廖武刚 助理教授、特聘副研究员
办公室：致腾楼1017 办公电话： 邮箱：wgliao@szu.edu.cn
廖武刚，博士，硕士生导师，深圳市孔雀计划海外高层次人才。毕业于华中科技大学光学与电子信息学院，获工学博士学位，之后在新加坡国立大学从事博士后研究，于2018年加入深圳大学。主要研究方向为低维电子器件制备及传感器应用。主持国家自然科学基金项目，并作为主要科研骨干完成和参加了新加坡ASTAR项目、国家自然科学基金项目等。近年来，已在IEEE Electron Device Letters, Applied Physics Letters, Advanced Functional Materials, ACS Nano等国际权威学术期刊上发表论文30多篇；并多次在国际会议进行口头和张贴报告；授权国家发明专利5项；获教育部“博士研究生国家奖学金”。担任Nanoscale, Journal of Applied Physics, Applied Physics Letters等期刊的审稿人。
一、主要研究方向
1.二维电子器件及其传感器应用
2.低维器件的低频噪声性能研究
二、近几年主持和参与的科研项目
1.国家自然科学基金项目：基于二维MoS₂/h-BN的双栅柔性离子敏场效应晶体管传感器研究（主持）
2.A^☆STAR项目: 基于二维材料场效应晶体管的传感器研究 （参与）
3.国家自然科学基金项目: 基于能带补偿的纳米硅/晶硅异质结电池的界面修饰与调控 （参与）
三、代表性论文
1.Lin Wang^#, Wugang Liao^#,Swee Liang Wong, Zhi Gen Yu, Sifan Li, Yee-Fun Lim, Xuewei Feng, Wee Chong Tan, Xin Huang, Li Chen, Liang Liu, Jingsheng Chen, Xiao Gong, Chunxiang Zhu, Xinke Liu, Yong-Wei Zhang, Dongzhi Chi, and Kah-Wee Ang,Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application.Advanced Functional Materials,2019,**. (Co-first author)
2.Lin Wang^#, Wugang Liao^#,Shengqiang Xu, Xiao Gong,ChunxiangZhuandKah-Wee Ang,Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO.IEEE Electron Device Letters,2019,40(3), 471-474. (Co-first author)
3.Wugang Liao^*,Yanting Huang, HuideWang andHan Zhang, Van der Waals heterostructures for optoelectronics: Progress and prospects.Applied Materials Today, 2019, 16: 435-455.
4.Wugang Liao,Wei Wei, Yu Tong, Wai Kin Chim, and Chunxiang Zhu,Low-Frequency Noise in Layered ReS₂Field Effect Transistors on HfO₂and Its Application for pH Sensing.ACS Applied Materials & Interfaces, 2018, 10(8): 7248-7255.
5.Wugang Liao,LinWang,LiChen,WeiWei,ZheZeng,XueweiFeng,Li Huang, Wee Chong Tan, Xin Huang, Kah-Wee AngandChunxiangZhu,Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits.Nanoscale, 2018,10(36), 17007-17014.
6.Wugang Liao,Wei Wei, Yu Tong, Wai Kin Chim, and Chunxiang Zhu, Electrical performance and low frequency noise in hexagonal boron nitride encapsulated MoSe₂dual-gated field effect transistors.Applied Physics Letters, 2017, 111: 082105.
7.Wugang Liao,Wei Wei, Yu Tong, Andrew Wong, Wai Kin Chim, and Chunxiang Zhu, pH Sensing and low-frequency noise characteristics of low temperature (400 °C) p-Channel SOI Schottky ISFETs.IEEE Electron Device Letters, 2017, 38: 1146-1149.