Bin Li Research Assistant Professor
email: lib3@sustech.edu.cn
Office：Room 121, Wisdom Valley 3
Research Field：Topological matters, 2D materials, Magnetic materials, etc.



Essential Information
Name： Bin Li
Position： Research Assistant Professor
Highest Degree：PhD
Telephone（office）：**
Office：3-121,Huiyuan
Email：lib3@sustech.edu.cn
Research Field：Topologicalmatters, 2D materials, Magnetic materials, etc.

Educational Background
2003.09-2007.06 Bachelor’s Degree,Material Science and Engineering, Hebei University of Technology
2012.09-2017.11 Doctor of Philosophy(Ph.D.), Experimental Condensed Matter Physics, The University of Hong Kong

Working Experience
2007.09-2012.06 Suzhou Institute ofNano-Tech and Nano-Bionics, Chinese Academy of
Sciences , Junior Researcher
2016.12-2017.01 Southern University ofScience and Technology, Visiting Scholar
2017.05-2017.10 Southern University ofScience and Technology, Visiting Scholar
2017.11-2019.04 Southern University ofScience and Technology, Senior Scientist
2019.05-now Southern University of Scienceand Technology, Research Assistant Professor

Papers and Patents

[1] Yipu Xia, BoWang, Junqiu Zhang, Yue Feng, Bin Li, Xibiao Ren, Hao Tian, Jinpeng Xu,Wingkin Ho, Hu Xu, Chang Liu, Chuanhong Jin and Maohai Xie*, Hole doping inepitaxial MoSe2 monolayer by nitrogen plasma treatment, 2D Materials, 5(4):041005, (2018).
[2] B. Li, W.G. Chen, X. Guo, W. K.Ho, X.Q. Dai, J.F. Jia, M. H. Xie*, Strain in Epitaxial High-
Index Bi2Se3(221) Films Grown byMolecular-Beam Epitaxy, Applied Surface Science 396, 1825-1830
(2017).
[3] B. Li, Y. P. Xia, W. K. Ho, M.H. Xie*, Suspended Ga2Se3 Film and Epitaxial High-index
Bi2Se3 on GaSb(001) by Molecular-BeamEpitaxy, Journal of Crystal Growth 459, 76-80 (2017).
[4] B. Li, Q. S. Lu, S. G. Xu, Y.P. Xia, W. K. Ho, N. Wang, C. Liu*, M. H. Xie*, Induced robust
topological order on an ordinary insulatorhetero-structured with a strong topological insulator,
arXiv:1611.04688 [cond-mat.mtrl-sci].
[5] P. Shang, X. Guo, B. Zhao, X. Dai*, B.Li, J. Jia, Q. Li*, M. Xie*, Nanoclusters of CaSe in
calcium-doped Bi2Se3 grown bymolecular-beam epitaxy, Nanotechnology 27, 085601 (2016).
[6] B. Li, X. Guo, W. K. Ho, M. H.Xie*, Strain in epitaxial Bi2Se3 grown on GaN and graphene
substrates: A reflection high-energyelectron diffraction study, Applied Physics Letters 107, 081604
(2015).
[7] W. He, S. L. Lu, J. R. Dong*, Y. M.Zhao, X. Y. Ren, K. L. Xiong, B. Li, H. Yang, H. M. Zhu,
X. Y. Chen, X. Kong, Structural andoptical properties of GaInP grown on germanium by metalorganic
chemical vapor deposition, Applied PhysicsLetters 97, 121909 (2010).