副教授

博士，中山大学"****"引进人才，硕士生导师
联系方式：lux86@mail.sysu.edu.cn

教育经历:
2010.09 – 2014.11? ? ? ?香港科技大学? ? ? ?电子及计算机工程学系? ? ? ?博士
2006.09 – 2010.06? ? ? ?复旦大学? ? ? ? ? ? ? 微电子学系? ? ? ? ? ? ? ? ? ? ? ? 学士

研究方向:
微纳电子器件和集成芯片、MEMS和光电集成芯片、宽禁带半导体等

科研项目:
国家自然科学基金青年项目
广东省自然科学基金面上项目
广东省前沿与关键技术创新专项资金粤港合作专题项目
广州市科技计划对外科技合作项目

代表性科研成果:
论著
Z. Liu, T. Huang, Q. Li, X. Lu, and X. Zou, “Synthesis Lectures on Emerging Engineering Technologies: Compound Semiconductor Materials and Devices”, Morgan & Claypool Publishers, 2016.
论文
H. Luo, H. Jiang, Z. Chen, Y. Pei, Q. Feng, H. Zhou, X. Lu*, K. M. Lau, and G. Wang, "Leakage Current Reduction in β-Ga₂O₃ Schottky Barrier Diodes by CF₄ Plasma Treatment," Electron Device Letters, IEEE. 41, 9, 1312-1315, 2020.
X. Lu, X. Zhou, H. Jiang, K. W. Ng, Z. Chen, Y. Pei, K. M. Lau, and G. Wang, “1-kV Sputtered p-NiO/n-Ga₂O₃ Heterojunction Diodes With an Ultra-Low Leakage Current Below 1 μA/cm²”, Electron Device Letters, IEEE. 41, 3, 449-452, 2020.
Y. Wang, Y. Gu, X. Lu*, H. Jiang, H. Guo, B. Chen, K. M. Lau, And X. Zou*, “Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K”, Journal of the Electron Devices Society, IEEE. 8, 850-856, 2020.
J. Chen, M. Zhu, X. Lu*, and X. Zou*, “Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures”, Applied Physics Letters, 116, 062102, 2020.
X. Lu, X. Zhang, H. Jiang, X. Zou, K. M. Lau, and G. Wang, “Vertical β-Ga₂O₃ Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance”, Physica Status Solidi A, **, 2019.
Y. Ren, L. Zhou, K. Zhang, L. Chen, X. Ouyang, Z. Chen, B. Zhang, and X. Lu*, “Study of 14.9 MeV Neutron Irradiation Effects on Ni/GaN Schottky Contacts Using Low-Frequency Noise Spectroscopy”, Physica Status Solidi A, **, 2019.
L. Zhou, X. Lu*, J. Wu, H. Jiang, L. Chen, X. Ouyang and K. M. Lau, “Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes”, Electron Device Letters, IEEE. 40, 7, 1044-1047, 2019.
X. Lu, S. Yang, H. Jiang, J. Wu, “Monolithic integration of GaN LEDs with vertical driving MOSFETs by selective area growth and band engineering of the p-AlGaN electron blocking layer through TCAD simulation”, Semiconductor Science and Technology, 34, 064002, 2019.
L. Zhou, X. Lu*, L. Chen, X. Ouyang, B. Liu, J. Xu and H. Tang, “Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on (-201) β-Ga₂O₃ Grown by Edge-Defined Film-Fed Growth”, ECS Journal of Solid State Science and Technology, 8, Q3054-Q3057, 2019.
X. Lu, L. Zhou, L. Chen, X. Ouyang, H. Tang, B. Liu and J. Xu, “X-ray Detection Performance of Vertical Schottky Photodiodes Based on a Bulk β-Ga₂O₃ Substrate Grown by an EFG Method”, ECS Journal of Solid State Science and Technology, 8, Q3046-Q3049, 2019.
X. Lu, L. Zhou, L. Chen, X. Ouyang, B. Liu, J. Xu, and H. Tang, “Schottky x-ray detectors based on a bulk β-Ga₂O₃ substrate”, Applied Physics Letters, 112, 103502, Mar 2018.
X. Lu, C. Liu, H. Jiang, X. Zou, and K. M. Lau, “High performance monolithically integrated GaN driving VMOSFET on LED”, Electron Device Letters, IEEE. 38, 6, 752-755, 2017. (Featured in SemiconductorToday)
X. Lu, K. Yu, H. Jiang, A. Zhang, and K. M. Lau, " Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric", Electron Devices, IEEE Transactions on, 64, 3, 2017.
X. Lu, C. Liu, H. Jiang, X. Zou, A. Zhang and K. M. Lau, “Monolithic integration of enhancement-mode Vertical driving transistors on InGaN/GaN light emitting diodes”, Applied Physics Letters, 109, 053504, Aug 2016.
X. Lu, H. Jiang, C. Liu, X. Zou and K. M. Lau, “Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing”, Semiconductor Science and Technology, 31, 055019, 2016.
X. Lu, C. Liu, H. Jiang, X. Zou, A. Zhang and K. M. Lau, “Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on Bulk GaN substrate”, Applied Physics Express, 9, 031001, Jan 2016.
X. Lu, J. Ma, H. Jiang, C. Liu, P. Xu and K. M. Lau, “Fabrication and characterization of gate-last self-aligned AlN/GaN MISHEMTs with in-situ SiN_x gate dielectric”, Electron Devices, IEEE Transactions on. 62, 6, 1862, June 2015.
X. Lu, J. Ma, H. Jiang and K. M. Lau, “Low trap states in in situ SiN_x/AlN/GaN metal-insulator- semiconductor structures grown by metal-organic chemical vapor deposition”, Applied Physics Letters, 105, 102911, Sept 2014.
X. Lu, J. Ma, Z. Liu, H. Jiang, T. Huang, and K. M. Lau, "In-situ SiN_x gate insulator by MOCVD for low- leakage-current ultra-thin-barrier AlN/GaN MISHMETs on Si," Physica Status Solidi A, 211, 4, 775-778, Mar 2014.
X. Lu, J. Ma, H. Jiang, and K. M. Lau, "Characterization of in situ SiN_x thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition," Applied Physics Letters, 104, 032903, Jan 2014.
X. Lu, J. Ma, C. P. Yue, and K. M. Lau, "A GaN-based Lamb-wave oscillator on silicon for high-temperature integrated sensors," Microwave and Wireless Components Letters, IEEE, 99, 6, 318, May 2013.
X. Lu, C. M. Lee, S. Y. Wu, H. P. Ho and K. M. Lau,"GaN-based S₀-wave sensors on silicon for chemical and biological sensing in liquid environments," Sensors Journal, IEEE, 13, 4, 1245, April 2013.
J. Ma*, X. Lu*, X Zhu, T. Huang, H. Jiang, P. Xu “MOVPE growth of in situ SiN_x/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio,” Journal of Crystal Growth, 414, 243, 2015. (co-first author)
H. Jiang, X. Lu, C. Liu, Q. Li and K. M. Lau, "Off-state drain leakage reduction by post metallization annealing for Al₂O₃/GaN/AlGaN/GaN MOSHEMTs on silicon", Physica Status Solidi A, n/a, Dec 2015.
J. Ma, X. Lu, H. Jiang, C. Liu and K. M. Lau, “In situ growth of SiN_x as gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition”, Applied Physics Express, 7, 091002, Aug 2014.
X. Zou, X. Lu, R. Lucas, T. F. Kuech, J. W. Choi, P. Gopalan, and K. M. Lau, “Growth and characterization of horizontal GaN wires on silicon”, Applied Physics Letters, 104, 262101, June 2014.