??博士，研究员（长聘副教授）
?联系方式：yezhou@szu.edu.cn
?通讯地址：深圳市南山区南海大道3688号深圳大学办公楼358室, 518060


周晔，研究员（长聘），博士生导师。曾入选广东省特支计划科技创新青年拔尖人才、广东省优粤人才（B类）、深圳市国家级领军人才、深圳市优青、深圳市“孔雀计划”海外高层次人才（B类）、南山区领航人才、深圳大学荔园优青。他兼任SCI期刊STAM (日本国立材料科学研究所)、Applied Nanoscience (Springer Nature)以及IEEE ACCESS（国际电气电子工程师学会）的Associate Editor,曾任Nanoscale Horizons、Frontiers in Chemistry、Polymer International (国际化工协会)、Frontiers in Physics专题主编，目前担任Materials Horizons(英国皇家化学会)青年顾问委员会委员、Chemistry创刊编委、PLOS ONE编委、 Multifunctional Materials(英国物理学会)青年编委。本科毕业于南京大学，博士毕业于香港城市大学，2013年至2014年任职香港城市大学超金刚石与先进薄膜研究中心博士后研究员(Postdoctoral Fellow)，2014年至2015年任职香港城市大学电子工程系资深研究员（Senior Research Fellow），2015年加入深圳大学高等研究院任职研究员,2021年获终身教职。他的研究兴趣包括基于功能材料的信息存储与传感，在Science（2篇）、Chem. Rev.、Nat. Electron.、Nat. Commun.、Matter、Adv. Mater.（11篇）、Appl. Phys. Rev.、Mater. Today、Angew. Chem. Int. Ed.、Nano Lett.、Adv. Funct. Mater.（10篇）、Nano Today、Mater. Horiz.（3篇）、Nano Energy（7篇）、ACS Nano、Small（6篇）等权威期刊发表论文140余篇，其中封面/卷首文章40余篇，被引用4000余次， H-因子35，获授权中国与美国发明专利16项。长期担任Science、Nature、ACS、Wiley、RSC、IOP、IEEE、Elsevier旗下期刊审稿人，被评为科睿唯安2018年顶级审稿专家。


?教育背景
2013年,香港城市大学,物理与材料科学,博士
2009年,香港科技大学,电子工程,硕士
2008年,南京大学,电子信息科学与技术,学士


?工作经历
2015年6月至今，深圳大学高等研究院研究员
2013年8月 至 2015年5月，香港城市大学物理与材料科学系以及电子工程系，历任博士后、研究员、资深研究员
2009年6月 至 2009年8月,香港城市大学物理与材料科学系,助理研究员


?专著
1.Y. Zhou (Editor), Semiconducting Metal Oxide Thin-Film Transistors: Fundamentals and Applications (IOP Publishing, 2020). ISBN: 47
2.Y. Zhou (Editor), Optoelectronic Organic-Inorganic Semiconductor Heterojunctions (CRC Press, 2021). ISBN:28
3. S.-T. Han and Y. Zhou (Editor), Photo-Electroactive Nonvolatile Memories For Data Storage and Neuromorphic Computing (Woodhead Publishing, 2020). ISBN: 72
4.Y. Zhou and H.-H. Chou (Editor), Functional Tactile Sensors: Materials, Devices and Integrations (Woodhead Publishing, 2021). ISBN: 31
5.Y. Zhou and S.-T. Han (Editor), Ambipolar Materials and Devices (RSC Publishing, 2020). ISBN: 85
6.Y. Zhou and Y. Wang (Editor), Perovskite Quantum Dot: Synthesis, Properties and Applications (Springer Singapore, 2020). ISBN: 63
7.Y. Zhou and G. Ding (Editor), Polymer Nanocomposite Materials-Applications in Integrated Electronic Devices (Wiley-VCH, 2021).


