话题: Coeffect更多
Coeffect of trapping behaviors on the performance of GaN-based devices
1.IntroductionTheGaN-basedhigh-electron-mobilitytransistor(HEMT)isoneofthepromisingcandidatesfornextgenerationhigh-frequencyandhigh-powerelectronicdev ...中科院半导体研究所 本站小编 Free考研考试 2022-01-01