教授

刘扬，中山大学电子与信息工程学院教授，博士生导师，中山大学电力电子及控制技术研究所所长、广东省第三代半导体GaN材料与器件工程技术研究中心主任。2001年在国际著名异质材料外延技术先端研发机构--日本名古屋工业大学从事氮化镓(GaN)材料和器件研究工作，期间被聘为日本学术振兴会(JSPS)外国人特别研究员。2007年归国，以“****”教授身份加盟中山大学，负责组建国内首家GaN功率电子材料与器件研发平台，开展关键技术的研究，同时积极联合国内龙头企业，促进产学研结合，整合产业链条，推动大尺寸Si衬底GaN功率电子材料与器件产业技术的开发。先后承担国家科技部、国家自然基金委、广东省科技计划项目多项。2014年末该研发平台被广东省科技厅认证为广东省第三代半导体GaN电力电子材料与器件工程技术研发中心。2017年刘扬教授入选国际功率半导体业界权威会议组织IEEE ISPSD 技术委员会（International Symposium on Power Semiconductor Devices & ICs，Technical Program Committee (TPC) Member），成为GaN领域进入该学术组织的首位中国大陆****。
联系方式：
邮箱：liuy69@mail.sysu.edu.cn
电话：
通讯地址：广州市大学城外环东路132号中山大学纳米楼（邮编510006）

学术兼职和社会服务:
1. IEEE ISPSD（ International Symposium on Power Semiconductor Devices & ICs），Technical Program Committee (TPC) Member）
2. IEEE EDS (Electron Devices Society) Power Devices and ICs Committee Member
3. 中国电源学会理事
4. 中国电工学会电力电子学会理事
5. 中国电源学会元器件专业委员会委员
6. 中国宽禁带功率半导体产业联盟专家委员会GaN器件组成员
7. 中国有色金属学会宽禁带半导体专业委员会委员
8.《电力电子技术》杂志编辑委会委员
9.? 2017年《电力电子技术》“宽禁带半导体电力电子器件”专辑特邀主编
10. 2019年《电源学报》“GaN功率电子器件及应用”专辑特邀主编

教育经历:
博士（2000年），吉林大学微电子学与固体电子学专业
学士（1991年）硕士（1994年）吉林大学半导体物理与半导体器件物理专业

授课课程:
本科:《微电子学导论》《半导体物理导论》《基础物理实验课》
研究生：《宽禁带半导体材料与器件》

研究方向:
主要从事宽禁带III族氮化物（GaN）功率半导体材料与器件研究，包括：
GaN器件制备及材料物性研究
GaN功率半导体器件及物理器件制备
GaN功率器件稳定性、可靠性机理研究
GaN功率器件驱动及单片功率集成技术的研究
新型GaN电力电子器件在电源管理、光伏逆变、电机驱动等方向的系统集成技术研究

科研项目:
主持承担了国家重点研发计划课题项目、国家自然基金面上及重点项目、国家科技部国际合作项目、省重大科技项目、省自然基金团队、省国际合作项目十余项。目前在研项目有：
1. 国家重点研发计划课题项目，主持
2. 国家自然科学基金联合基金重点项目，主持
3. 广东省应用型科技研发专项资金项目，主持
4. 广东省自然科学基金团队项目，主持