?代表性论文 （2018-2021）
27.G. Ding, B. Yang, R.-S. Chen, K. Zhou, S.-T. Han and Y. Zhou,* MXenes for memristive and tactile sensory systems, Appl. Phys. Rev. 2021, 8, 011316.
26. X.-T. Liu, J.-R. Chen, Y. Wang, S.-T. Han* and Y. Zhou,* Building Functional Memories and Logic Circuits with Two-Dimensional Boron Nitride,Adv. Funct. Mater. 2021, 31, **.
25. Y. Zhou and S.-T. Han,* Room-temperature magnetoelastic coupling, Science 2020, 367, 627.
24. L. Guo, S.-T. Han* and Y. Zhou,* Electromechanical Coupling Effects for Data Storage and Synaptic Devices, Nano Energy 2020, 77, 105156.
23. Y. Zhou,* Making allowances for COVID-19, Science 2020, 368, 98.
22. J.-Q. Yang, R. Wang, Y. Ren, J.-Y. Mao, Z.-P. Wang, Y. Zhou* and S.-T. Han,* Neuromorphic Engineering: From Biological to Spike-based Hardware Nervous Systems, Adv. Mater. 2020, 32, **.
21. Z. Lv, Y. Wang, J. Chen, J. Wang, Y. Zhou* and S.-T. Han,* Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems, Chem. Rev. 2020, 120, 3941.
20. Y. Zhou,* The Samsung story, Nat. Electron. 2020, 3, 234.
19. Z.-P. Wang, Y. Wang, J. Yu, J.-Q. Yang, Y. Zhou,* J.-Y. Mao, R. Wang, X. Zhao, W. Zheng and S.-T. Han,* Type-I Core–Shell ZnSe/ZnS Quantum Dot-Based Resistive Switching for Implementing Algorithm, Nano Lett. 2020, 20, 5562.
18. K. Zhou, C. Zhang, Z. Xiong, H.-Y. Chen, T. Li, G. Ding, B. Yang, Q. Liao, Y. Zhou* and S.-T. Han,* Template-Directed Growth of Hierarchical MOF Hybrid Arrays for Tactile Sensor, Adv. Funct. Mater. 2020, 30, **.
17. J. Wang, Z. Lv, X. Xing, X. Li, Y. Wang, M. Chen, G. Pang, F. Qian, Y. Zhou* and S.-T. Han,* Optically Modulated Threshold Switching in Core-Shell Quantum Dot Based Memristive Device, Adv. Funct. Mater. 2020, 30, **.
16. J.-Q. Yang, R. Wang, Z.-P. Wang, Q.-Y. Ma, J.-Y. Mao, Y. Ren, X. Yang, Y. Zhou* and S.-T. Han,* Leaky Integrate-and-Fire Neurons based on Perovskite Memristor for Spiking Neural Networks, Nano Energy 2020, 74, 104828.
15. Y. Ren, X. Yang, L. Zhou, J.-Y. Mao, S.-T. Han* and Y. Zhou,* Recent Advances in Ambipolar Transistors for Functional Applications, Adv. Funct. Mater. 2019, 29, **.
14. C. Zhang, W. B. Ye, K. Zhou, H.-Y. Chen, J.-Q. Yang, G. Ding, X. Chen, Y. Zhou,* L. Zhou, F. Li and S.-T. Han,* Bio-inspired Artificial Sensory Nerve based on Nafion Memristor, Adv. Funct. Mater. 2019, 29, **.
13. G. Ding, Y. Wang, G. Zhang, K. Zhou, K. Zeng, Z. Li, Y. Zhou,* C. Zhang, X. Chen and S.-T. Han,* 2D Metal-Organic Framework Nanosheets with Time-Dependent and Multi-Level Memristive Switching, Adv. Funct. Mater. 2019, 29, **.
12. Z. Lv, M. Chen, F. Qian, V. A. L. Roy,* W. Ye, D. She, Y. Wang, Z.-X. Xu, Y. Zhou* and S.-T. Han,* Mimicking Neuroplasticity in a Hybrid Biopolymer Transistor by Dual Modes Modulation, Adv. Funct. Mater. 2019, 29, **.
11.X. Chen, K. Zeng, X. Zhu, G. Ding, T. Zou, C. Zhang, K. Zhou, Y. Zhou* and S.-T. Han,* Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure, Adv. Sci. 2019, 6, **.
10.L. Zhou, S. Yang, G. Ding,* J.-Q. Yang, Y. Ren, S.-R. Zhang, J.-Y. Mao, Y. Yang, Y. Zhou* and S.-T. Han,* Tunable Synaptic Behavior Realized in C3N Composite based Memristor, Nano Energy 2019, 58, 293.
9.H. Li, X. Jiang, W. Ye, H. Zhang, L. Zhou, F. Zhang, D. She, Y. Zhou* and S.-T. Han,* Fully Photon Modulated Heterostructure for Neuromorphic Computing, Nano Energy 2019, 65, 104000.
8. Z. Lv, Y. Zhou,* S.-T. Han* and V. A. L. Roy,* From biomaterials-based data storage to bio-inspired artificial synapse, Mater. Today 2018, 21, 537.
7. Y. Zhai, X. Yang, F. Wang,* Z. Li, G. Ding, Z. Qiu, Y. Wang, Y. Zhou* and S.-T. Han,* Infrared‐Sensitive Memory Based on Direct‐Grown MoS2–Upconversion‐Nanoparticle Heterostructure, Adv. Mater. 2018, 30, **.
6. Y. Wang, Z. Lv, Q. Liao, H. Shan, J. Chen, Y. Zhou,* L. Zhou, X. Chen, V. A. L. Roy,* Z. Wang, Z. Xu, Y.-J. Zeng and S.-T. Han,* Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching, Adv. Mater. 2018, 30, **.
5. Y. Wang, Z. Lv, J. Chen, Z. Wang, Y. Zhou,* L. Zhou, X. Chen and S.-T. Han*, Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing, Adv. Mater. 2018, 30, **.
4. X. Chen, Y. Zhou,* V. A. L. Roy* and S.-T. Han,* Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories, Adv. Mater. 2018, 30, **.
3. Y. Ren, J.-Q. Yang, L. Zhou, J.-Y. Mao, S.-R. Zhang, Y. Zhou* and S.-T. Han*, Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites, Adv. Funct. Mater. 2018, 28, **.
2. Y. Zhai, J.-Q. Yang, Y. Zhou,* J.-Y. Mao, Y. Ren, V. A. L. Roy* and S. -T. Han*, Toward non-volatile photonic memories: Concept, material and design, Mater. Horiz. 2018, 5, 641.
1. Z. Lv, Y. Wang, Z. Chen, L. Sun, J. Wang, M. Chen, Z. Xu, Q. Liao, L. Zhou, X. Chen, J. Li, K. Zhou, Y. Zhou,* Y.-J. Zeng, S.-T. Han* and V. A. L. Roy,* Photo-Tunable Biomemory based on Light-Mediated Charge Trap, Adv. Sci. 2018, 5, **.