话题: IGBTs更多
Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage
1.IntroductionSiCpowerdevicesareoneofthemostpopulardevicesinpowerdevicesbecauseofthesuperiorpropertiesof4H-SiC,suchasawidebandgapandahighcriticalelect ...中科院半导体研究所 本站小编 Free考研考试 2022-01-01