代表性科研成果:
L.A. Li, W.J. Wang, L. He, X.R Zhang , Z.S Wu, Yang Liu*，Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device, Journal of Alloys and Compounds ,Vol.728, p400-403, 2017.09
L. He, L.A. Li, Y. Zheng, F. Yang, Z. Shen, Z. J. Chen, W.J. Wang, J. l. Zhang, X. R. Zhang, L. He, Z.S Wu, B.J. Zhang, Yang Liu*, The Influence of Al composition in AlGaN back barrier layer on leakage current and dynamic R_ON characteristics of AlGaN/GaN HEMTs, Physica Status Solidi A, Vol.214,No.8, p**, 2017.08
L.A. Li, W.J. Wang, L. He, J. L. Zhang, Z.S Wu, B.J. Zhang, Yang Liu*, Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application, Materials Science in Semiconductor Processing, Vol.67, p141-146, 2017.08
Z. J. Chen, L.A. Li, Z.Y. He, F. Yang, L. He, Z.S Wu, B.J. Zhang, Yang Liu*, Enhanced voltage blocking ability of AlGaN/GaN HFETs-on-Si by eliminating leakage path introduced by LT-AlN interlayers, Japanese Journal of Applied Physics, Vol.56, No.6,p065503, 2017.06
L. He, F. Yang, L.A. Li, Z. J. Chen, Z. Shen, Y. Zheng, Y. Yao , Y.Q. Ni, D.Q. Zhou, X.R Zhang, L. He, Z.S Wu, B.J. Zhang,Yang Liu*, High Threshold Voltage Uniformity and Low Hysteresis Recessed Gate Al2O3/AlN/GaN MISFET by Selective Area Growth, IEEE Transactions on Electron Devices, VOL. 64, NO. 4, p1554-1560, 2017.04
Z. Shen, L. He, G.L. Zhou, Y. Yao, F. Yang, Y.Q. Ni, Y. Zheng, D.Q. Zhou, J.P. Ao , B.J. Zhang, Yang Liu*, Investigation of O₃-Al₂O₃/H₂O-Al₂O₃?dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors, physica status solidi (a), Vol.213, No.10, pp 2693-8, 2016.10
Y. Zheng, F. Yang, L. He, Y. Yao, Z. Shen, G.L. Zhou, Z.Y. He, Y.Q. Ni, D. Q.Zhou, J. Zhong, X. R. Zhang, L. He, Z. S. Wu, B. J. Zhang, Yang. Liu*, Selective Area Growth: A Promising Way for Recessed Gate GaN MOSFET With High Quality MOS Interface, IEEE Electronic Devices Letters, Vol. 37, No.9, p1193-1196, 2016.09
F. Yang, L. He, Y. Zheng, L.A. Li, Z. J. Chen, D.Q. Zhou, Z.Y. He, Y. Yao, Y.Q. Ni, Z. Shen, X. R. Zhang, L. He, Z.S Wu, B. J. Zhang, Yang Liu* , Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure, Journal of Materials Science: Materials in Electronics, Vol.27, Issue 9, pp 9061–9066, 2016.09
Y.Q. Ni, L. He, D.Q. Zhou, Z.Y. He, Z. J. Chen, Y. Zheng, F. Yang, Z. Shen, X. R. Zhang, L. He, Z.S Wu, B. J. Zhang, Yang Liu*, Low-leakage current and high-breakdown voltage GaN-on-Si(111) System with an AlGaN impurity blocking layer, Journal of Materials Science: Materials in Electronics, Vol.27, Issue 5, pp 5158-5163, 2016.05
D.Q. Zhou, Y.Q. Ni, Z.Y. He, F. Yang, Y. Yao, Z. Shen, J. Zhong, G.L. Zhou, Y. Zheng, L. He, Z.S Wu, B. J. Zhang, Yang Liu*, Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis, physica status solidi (c), Vol. 13, No.5-6, p.345-349, 2016.05
L.A. Li, X.Z. Wang, Yang Liu*, J.P. Ao*, NiO/GaN heterojunction diode deposited through magnetron reactive sputtering, Journal of Vacuum Science& Technology A, Vol. 34, Issue 2, p02D104, 2016.03
L.A. Li, J.Q. Zhang, Yang Liu*, and J.P. Ao*, Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature, Chinese Physics B, Vol. 25, No.3, p038503, 2016.03
