1.IntroductionSiliconcarbide(SiC)isconsideredtobeapromisingcandidateforpowerapplications,thankstoitssuperiormaterialproperties[1].Inparticular,theSiCM ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-011.IntroductionSiCMOSFET,asoneofthemostpromisingpowerswitchdevices,hasreplacedpartofSicounterpartinmanyapplications.Inacommonbridgerectifiercircuit,SiC ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-011.IntroductionSiCMOSFETshaveachievedgreatimprovements,bothindevicedesignandmaterialfabricationtechnology[1-5].Mostleadingsemiconductorcompaniesarework ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-011.Introduction4H-siliconcarbide(4H-SiC)MOSFETsareattractiveforconvertersandinverterswhichrequirefastswitchingspeedandlowspecificRon,sp,owingtosuperior ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-011.IntroductionGalliumoxide(Ga2O3)hasrecentlyattractedsignificantattentionasanewsemiconductormaterialforhigh-powerandhigh-efficiencyapplicationsinrecen ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-011.IntroductionCurrentmodeactivebuildingblocksofferawidedynamicrange,goodlinearityandhigherbandwidthwithlowsupplyvoltageovertheirvoltagemodecounterpart ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-01