王江涌[教授]物理系管理个人简历
性别：男
出生日期：
职务：物理系工作小组组长
学术兼职：
社会兼职：
电话：82902225
手机：+86-15017214200
传真：+86-754-82902767
E-mail：wangjy@stu.edu.cn


学历简介：
学士1984武汉大学物理系理论物理专业
硕士1989四川大学原子与分子物理研究所原子与分子物理专业
博士1997南非UniversityoftheFreeState物理系表面物理专业



工作经历：
1984年7月至1986年8月武汉科技大学物理系助教
1989年7月至1994年2月武汉科技大学物理系讲师
1998年1月至1998年9月南非UniversityoftheFreeState物理系博士后(ResearchAssociate)
1998年10月至2001年2月美国KansasStateUniversity物理系博士后(ResearchAssociate)
2001年3月至2009年4月德国MaxPlanckInstituteforMetalsResearch研究员(StaffScientist)
2009年5月至现在汕头大学物理系教授



担任课程：本科生:数理方法，理论力学，表面与界面的偏析
研究生:材料物理研究方法,材料物理


主要研究兴趣：薄膜中的相变及表征


研究成果：
[1]JYWang*,FHWangandQQGao；Exchange-correlationenergyoftheBegroundstate；ChineseJournalofAtomicandMolecularPhysics,3(1992)2393；
[2]JHXi,LJWu,BWLi*andJYWang；HyperfineinteractionoftheScgroundstate；PhysicsLettersA,152(1991)401；
[3]JHXi,LJWu,BWLi*andJYWang；HyperfineinteractioninScatomicstructure；ChineseJournalofAtomicandMolecularPhysics,S1(1990)52；
[4]JYWang*,JHXi,LJWuandBWLi；Exchange-correlationenergiesofberylliumanditsisoelectronicsequence；ChineseJournalofAtomicandMolecularPhysics,S1(1990)71；
[5]BMLaw*,AMukhopadhyay,JRHendersonandJYWang；Wettingofsiliconwafersbyn-alkanes；Langmuir,19(2003)8380；
[6]JYWang,MCrawleyandBMLaw*；Contactanglehysteresisnearafirst-orderwettingtransition；Langmuir,17(2001)299；
[7]JYWang,SBeteluandBMLaw*；Linetensionapproachingthewettingtransition:experimentalresultsfromcontactanglemeasurement；PhysicalReviewE.63(2001)031601；
[8]JYWang,SBeteluandBMLaw*；Linetensioneffectsnearfirst-orderwettingtransitions；PhysicalReviewLetters,83(1999)3677；
[9]JYWang*,DHe,AZalarandEJMittemeijer；InterdiffusioninmicrostructurallydifferentSi/Almultilayeredstructures；SurfaceandInterfaceAnalysis,38(2006)773；
[10]JYWang*；Equilibriumandkineticsurfacesegregationinbinaryalloythinfilms；AppliedSurfaceScience,252(2006)5347；
[11]JYWang,JduPlessis*,JJTerblansandGNvanWyk；Theequilibriumsurfacesegregationofsilvertothelowindexsurfacesofacoppersinglecrystal；Surface&InterfaceAnalysis28(1999)73；
[12]JYWang,JduPlessis*,JJTerblansandGNvanWyk；KineticsnearthediscontinuoussurfacetransitionintheCu(111)(Ag)binarysegregatingsystem；SurfaceScience,423(1999)12；
[13]JYWang,JduPlessis*,JJTerblansandGNvanWyk；TheDiscontinuoussurfacetransitionintheCu(111)(Ag)binarysegregatingsystem；SurfaceScience,419(1999)197.(1.855)；
[14]ECViljoen,JYWang,WJErasmus,JJTerblansandJduPlessis*；OrderedmonolayeroverstructuresformedonCusurfacesthroughsegregation；MaterialsScienceForum,294(1999)457；
[15]S.HofmannandJYWang*andAZalar；BackscatteringeffectinquantitativeAESsputterdepthprofilingofmultilayers；SurfaceandInterfaceAnalysis,39(2007)787；
[16]S.Hofmann*andJYWang；ImplementingtheelectronbackscatteringfactorinquantitativesputterdepthprofilingusingAES；SurfaceandInterfaceAnalysis,39(2007)324；
[17]S.Hofmann*andJYWang；AESdepthprofilingwithatitledsampleinfrontofacylindricalmirroranalyzer:quantificationandprofileshapechangesaccordingtoanextensionoftheconventionalMRImodel；SurfaceandInterfaceAnalysis,39(2007)45；
[18]S.Hofmann*andJYWang；TheMRI-Modelinsputterdepthprofiling:capabilities,limitationsandrecentprogress；JournalofSurfaceAnalysis,13(2006)142；
[19]JYWang*,AZalar,andEJMittemeijer；DepthdependencesoftheionbombardmentinducedroughnessandoftheinterdiffusioncoefficientforSi/Almultilayers；AppliedSurfaceScience,222(2004)171；
[20]JYWang*andEJMittemeijer；Anewmethodforthedeterminationofthediffusion-inducedconcentrationprofileandtheinterdiffusioncoefficientforthinsolidfilmsystemsbyAugerelectronspectroscopicalsputterdepthprofiling；JournalofMaterialsResearch,19(2004)681；
[21]JYWang*,S.Hofmann,AZalarandEJMittemeijer；QuantitativeevaluationofsputteringinducedsurfaceroughnessindepthprofilingofpolycrystallinemultilayersusingAugerelectronspectroscopy；ThinSolidFilms,444(2003)120；
[22]JYWang*,AZalar,YHZhaoandEJMittemeijer；DeterminationoftheinterdiffusioncoefficientforSi/AlmultilayersbyAugerelectronspectroscopicalsputterdepthprofiling；ThinSolidFilms,433(2003)92；
