副教授

电子与信息工程学院副教授，****，广东省****。2013年在香港中文大学获得电子工程学博士学位，随后成为香港中文大学电子工程学系博士后。2017年3月加入中山大学电子与信息工程学院，广东省显示材料重点实验室。主要军队新型二维半导体材料生长与相关微纳电子，光电子器件研究。包括二维柔性电子器件，可穿戴电子与类神经网络器件，红外及太赫兹多个光电探测器等。
联系方式：
chenk69@mail.sysu.edu.cn
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教育经历:
2009.8 – 2013.5香港中文大学电子工程学博士
2005.9 – 2008.6华南师范大学微电子学与固体电子学硕士
2001.9 – 2005.7华中科技大学信息与计算科学/光信息科学与技术学士

授课课程:
本科生课程：
线性代数
数学物理方法
研究生课程：
纳米光子学

研究方向:
1.二维微纳电子器件：柔性电子器件，可穿戴电子器件与类神经网络器件
2.二维光电探测器件：中远红外及太赫兹双重
3.二维材料生长，生长机理与电学性能第一性原理计算
招生/招聘方向：电子科学与技术（微电子学与固体电子学），集成电路，电子与通信工程
招收硕士，博士，博士后。
欢迎微电子，光电子，应用物理，材料物理，化学等背景的同学报考。

科研项目:
中山大学****引进人才启动人才，30万，2017年3月— 2020年2月，主持。
国家自然科学基金青年项目，25万，2019年1月— 2021年12月，主持。
广东省****项目，100万，2018年5月— 2022年4月，主持。
广州市科技计划一般项目，20万，2019年4月— 2023年3月，主持。

代表性科研成果:
X. Wan*, X. Miao, J. Yao, S. Wang, F. Shao, S. Xiao, R. Zhan, K. Chen*, X. Zeng, X. Gu, J. Xu*,?In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors. ?Advanced Materials, 2021, **.?DOI: 10.1002/adma.?(IF:27.398)
Wan, X.?^#*; Li, H.^#;?Chen, K.*; and Xu, J.*, Towards Scalable Fabrications and Applications of 2D Layered Material-based Vertical and Lateral Heterostructures.?Chem. Res. Chinese Universities?, 2020, 36(4), 525-550?
Tao, L.^#;?Chen, K.^#*; Chen, Z.^#; Cong, C.; Qiu, C.; Chen, J.; Wang, X.; Chen, H.; Yu, T.; Xie, W.; Deng, S.; Xu, J.*,1T' transition metal telluride atomic layers for plasmon-free SERS at femtomolar levels.?J. Am. Chem. Soc.?2018, 140 (28), 8696-8704 (IF:14.357)
Chen, K.^#*; Chen, Z.^?#; Wan, X.; Zheng, Z.; Xie, F.; Chen, W.; Gui, X.; Chen, H.; Xie, W.; Xu, J.*, A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties.?Advanced Materials?2017, 29 (38), **. (IF:27.398)
Chen, K.^?#; Wan, X.^?#; Xu, J. B.*, Epitaxial Stitching and Stacking Growth of Atomically Thin Transition-Metal Dichalcogenides (TMDCs) Heterojunctions.?Advanced Functional Materials?2017, 27 (19), **. (IF:13.325)
Wan, X.^#;?Chen, K.^?#*; Chen, Z. F.; Xie, F. Y.; Zeng, X. L.; Xie, W. G.; Chen, J.; Xu, J. B.*, Controlled Electrochemical Deposition of Large-Area MoS2 on Graphene for High-Responsivity Photodetectors.?Advanced Functional Materials?2017, 27 (19), **. (IF:13.325)
X. Wan^#,?K. Chen^#, W. Xie, J. Wen, H. Chen, J. B. Xu*, Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS₂?through a Self-Limited Growth Strategy by Interface Engineering.?Small?2016,?12, 438-445. (IF:9.598)
K. Chen^#, X. Wan^#, W. Xie, J. Wen, Z. Kang, X. Zeng, H. Chen, J. Xu*, Lateral Built-In Potential of Monolayer MoS₂–WS₂?In-Plane Heterostructures by a Shortcut Growth Strategy.?Advanced Materials??2015,?27, 6431-6437. (IF:21.950)
K. Chen^#, X. Wan^#, J. Wen, W. Xie, Z. Kang, X. Zeng, H. Chen, J. B. Xu*, Electronic Properties of MoS₂–WS₂?Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.?Acs Nano?2015,?9, 9868-9876. (IF:13.709)
X. Wan^#,?K. Chen^#, J. Xu*, Interface Engineering for CVD Graphene: Current Status and Progress.?Small?2014,?10, 4443-4454. (IF:9.598)
K. Chen^#, X. Wan^#, D. Liu, Z. Kang, W. Xie, J. Chen, Q. Miao, J. Xu*, Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature.??Nanoscale?2013,?5, 5784-5793.
K. Chen^#, X. Wan^#, J. B. Xu*, Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure.?Journal of Materials Chemistry C??2013,?1, 4869-4878.
K. Chen, X. Wang, J.-B. Xu*, L. Pan, X. Wang and Y. Shi, Electronic Properties of Graphene Altered by Substrate Surface Chemistry and Externally Applied Electric Field.?The Journal of Physical Chemistry C, 2012, 116, 6259–6267.
X. Wan^#,?K. Chen^#, D. Q. Liu, J. Chen, Q. Miao, J. B. Xu*, High-Quality Large-Area Graphene from Dehydrogenated Polycyclic Aromatic Hydrocarbons.?Chemistry of Materials?2012,?24, 3906-3915.(IF:9.890)
K. Chen, G.H. Fan*, Y. Zhang, S.F. Ding, First-Principle Calculation of Nitrogen-Doped?p-Type ZnO.?Acta Physico-Chimica Sinica?2008,24, 61-66.
K. Chen, G.H. Fan*, Y. Zhang, First principles study of optical properties of wurtzite ZnO with Mn-doping.??Acta Physica Sinica?2008, 57, 1054-1060.
K. Chen, G.H. Fan*, Y. Zhang, S.F. Ding, First principles study of In-N codoped ZnO.?Acta Physica Sinica?2008, 57, 3138-3147.
L. Tao,?Chen K., Z. Chen, W. Chen, X. Gui, H. Chen, X. Li, J.B. Xu*, Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries ,?ACS Applied Materials & Interfaces, 9 (13), 2017, 12073-12081.
X. Wan,?K. Chen, J. Du, D. Q. Liu, J. Chen, X. Lai, W. G. Xie, J. B. Xu*, Enhanced Performance and Fermi-Level Estimation of Coronene-Derived Graphene Transistors on Self-Assembled Monolayer Modified Substrates in Large Areas.?The Journal of Physical Chemistry C?2013,?117, 4800-4807.
Z. Kang, H. Lu, J. Chen,?K. Chen, F. Xu, H. P. Ho*, Plasmonic graded nano-disks as nano-optical conveyor belt.?Optics Express?2014, 22, 19567-19572.
Z. Kang, J. Chen, S. Y. Wu,?K. Chen, S. K. Kong, K. T. Yong, H. P. Ho*, Trapping and assembling of particles and live cells on large-scale random gold nano-island substrates.?Scientific Reports?2015, 5, 9978.
S.F. Ding, G.H. Fan*, S.T.Li,?K. Chen, B. Xiao, Theoretical study of Be_xZn_1-xO alloys.?Physica B?2007, 394,127-131.