李述体 研究员


李述体，广东省光电功能材料与器件工程技术研究中心主任，广东省教育厅光电功能材料与器件重点实验室主任，广东省普通高校“千百十工程”省级培养对象，物理学研究员，博士生导师。长期从事氮化物半导体材料与器件制备工作，在氮化物半导体低维材料的生长及其器件应用方面进行了较深入的研究。以第一作者或通讯作者身份在AdvancedMaterials,ACSNano,Nano Energy，Nanoscale，Chem.Commun.，Appl.Phys.Lett.,OpticsExpress，IEEEPhoto.Tech.Lett.等期刊上发表氮化物材料及器件相关论文50余篇，获得多项发明专利。承担过包括国家863计划项目在内的多项半导体材料与器件国家省部级相关课题。2012年“GaN基及AlGaInP基LED的研制”获广东省科学技术二等奖。


联系方式：lishuti@scnu.edu.cn






南昌大学材料物理与化学专业 博士毕业
2002.7
华南师范大学从事光电子材料与器件的研究工作以及
《光电器件物理与设计》、《光电子学》的教学工作

2002--至今





1）
国家自然科学基金：高可控GaN基纳米线及其异质核壳结构的生长与性能研究，主持人；

2）
广东省工艺研究与能力建设专项资金重点项目：氮化物纳米高电子迁移率晶体管芯片研制，主持人；

3）
广东省科技平台建设项目：广东省光电功能材料与器件工程技术研究中心建设，主持人；

4）
国家自然科学面上基金：Si衬底半极性和非极性GaN基材料生长及LED研制，主持人；

5）
国家自然科学青年基金：磷化镓为p型层的高亮度GaN基LED外延片设计与生长，主持人；

6）
广东省战略新兴产业LED专项资金项目：基于硅集成的照明用倒装焊大功率LED芯片、高压芯片和芯片级模组核心技术攻关及其系列产品的产业化，主持人；

7）
广东省科技攻关重点项目：超高亮度氮化镓蓝光LED外延片研制，主持人；

8）
广东科技攻关项目：Si衬底InGaN薄膜太阳能电池研制，主持人；

9）
广东省教育部产学研结合项目：图形衬底GaN基LED外延片及芯片关键技术，主持人；

10）
广东省自然科学青年基金：磷化镓为p型层的高亮度GaN基LED外延片设计与生长，主持人；

11) 广州市科技攻关重大项目：高光效大功率LED图形衬底外延生长和芯片技术开发及产业化，主持人；



12) 广州市科技攻关重点项目：功率型高亮度蓝光LED外延片及芯片研制，主持人。






[1]Song, Weidong，Wang, Xingfu，Xia, Chao，Wang, Rupeng，Zhao, Liangliang，Guo, Dexiao，Chen, Hang，Xiao, Jiakai，Su, Shichen，Li, Shuti*, Improved photoresponse of a-axis GaN microwire/p-polymer hybrid photosensor by the piezo-phototronic effect，Nano Energy，2017，33：272.
[2]Wang, Xingfu，Yu, Ruomeng，Jiang, Chunyan，Hu, Weiguo，Wu，Wenzhuo，Ding, Yong，Peng, Wenbo，Wang Zhong Lin，Li, Shuti*， Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire，Advanced Materials，2016，28：7234.
[3]Zhang ChongZhen，He Miao，Song Wei-Dong，Hu Wenxiao，Qin Ping，Zhao Liangliang，Wang RuPeng，Yuan Song-Yang， Li, Shuti*，Thermal flow air post-treatment under high relative humidity for efficient and reproducible planar CH3NH3PbI3-xClx based perovskite solar cells，Optical and Quantum Electronics，2016，48: 449.
[4]Hu Wenxiao，Qin Ping，Song Weidong，Zhang Chongzhen，Wang Rupeng，Zhao Liangliang，Xia Chao，Yuan Songyang，Yin Yian， Li Shuti*，Ultraviolet light-emitting diodes with polarization-doped p-type layer，Superlattices and Microstructures， 2016，97：353.
[5]Yu Ruomeng，Wang Xingfu，Peng Wenbo，Wu Wenzhuo，Ding Yong，Wang, Zhong Lin, Li Shuti*，Piezotronic Effect in Strain-Gated Transistor of a-Axis GaN Nanobelt，ACS Nano，2015，9：9822.
[6] Xingfu Wang, Jinhui Tong, Xin Chen, Bijun Zhao, Zhiwei Ren, Danwei Li, Xiangjing Zhuo, Jun Zhang, Hanxiang Yi, Chao Liu, Fang Fang, Shuti Li*, Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties, Chem. Commun. 50: 682, 2014.
[7] Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, and Shuti Li*, Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer, IEEE Photonics Technology Letters, 26: 134, 2014
[8] Zhiwei Ren, Shuti Li*, Chao Liu, Xin Chen, Bijun Zhao, Xinfu Wang, Enhanced performance of InGaN/GaN based solar cells with an In0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well, Optics Express, 21: 7118, 2013.
[9] Tong Jinhui, Zhao Bijun, Wang Xingfu, Chen Xin, Li Danwei, Zhuo Xiangjing, Zhang Jun, Li Shuti*, Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers, Chin. Phys. B, 22:068505, 2013.
