Cai LiuResearch Assistant Professor
email: liuc9@sustech.edu.cn
Office：
Research Field：Epitaxy (MOVPE, MBE), photovoltaics



Essential Information
Name： Cai LIU
Position: Research Assistant Professor
HighestDegree：Ph. D.
Telephone（personal）：**
Office：
Email：liuc9@sustech.edu.cn
ResearchField：Epitaxy(MOVPE, MBE), photovoltaics

Educational Background
2010/04-2014/11Ph. D. in Advanced Interdisciplinary Science, Research Center for AdvancedScience and Technology, The University of Tokyo, Japan.
2010/10-2011/03Oversea research student, Research Center for Advanced Science and Technology,The University of Tokyo, Japan.
2009/10-2010/08Japanese training, Preparatory School for Oversea Study in Japan, Northeast NormalUniversity, China.
2006/09-2009/06Master in Materials Physics and Chemistry, College ofMaterials Science and Engineering, Sichuan University, China.
2002/09-2006/06Bachelor in Materials Physics, College of Materials Science and Engineering,Sichuan University, China.

Working Experience
2018/08-present Research Assistant Professor, Institute forQuantum Science and Engineering, Southern University of Science and Technology,China.
2018/05-2018/07 Research Associate Professor, College ofMaterials Science and Engineering, Sichuan University, China.
2017/04-2018/04 Research Assistant Professor, College ofMaterials Science and Engineering, Sichuan University, China.
2015/01-2017/01 Postdoc, College of Materials Science andEngineering, Sichuan University, China.

Honors and Awards
2010-2014Doctoral Program Scholarship from Ministry of Education, Culture, Sports,Science and Technology, Japan.
2017.08 BestPaper Award of the 17^th China Photovoltaics Conference.