Y.Q. Ni, D.Q. Zhou, Z. J. Chen, Y. Zheng, Z.Y. He, F. Yang, Y. Yao, G.L. Zhou, Z. Shen, J. Zhong, Z.S Wu, B. J. Zhang, Yang Liu*, Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate, Semiconductor Science and Technology, Vol.30, p105037 (9p), 2015.09
F. Yang, Y. Yao, Z.Y. He, G.L. Zhou, Y. Zheng, L. He, J.C. Zhang, Y.Q. Ni, D.Q. Zhou, Z. Shen, J. Zhong, Z.S Wu, B. J. Zhang, Yang Liu*, The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET, Journal of Materials Science: Materials in Electronics, Vol.26, Issue 12, p9753-9758, 2015.09
J. Zhong, Y. Yao, Y. Zheng, F. Yang, Y.Q. Ni, Z.Y. He, Z. Shen, G.L. Zhou, D.Q. Zhou, Z.S Wu, B. J. Zhang, ?Liu Yang*, Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode, Chinese Physics B, Vol. 24, No. 9, p097303, 2015.09
Y. Jiang, Q.P. Wang, F.Z. Zhang, L.A. Li, D.Q. Zhou, Yang Liu, Dejun Wang, Jin-Ping Ao*, Reduction of leakage current by O₂plasma treatment for deviceisolation of AlGaN/GaN heterojunction field-effect transistors, Applied Surface Science,Vol.351, p1155–1160,2015.06
Y.Q. Ni, Z.Y. He, Y. Yao, F. Yang, D.Q. Zhou, G.L. Zhou, Z. Shen, J. Zhong n, Y. Zheng, B. J. Zhang, Liu Yang*, Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate, Chinese Physics B, Vol. 24, No. 5, p057303 , 2015.05
Y.Q. Ni, Z.Y. He, D.Q. Zhou, Y. Yao, F. Yang, G.L. Zhou, Z. Shen, J. Zhong, Y. Zheng, B. J. Zhang, Yang Liu*, The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si(111) template, Superlattices and Microstructures, Vol.83, p811–818 , 2015.03
Y. Yao, J. Zhong, Y. Zheng, F. Yang, Y.Q. Ni, Z.Y. He, Z. Shen, G.L. Zhou, S. Wang, J.C.? Zhang, J. Li, D.Q. Zhou, Z.S Wu, B. J. Zhang, Yang Liu*, Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode, Japanese Journal of Applied Physics, Vol. 54, p011001 ,2015.01
Y.Q. Ni, Z.Y. He, F. Yang, D.Q. Zhou, Y. Yao, G.L. Zhou, Z. Shen, J. Zhong, Y. Zheng, Z.S Wu, B. J. Zhang, Yang Liu*, Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system, Japanese Journal of Applied Physics, Vol. 54, p015505 ,2015.01
Y. Yao, Z.Y. He, F. Yang, Z. Shen, J.C. Zhang, Y.Q. Ni, Jin Li, S. Wang, G.L. Zhou, J. Zhong, Z.S Wu, B. J. Zhang, J.P. Ao and Yang Liu*, Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique, Applied Physics Express. Vol. 7, No. 1, p016502,2014.01
Z.Y. He, Y.Q. Ni, F. Yang, J. Wei, Y. Yao, Z. Shen, P. Xiang, M.G. Liu, S. Wang, J.C. Zhang, Z.S Wu, B. J. Zhang, and Yang Liu*, Investigations of leakage current properties in semi-insulating GaN grown on Si (111) substrate with low-temperature AlN interlayers, Journal of Physics D: Applied Physics, Vol. 47, No. 4, p045103 ,2014.01
Y.Q. Ni, Z.Y. He, J. Zhong, Y. Yao, F. Yang, P. Xiang, B. J. Zhang, and Liu Yang*, Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers, Chinese Physics B, Vol. 22, No. 8, p088104,2013.04
Z.Y. He, J.L. Li, Y.H. Wen, Z. Shen, Y. Yao, F. Yang, Y.Q. Ni, Z.S Wu, B. J. Zhang, and Yang Liu*, Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors, Japanese Journal of Applied Physics, Vol.51, p054103,2012.05
Y.H. Wen, Z.Y. He, J.L. Li, R.H. Luo, P. Xiang, Q.Y. Deng, G.N. Xu, Z. Shen, Z.S Wu, B. J. Zhang, H. Jiang, G. Wang, and Yang Liu*, “Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique, Applied Physics Letters, Vol.98, p072108, 2011.02