职称：
副教授
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工作经历：
美国新思科技公司（Synopsys Inc.）高级工程师
长江存储美国硅谷研发中心（YMTI）芯片设计工程师
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学术经历：
美国加州大学圣塔芭芭拉分校 电子与计算机工程系 博士
美国哥伦比亚大学 电子工程系 硕士
华中科技大学 电子科学与技术系 本科
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研究方向：
芯片设计自动化（EDA）核心算法，超大规模集成电路（VLSI）后端可靠性设计，基于人工智能的芯片后端全流程方案
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学术活动：
国际会议评审委员会评委（Technical Program Committee）：
International Symposium on Quality Electronic Design
International Conference on Electronics, Communications and Networks
国际期刊评委：
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IEEE Transactions on Very Large Scale Integration Systems
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
IEEE Embedded Systems Letters
IEEE Transactions on Circuits and Systems I: Regular Papers
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems for Video Technology
ACM Transactions on Design Automation of Electronic Systems
Circuits, Systems, and Signal Processing, Springer
Journal of Computational Electronics, Springer
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学术著作：

Z. Guan, “EM-Aware Memory Mapping Algorithms for SRAM Based FPGA,” IEEE International Symposium on Field-Programmable Custom Computing Machine (FCCM), May 2018.
Z. Guan, M. Marek-Sadowska, “An Efficient and Accurate Algorithm for Computing RC Current Response with Applications to EM Reliability Evaluation,” ACM & IEEE International Conference on Computer Aided Design (ICCAD), Nov. 2016.
Z. Guan, M. Marek-Sadowska, “Incorporating Process Variations into SRAM Electromigration Reliability Assessment Using Atomic Flux Divergence,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, no. 6, 2016, pp. 2195-2207.
Z. Guan, M. Marek-Sadowska, “AFD-based Model of EM Lifetime and Reservoir Effect,” IEEE International Interconnect Technology Conference (IITC), May 2016.
Z. Guan, M. Marek-Sadowska, “AFD-Based Method for Signal Line EM Reliability Evaluation,” IEEE International Symposium on Quality Electronic Design (ISQED), March 2016 (Nominated as Best Paper).
Z. Guan, M. Marek-Sadowska, “Atomic Flux Divergence-Based AC Electromigration Model for Signal Line Reliability Assessment,” IEEE Electronic Components and Technology Conference (ECTC), May 2015.
Z. Guan, M. Marek-Sadowska, S. Nassif and Baozhen Li, "Atomic Flux Divergence Based Current Conversion Scheme for Signal Line Electromigration Reliability Assessment," IEEE International Interconnect Technology Conference (IITC), May 2014.
Z. Guan, M. Marek-Sadowska, S. Nassif, “Statistical Analysis of Process Variation Induced SRAM Electromigration Degradation”, IEEE International Symposium on Quality Electronic Design (ISQED), March 2014.
Z. Guan, M. Marek-Sadowska, S. Nassif, “SRAM Electromigration Bit-line Mechanism and its Prevention Scheme”, IEEE International Symposium on Quality Electronic Design (ISQED), March 2013.
D. Li, Z. Guan, M. Marek-Sadowska and S.R. Nassif, “Multi-Via Electromigration Lifetime Model,” IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), September 2012.
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联系邮箱：guanzh23@mail.sysu.edu.cn