen, X. Zhou, G. H. See, Z. M. Zhu, and G. J. Zhu, "Interface Traps in Surface-Potential-Based MOSFET Models," Proc. of the 12th International Conference on Modeling and Simulation of Microsystems (WCM-Nanotech2009), Houston, TX, May 2009, Vol. 3, pp. 542-545.
X. Zhou, G. H. See, G. J. Zhu, Z. M. Zhu, S. H. Lin, C. Q. Wei, A. Srinivas, and J. B. Zhang, "New Properties and New Challenges in MOS Compact Modeling," Proc. of the 11th International Conference on Modeling and Simulation of Microsystems WCM-Nanotech2008), Boston, MA, Jun. 2-5, 2008, Vol. 3, pp. 750-755.
G. H. See, X. Zhou, G. Zhu, Z. Zhu, S. Lin, C. Wei, J. Zhang, and A. Srinivas, "Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Any Body Doping," Proc. of the 11th International Conference on Modeling and Simulation of Microsystems (WCM-Nanotech2008), Boston, MA, Jun. 2-5, 2008, Vol. 3, pp. 770-773.
G. H. See, X. Zhou, G. Zhu, Z. Zhu, S. Lin, C. Wei, J. Zhang, and A. Srinivas, "Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Quantum Mechanical Correction," Proc. of the 11th International Conference on Modeling and Simulation of Microsystems (WCM-Nanotech2008), Boston, MA, Jun. 2-5, 2008, Vol. 3, pp. 756-759.
G. J. Zhu, G. H. See, X. Zhou, Z. M. Zhu, S. H. Lin, C. Q. Wei, J. B. Zhang, and A. Srinivas, "Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs," Proc. of the 11th International Conference on Modeling and Simulation of Microsystems (WCM-Nanotech2008), Boston, MA, Jun. 2-5, 2008, Vol. 3, pp. 760-763.
X. Zhou, G. H. See, G. J. Zhu, Z. M. Zhu, S. H. Lin, C. Q. Wei, A. Srinivas, and J. B. Zhang, "New Challenges in MOS Compact Modeling for Future Generation CMOS," (Invited Paper), Proc. of the 2008 IEEE International Nanoelectronics Conference (INEC2008), Shanghai, China, Mar. 24-28, 2008.
G. H. See, X. Zhou, K. Chandrasekaran, S. B. Chiah, Z. M. Zhu, C. Q. Wei, S. H. Lin, G. J. Zhu, and G. H. Lim, "A Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and Applicable to Asymmetric MOSFETs," IEEE Trans. Electron Devices, Vol. 55, No. 2, pp. 624-631, Feb. 2008.
X. Zhou, Z. M. Zhu, et al, "Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi Nonequilibrium," IEEE Trans. Electron Devices, Vol. 54, No. 2, February 2008
Z. M. Zhu, X. Zhou, et al, IET Electronics Letters, “Analytic and explicit current model of undoped double-gate MOSFETs”, Vol. 43, No. 26, December 2007.