职称：
副教授?
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个人经历：
香港城市大学????? 电子工程系 ???????????????研究员
香港城市大学 ?????电子工程系 ???????????????博士后研究员
香港城市大学 ?????电子工程系 ???????????????博士
华中科技大学 ?????电子科学与技术系 ?????硕士
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研究方向：
微流控生物传感芯片、三维表面等离激元、太赫兹器件、太赫兹超表面天线、纳米压印技术
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学术活动：
在Lab on a Chip, IEEE Transactions on Antennas and Propagation, Nanoscale, Nanotechnology, IEEE Transactions on Electron Device, Applied Physics Letters, Journal of Semiconductors, Chinese Physics B等学术期刊上发表论文，申请美国专利3项。
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学术著作：
1. S. Y. Zhu, M. A. Eldeeb, and S. W. Pang. “3D Nanoplasmonic Biosensor for Detection of Filopodia in Cells,” Lab on a Chip, 20, pp. 2188-2196, 2020.
2. S. Y. Zhu, Y. L. Li, K. M. Luk, and S. W. Pang, “Compact High-gain Si-imprinted THz Radiating Element for Ultra-high Speed Wireless Communications,” IEEE Transactions on Antennas and Propagation, vol. 68, pp. 5945-5954, 2020.
3. S. Y. Zhu, H. L. Li, M. Yang, and S. W. Pang. “Highly sensitive detection of exosomes by 3D plasmonic photonic crystal biosensor,” Nanoscale. 10, pp. 19927-19936, 2018.
4. S. Y. Zhu, H. L. Li, M. Yang, and S. W. Pang. "Label free detection of live cancer cells and DNA hybridization using 3D multilayered plasmonic biosensor,”?Nanotechnology.?29, pp. 365503-365516, 2018.
5. S. Y. Zhu, H. L. Li, M. Yang, and S. W. Pang. "High sensitivity plasmonic biosensor based on nanoimprinted Quasi 3D nanosquares for cell detection,"?Nanotechnology.?27, pp. 295101-295112, 2016.
6. S. Y. Zhu, J. P. Xu, L. S. Wang, Y. Huang, and W. M. Tang. "Comparison of interfacial and electrical properties between Al₂O₃ and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric,"?Journal of Semiconductors.?36, pp. 034006-034011, 2015.
7. S. Y. Zhu, J. P. Xu, L. S. Wang, and Y. Huang. “Improved Interface Properties of HfO₂ Gate Dielectric GaAs MOS Devices by Using SiNx as Interfacial Passivation Layer,” Chinese Physics B. 22, pp. 097301-097304, 2013.
8. L. S. Wang, L. Liu, J. P. Xu, S. Y. Zhu, Y. Huang, and P. T. Lai “Electrical properties of HfTiON gate-dielectric GaAs metal-oxide-semiconductor capacitor with AlON as interlayer,” IEEE Transactions on Electron Device. 61, pp. 742-746, 2014.
9. L.S. Wang, J.P. Xu, S. Y. Zhu, Y. Huang, and P. T. Lai “Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer,” Applied Physics Letters. 103, pp. 092901-092904, 2013.
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联系邮箱：zhushy27@mail.sysu.edu.cn
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