话题: channelbarrier更多
Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs
1.IntroductionOwingtothehighelectronmobility,highbreakdownelectricfield,highdensityofthetwo-dimensionalelectrongas(2DEG),andsuitabilityforcommercialSi ...中科院半导体研究所 本站小编 Free考研考试 2022-01-01