[23]S.Hofmann*andJYWang；ProgressinquantitativesputterdepthprofilingusingtheMRI-model；JournalofSurfaceAnalysis,10(2003)52；
[24]TWagner*,JYWang,andSHofmann；SputterDepthProfilinginAESandXPS,Chapter22,inSurfaceAnalysisbyAugerandX-rayPhotoelectron；Ed:D.BriggsandJ.Grant,IMPublications,WestSussex,UKandSurfaceSpectraLimited,Manchester,UK,2003,p.619；
[25]S.Hofmann*andJYWang；Determinationofthedepthscaleinsputterdepthprofiling；JournalofSurfaceAnalysis,9(2002)336；
[26]ZMWang,LPHJeurgens,JYWangandEJMittemeijer*；Advancesinunderstandingmetaled-inducedcrystallizationofamorphoussemiconductors；AdvancedEngineeringMaterials,11(2009)131；
[27]ZMWang*,LPHJeurgens,JYWang,F.PhillippandEJMittemeijer；High-resolutiontransmission-electron-microscopystudyofultrathinAl-inducedcrystallizationofamorphousSi；JournalofMaterialsResearch,24(2009)3294；
[28]JYWang*,ZMWang,LPHJeurgensandEJMittemeijer；Mechanismsofaluminum-inducedcrystallizationandlayerexchangeuponlow-temperatureannealingofamorphousSi/polycrystallineAlbilayers；JournalofNanoScienceandNanoTechnology,9(2009)3364；
[29]JYWang*,UStarkeandEJMittemeijer；EvaluationofthedepthresolutionsofAES,XPS,TOF-SIMSsputterdepthprofilingtechniques；ThinSolidFilms,517(2009)3402；
[30]ZMWang,JYWang*,LPHJeurgensandEJMittemeijer；Originsofstressdevelopmentduringmetal-inducedcrystallizationandlayerexchange:AnnealingamorphousGe/crystallineAlbilayers；ActaMaterialia,56(2008)5047；
[31]DHe,JYWang*andEJMittemeijer；Crystallitesizeandmicro-andmacro-strainchangesduringlayerexchangeuponannealingamorphoussilicon/crystallinealuminum；ZeitschriftfürKristallographie,27(2008)193；
[32]ZMWang,JYWang*,LPHJeurgensandEJMittemeijer；Thermodynamicsandmechanismofmetal-inducedcrystallizationinimmisciblealloysystems；PhysicalReviewB,77(2008)045424；
[33]ZMWang,JYWang*,LPHJeurgensandEJMittemeijer；TailoringtheultrathinAl-inducedcrystallizationtemperatureofamorphousSibyinterfacethermodynamics；PhysicalReviewLetters,100(2008)125503；
[34]JYWang*,ZMWangandEJMittemeijer；Mechanismofaluminium-inducedlayerexchangeuponlow-temperatureannealingofamorphousSi/polycrystallineAlbilayers；JournalofAppliedPhysics,102(2007)113523；
[35]ZMWang,JYWang*,LPHJeurgensandEJMittemeijer；Investigationofmetal-inducedcrystallizationinamorphousGe/crystallineAlbilayersbyAugermicroanalysisandselected-areadepthprofiling；SurfaceandInterfaceAnalysis,40(2008)427；
[36]ZMWang,JYWang*,LPHJeurgensandEJMittemeijer；“Explosive”crystallizationofamorphousgermaniuminGe/Allayersystems;comparisonwithSi/Allayersystems；ScriptaMaterialia,55(2006)987；
[37]JYWang*,DHe,YHZhaoandEJMittemeijer；Originofaluminium-inducedcrystallizationofamorphoussilicon；AppliedPhysicsLetters,88(2006)061910；
[38]DHe,JYWang*andEJMittemeijer；Originsofinterdiffusion,crystallizationandlayerexchangeincrystallineAl/amorphousSilayersystems；AppliedSurfaceScience,252(2006)5470；
[39]DHe,JYWang*andEJMittemeijer；Thermodynamicandkineticcriteriaforlayerexchangeinamorphoussilicon/crystallinealuminiumbilayersduringannealing；ScriptaMaterialia,54(2006)559；
[40]DHe,JYWang*andEJMittemeijer；TheinitialstageofthereactionbetweenamorphousSiandcrystallineAl；JournalofAppliedPhysics,97(2005)093524；
[41]DHe,JYWang*andEJMittemeijer；ReactionbetweenamorphousSiandcrystallineAlinAl/SiandSi/Albilayers:microstructuralandthermodynamicanalysisoflayerexchange；AppliedPhysicsA,80(2005)501；
[42]YHZhao,JYWang*andEJMittemeijer；InitialinteractionofcrystallineAl/amorphousSibilayerduringannealing；MRSProceedings,808(2004)A4.23；
[43]YHZhao,JYWang*andEJMittemeijer；MicrostructuralchangesinamorphousSi/crystallineAlthinbilayerfilmsuponannealing；AppliedPhysicsA,79(2004)681；
[44]AZalar*,JYWang,YHZhao,EJMittemeijerandP.Panjan；AESdepthprofilingofthermallytreatedAl/Sithin-filmstructures；Vacuum,71(2003)11；
[45]YHZhao,JYWang*andEJMittemeijer；InteractionofamorphousSiandcrystallineAlthinfilmsduringlow-temperatureannealinginvacuum；ThinSolidFilms,433(2003)82；