张洪良 教授、博士生导师
Email: kelvinzhang@xmu.edu.cn
实验室：化学楼589
课题组网页：https://khlzhang.xmu.edu.cn

个人简历教育背景：
博士（英国牛津大学，2012）
硕士（新加坡国立大学，2008）
学士（山东大学，2003）
工作经历：
2017-至今 厦门大学教授
2015- 2016 英国剑桥大学材料系Herchel Smith Fellow
2012-2014 美国西北太平洋国家实验室博士后
研究方向固体电子结构与光电磁性能；宽禁带氧化物半导体及光电子器件；光电催化；光电子能谱技术。
课题组聚焦于无机化学、材料物理、电子学等交叉学科的前沿研究，致力于开发绿色新型的无机功能材料与器件。研究内容包括金属氧化物半导体薄膜的制备、表界面调控及其光、电、磁、催化等物化性质表征；并进一步探究这些材料在光电子器件、光电催化水分解等领域的应用，从原子层面深入揭示材料结构与性能的内在联系。
近期主要代表论著:1.“Octahedral proximity effect created room temperature ferromagnetic insulating phase in ultrathin manganite films”;
i Weiwei; Zhu Bonan; He Qian; Borisevich Albina Y.; Yun Chao; Wu Rui; Lu Ping; Qi Zhimin; Wang Qiang; Chen Aiping; Wang Haiyan; Cavill Stuart A.;Zhang Kelvin H. L.*; MacManus-Driscoll Judith L.*, Advanced Science, 2020, 7: **.
2.Recent progress on the electronic structure, defect and doping properties of Ga2O3;
Zhang Jiaye; Shi Jueli; Qi Dong-Chen; Chen Lang*; Zhang Kelvin H. L.*; APL Materials, 2020, 8, 020906 (Featured Article, Journal cover).
3.Band edge evolution of transparent ZnM2IIIO4 (MIII = Co, Rh, Ir) spinels;
Wahila Matthew J.; Lebens-Higgins Zachary W.; Jackson Adam J.; Scanlon David O.; Lee Tien-Lin; Zhang Jiaye; Zhang Kelvin H. L.*; Piper Louis F. J.*; Physical Review B, 2019, 100, 085126.
4.Electronic structure and p-type conduction mechanism of spinel cobaltite oxide thin films;
Huang Xiaochun; Zhang Jia-Ye; Wu Meng; Zhang Sa; Xiao Haiyan; Han Wenqiao; Lee Tien-Lin; Tadich Anton; Qi Dong-Chen; Qiao Liang; Chen Lang*; Zhang Kelvin H. L.*; Physical Review B, 2019, 100 115301.
5.Ni3+ Induced Hole States Enhance the Oxygen Evolution Reaction Activity of NixCo3-xO4 Electrocatalysts;
M. Y. Cui; X. Y. Ding; X. C. Huang; Z. C. Shen; T. - L. Lee; F. E. Oropeza; J. P. Hofmann; E. J. M. Hensen; and K. H. L. Zhang; Chem. Mater. 31 (18), 7618-7625 (2019)
6.Tuning the electronic structure of NiO via Li doping for fast oxygen evolution reaction;
Fu Gaoliang; Wen Xiaojian; Chen Ziliang; Li Weiwei; Zhang Jia-Ye; Tadich Anton; Wu Renbing; Qi Dong-Chen; Du Yonghua; Cheng Jun*; Zhang Kelvin H. L.*; Chemistry of Materials, 2019, 31, 419.
7.P-type transparent conducting oxide;
Zhang Kelvin H. L.*; Xi Kai; Blamire Mark G; Egdell Russell G.; Journal of Physics: Condensed Matter, 2016, 28, 383002.
8.Perovskite Sr‐doped LaCrO3 as a new p‐type transparent conducting oxide;
Zhang Kelvin H. L.; Du Yingge; Papadogianni Alexandra; Bierwagen Oliver; Sallis Shawn; Piper Louis F. J.; Bowden Mark E.; Shutthanandan Vaithiyalingam; Sushko Peter V.; Chambers, Scott A.*; Advanced Materials, 2015, 27: 5191.
9.Hole-induced insulator-to-metal transition in La1?xSrxCrO3 epitaxial films;
Zhang Kelvin H. L.; Du Yingge; Sushko Peter V.; Bowden Mark E.; Shutthanandan V.; Sallis Shawn; Piper Louis F. J.; Chambers Scott A.*; Physical Review B, 2015, 91: 155129.
10.Reversible nano-structuring of SrCrO3-δ through oxidation and reduction at low temperatures;K. H. L. Zhang, P. V. Sushko, R. Colby, Y. Du, M. E. Bowden, S. A. Chambers; Nature Communications, 2014, 5, 4669.
11.Microscopic origin of electron accumulation in In2O3;
K. H. L. Zhang; R.G. Egdell; F. Offi; S. Iacobucci; L. Petaccia; S. Gorovikov; P. D. C. King; Physical Review Letter, 2013, 110, 056803

获奖情况： 国家高层次人才计划（2016）
英国剑桥大学Herchel Smith Research Fellow (2015)

台湾集成电路第五届 Outstanding Student Research Award 入围奖(签证原因为参赛)
英国牛津大学Clarendon Fund 全额奖学金 (2008-2011)