Papers and Patents
[1]Peng Tang, Cai Liu?,Jingquan Zhang, Lili Wu, Wei Li, Lianghuan Feng, Guanggen Zeng, Wenwu Wang，Surfacemodification effects of fluorine-doped tin dioxide by oxygen plasma ionimplantation, Applied Surface Science, Vol. 436, 1st, April, 2018, 134-140.
[2]Nan Tang, Qimin Hu, Aobo Ren, Wei Li*, CaiLiu*, Jingquan Zhang, Lili Wu, Bing Li, Guanggen Zeng, Songbai Hu, Anapproach to ZnTe:O intermediate-band photovoltaic materials, SolarEnergy, Vol. 157, 15 November 2017, 707-712.
[3] Cai Liu^#*, AkihitoKumamoto, Michihiro Suzuki, Hongbo Wang, Hassanet Sodabanlu, Masakazu Sugiyama,Yoshiaki Nakano, Effects of Hydrogen Etching on Stress Control in AlNInterlayer Inserted GaN MOVPE on Si, Semiconductor Science and Technology 32 ( 2017 ) 075003.
[4]Dong Liu^#, Cai Liu,* LiliWu, Wei Li, Fang Chen, Bangqing Xiao, Jingquan Zhang* and Lianghuan Feng,Highly Reproducible Perovskite Solar Cells with Excellent CH₃NH₃PbI_3–xCl_x Films Morphology Fabricated via High Precursor Concentration, RSCAdvances, 2016, 6, 51279 – 51285.
[5]Ya Yang^#, Taowen Wang, CaiLiu*, Wei Li *, Jingquan Zhang, Lili Wu, Guanggen Zeng, Wenwu Wang, MingzheYu, Single-phase control of CuTe thin films for CdTe solar cells, Vacuum,142 (2017), 181-185.
[6] Cai Liu^#, Hassanet Sodabanlu,Masakazu Sugiyama, Yoshiaki Nakano, In-situGrowth Condition Analysis of AlN Interlayers for Wafer Curvature Control in GaNMOVPE on Si (111), PhysicaStatus Solidi C 11, 2014，No. 03-04, 598-603.
[7] Cai Liu^#, Hassanet Sodabanlu,Masakazu Sugiyama, Yoshiaki Nakano, ThicknessOptimization of GaN Layers by In-situ Observation of GaN MOVPE on Si (111), Physica Status Solidi C 10, 2013，No. 11, 1541–1544.
[8] Cai Liu^#, Hongbo Wang, HassanetSodabanlu, Masakazu Sugiyama, Yoshiaki Nakano, Voids Formation during MOVPE of GaN on Si (111) Employing LowTemperature AlN Interlayers, PhysicaStatus Solidi C 11, 2013，No.02, 293-296.
[9]Li Bing^*, Cai Liu, FengLiang-Huan, Zhang Jing-Quan, Zheng Jia-Gui, Cai Ya-Ping, Cai Wei, Wu Li-Li, LiWei, etc, Deep level transient spectroscopy and photoluminescence studies ofCdS/CdTe thin film solar cells, Acta Physica Sinica, 2009, 58(3):1987-1991.
[10]Yanan Jiang, Dingqin Hu, Peng Tang, Jingquan Zhang, Cai Liu, Wenwu Wang, Wei Li, Lili Wu, Guanggen Zeng, LianghuanFeng, A study of apparent quantum efficiency in different structures of cadmiumtelluride solar cells, Solar Energy, June 2017, 149:323-331.
[11]Ping Tang^#, Bing Li*, Lianghuan Feng, Lili Wu, Jingquan Zhang, WeiLi, Guanggen Zeng, Wenwu Wang, Cai Liu,Structural, electrical and optical properties of AlSb thin films deposited bypulsed laser deposition, Journal of Alloys and Compounds,Volume 692, 25 January 2017, 22–25.
[12]Ke Yang^#, Bing Li*, Jingquan Zhang, Wei Li, Lili Wu, Guanggen Zeng,Wenwu Wang, Cai Liu, Lianghuan Feng,Structural, optical and electrical properties of AlSb thin films deposited bypulsed laser deposition using aluminum-antimony alloying target, Superlatticesand Microstructures, Vol. 102, February 2017, 1–6.
[13] Dong Liu^#, Shengqiang Ren^#,Xiao Ma, Cai Liu, Lili Wu^*,Wei Li, Jingquan Zhang^* and Lianghuan Feng, Cd₂SnO₄ transparent conductive oxide: a promising alternative candidate for highlyefficient hybrid halide perovskite solar cells, RSC Advances, 2017, 7,8295-8302.
Undertaking project
1．2018/01-2020/12National Natural Science Foundation of China (Young Scientists Program), **,Chemical Solution Epitaxy Study on Intermediate Band Organic Metal HalidePerovskite Single Crystalline Thin Film, RMB250,000, Principal Investigator.
2.2017/01-2018/12 Sichuan Province Science and Technology Program High Technologyand Industrialization General Project, 2017GZ0414，Systematical Stress and Vertical CarrierTransportation Research on II-VI/Si Virtual Substrate, RMB200,000, PrincipalInvestigator.
3.2016/06-2018/06 National Energy Novel Materials Center Open Program, NENMC-II-1702，Research onII-VI/Si Composite Substrate for Opto-electronical Application, RMB280,000, PrincipalInvestigator.
4.2016/01-2016/12 The 59^th China Postdoctoral Science FoundationGeneral Project, 2016M592670, Study on Oxygen State in ZnTe:O Intermediate-bandMaterial, RMB50,000, Principal Investigator.
5.2015/04-2018/04 National High Technology Research and Development Program of China,2015AA050610, Research on Novel High Efficiency Cadmium Telluride Thin FilmSolar Cells, RMB3,500,000, Key Investigator.
6.2011/01-2015/08 Major State Basic Research Development Program of China, 2011CBA00708,Basic Research on High Efficiency Compound Semiconductor Thin Film Solar Cells,RMB6,860,000, Key Investigator.
7.2012/06-2014/09 Collaborative Research Program with NuFlare Technology Inc.,MOVPE of GaN-on-Si for the Application to 8-inch Virtual Substrate,JPY~30,000,000, Top-2 Investigator.
8.2003/01-2005/12 National High Technology Research and Development Program ofChina, 2003AA513010, Manufacture Technology and Pilot Production Line ofCadmium Telluride Thin Film Solar Cells, RMB13,990,000, Student Investigator.
9.2006/01-2008/12, National Natural Science Foundation of China, **,Research on Single Band Offset II-VI Superlattice Thin Film Preparation andProperty, RMB250,000, Student Investigator.