姓名
林光杨

职称
助理教授

办公室
物理大楼415

Email
gylin@xmu.edu.cn

个人主页
http://sigroup.xmu.edu.cn

研究领域
硅基发光材料与器件、光电探测器、IV族材料/二维材料新型光电性质研究

教育和工作经历
2021/03------至今 厦门大学 物理学系 助理教授
2018/08-2020/10 特拉华大学 电子与计算机工程系 博士后
2012/09-2018/06 厦门大学 物理科学与技术学院物理系微电子学与固体电子学专业 硕博连读
2008/09-2012/06 厦门大学 物理与机电工程学院物理系微电子学专业 本科

代表性文章或专著
(1) Guangyang Lin, Haiyang Hong, Jie Zhang, Peng Cui, Yichen Mao, Dongxue Liang, Jianyuan Wang, Songyan Chen, Cheng Li* and Yuping Zeng*, Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate, Journal of Alloys and Compounds 858, 157653 (2021).
(2) Guangyang Lin, Meng-Qiang Zhao, Meng Jia, Peng Cui, Haochen Zhao, Jie Zhang, A. T. Charlie Johnson, Lars Gundlach*, Xiaoshan Liu, and Yuping Zeng*, Improving the electrical performance of top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment, Journal of Physics D: Applied Physics 53, 415106 (2020).
(3) Guangyang Lin, Dongxue Liang, Zhiwei Huang, Chunyu Yu, Peng Cui, Jie Zhang, Jianyuan Wang, Jianfang Xu, Songyan Chen, Cheng Li*, and Yuping Zeng*, Fabrication of polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on SiO2/Si substrate, Semiconductor Science and Technology 35, 095016 (2020).
(4) Guangyang Lin, Meng-Qiang Zhao, Meng Jia, Jie Zhang, Peng Cui, Lincheng Wei, Haochen Zhao, A T Charlie Johnson, Lars Gundlach and Yuping Zeng*, Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer, Journal of Physics D: Applied Physics 53, 105103 (2020).
(5) Guangyang Lin, Dongxue Liang, Chunyu Yu, Haiyang Hong, Yichen Mao, Cheng Li* and Songyan Chen, Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique, Optics Express 27, 32801 (2019).
(6) Guangyang Lin, Dongxue Liang, Chunyu Yu, Haiyang Hong, Yichen Mao, Cheng Li*, Songyan Chen and Yuping Zeng*, Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method, Semiconductor Science and Technology 34, 125005 (2019).
(7) Guangyang Lin, Dongxue Liang, Jiaqi Wang, Chunyu Yu, Cheng Li*, Songyan Chen Wei Huang, Jianyuan Wang, Jianfang Xu, Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature, Materials Science in Semiconductor Processing 97, 56 (2019).
(8) Guangyang Lin, Jiaqi Wang, Zhiwei Huang, Yichen Mao, Cheng Li*, Wei Huang, Songyan Chen, Hongkai Lai and Shihao Huang, Optical gain from vertical Ge-on-Si resonant-cavity light emitting diodes with dual active regions, Applied Physics Letters 111, 111106 (2017).
(9) Guangyang Lin, Xiaohui Yi, Cheng Li*, Ningli Chen, Lu Zhang, Songyan Chen, Wei Huang, Jianyuan Wang, Xihuan Xiong, and Jiaming Sun, Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate, Applied Physics Letters 109, 141104 (2016). (Featured by Semiconductor Today news)
(10) Guangyang Lin, Chen Wang, Cheng Li*, Chaowen Chen, Zhiwei Huang,Wei Huang, Songyan Chen, Hongkai Lai, Chunyan Jin, and Jiaming Sun, Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature, Applied Physics Letters 108, 191107 (2016).
(11) Guangyang Lin, Ningli Chen, Lu Zhang, Zhiwei Huang,Wei Huang, JianyuanWang, Jianfang Xu, Songyan Chen and Cheng Li, Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate, Materials 9, 803 (2016).
(12) Guangyang Lin, Xiaoling Lan, Ningli Chen, Cheng Li*, Donglin Huang, Songyan Chen, Wei Huang, Jianfang Xu, Hongkai Lai, Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation, Materials Science in Semiconductor Processing 56, 282 (2016).
(13) Guangyang Lin, Mengrao Tang, Cheng Li*, Shihao Huang, Weifang Lu, Chen Wang, Guangming Yan, and Songyan Chen, Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height, Applied Physics Letters 103, 253506 (2013).