[10] Chen Xin, Zhao Bijun, Tong Jinhui, Li Danwei, Zhuo Xiangjing, Li Shuti*, Advantages of InGaN/GaN multiple quantum well solar cells with stepped thickness quantum wells, Chin. Phys. B, 22:078402, 2013.
[11] Taiping Lu, Shuti Li*, Chao Liu, Kang Zhang, Yiqing Xu, Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer, Appl. Phys. Lett., 100, 141106-141108, 2012.
[12] Chao Liu, Taiping Lu, Lejuan Wu, Hailong Wang, and Shuti Li*, Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer, IEEE Photonics Technoligy Letters, 24, 1239-1241, 2012
[13] Wu Le-Juan, Li Shu-Ti*, Liu Chao, Wang Hai-Long, Lu Tai-Ping, Zhang Kang, Simulation study of blue InGaN multiple quantum well light-emitting diodes with di?erent hole injection layers, Chin. Phys. B, 21, 068506 , 2012.
[14] Tong Jin-Hui, Li Shu-Ti*, Lu Tai-Ping, Liu Chao, Wang Hai-Long, Wu Le-Juan, E?ciency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers, Chin. Phys. B, 21, 118502, 2012
[15] Taiping Lu, Shuti Li*, et al. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes, Optics Express, 19:18319, 2011.
[16] Shuti Li, Chao Liu, Yian Yin, Tianming Zhou, et al. Study of GaP single crystal layers grown on GaN by MOCVD, Materials Research Bulletin,, 46: 1942, 2011.
[17] Lu Tai-Ping, Li Shu-Ti*, Blue InGaN light-emitting diodes with dip-shaped quantum wells, Chinese Physics B, 20:108504, 2011.
[18] Lu Tai-Ping, Li Shu-Ti*, The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer, Chinese Physics B, 9:098503, 2011.
[19] Jianxing Cao, Shuti Li*, GuanghanFan, Chen Xin, et al. The influence of the Al pre-deposition on the properties of AlN and GaN layer grown on Si (111) substrate, J. Crystal growth, 312: 2044, 2010.
[20] Shuti Li, Jun Su, Guanghan Fan，Tianming Zhou, et al. GaP:Mg layers grown on GaN by MOCVD, J. Crystal growth, 312: 3101, 2010.
[21] Li Shu-Ti, Cao Jian-Xing, Fan Guang-Han, et al. GaP layers grown on GaN with and without buffer layer, Chin. Phys. B, 19:107206, 2010.
[22]Song, Weidong，Wang, Xingfu，Xia, Chao，Wang, Rupeng，Zhao, Liangliang，Guo, Dexiao，Chen, Hang，Xiao, Jiakai，Su, Shichen，Shuti Li*,Improved photoresponse of a-axis GaN microwire/p-polymer hybrid photosensor bythe piezo-phototronic effect，Nano Energy，2017，33：272.
[23]Wang, Xingfu，Yu, Ruomeng，Jiang, Chunyan，Hu, Weiguo，Wu，Wenzhuo，Ding, Yong，Peng, Wenbo，Wang Zhong Lin，Shuti Li*，Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN HeterostructureMicrowire，Advanced Materials，2016，28：7234.
[24]Zhang ChongZhen，He Miao，Song Wei-Dong，Hu Wenxiao，Qin Ping，Zhao Liangliang，Wang RuPeng，Yuan Song-Yang，Shuti Li*，Thermal flow air post-treatment under high relative humidity for efficient and reproducible planar CH3NH3PbI3-xClx based perovskite solarcells，Optical and Quantum Electronics，2016，48: 449.
[25]Hu Wenxiao，Qin Ping，Song Weidong，Zhang Chongzhen，Wang Rupeng，Zhao Liangliang，Xia Chao，Yuan Songyang，Yin Yian， Shuti Li*，Ultraviolet light-emitting diodes with polarization-doped p-typelayer，Superlattices and Microstructures， 2016，97：353.
[26]Yu Ruomeng，Wang Xingfu，Peng Wenbo，Wu Wenzhuo，Ding Yong，Wang, Zhong Lin, Shuti Li*，Piezotronic Effect in Strain-Gated Transistor of a-Axis GaN Nanobelt，ACS Nano，2015，9：9822.