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电子邮箱: zengfei@tsinghua.edu.cn
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教育背景



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奖励与荣誉



学术成果


2002, 工学博士, 清华大学材料系材料物理与化学专业
1994, 工学硕士, 中科院上海微系统所材料物理专业
1991, 工学学士, 华中科技大学固体电子学系半导体物理与器件



2002-至今, 清华大学材料学（系）院
1996- 1999, 讲师, 中南大学材料系



中国真空学会理事



功能薄膜材料界面效应，存储、记忆与学习效应，材料的掺杂技术与物化性质。



近年主要从事类脑计算材料与器件研究，采用有机、无机的忆阻器（memristor）材料构造人工神经突触和纤维结构，模拟突触的可塑性、研究其产生机理。柔性电子材料与器件，可穿戴设备与材料。



任职以来发表SCI论文约200篇，SCI他引超过2400次，H因子35；授权国家发明专利16项；获国家自然科学二等奖（第二）、国家技术发明二等奖（第三）各1项，获2009年教育部新世纪人才计划支持。



近期论文（及专利）
1.Hu, Y. D.; Zeng, F.; Chang, C. T.; Dong, W. S.; Li, X. J.; Pan, F.; Li, G. Q., Diverse Synaptic Plasticity Induced by Interplay of Ionic Polarization and Doping at Salt-Doped Electrolyte/Semiconducting Polymer Interface. ACS Omega 2017, 2, 746-754.
2.Chang, C. T.; Zeng, F.; Li, J. X.; Dong, W. S.; Hu, Y. D.; Li, G. Q., Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions. RSC Adv. 2017, 7, 4017.
3.Chang, C. T.; Zeng, F.; Li, X. J.; Dong, W. S.; Lu, S. H.; Gao, S.; Pan, F., Simulation of synaptic short-term plasticity using Ba(CF3SO3)2-doped polyethylene oxide electrolyte film. Sci. Rep. 2016, 5, 18915.
4.Dong, W. S.; Zeng, F.; Lu, S. H.; Liu, A.; Li, X. J.; Pan, F., Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells. Nanoscale 2015, 7, 16880 - 16889.
5.Tang, G. S.; Zeng, F.; Chen, C.; Liu, H. Y.; Gao, S.; Song, C.; Lin, Y. S.; Chen, G.; Pan, F., Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer. Nanoscale 2013, 5, 422-428.
6.Gao, S.; Zeng, F.; Li, F.; Wang, M. J.; Mao, H. J.; Wang, G. Y.; Song, C.; Pan, F., forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. Nanoscale 2015, 7, 6031-6038.
7.Li, S. Z.; Zeng, F.; Chen, C.; Liu, H.; Tang, G. S.; Gao, S.; Song, C.; Lin, Y. S.; Pan, F.; Guo, D., Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system. J. Mater. Chem. C 2013, 1, 5292-5298.
8.Wang, Z. S.; Zeng, F.; Yang, J.; Chen, C.; Pan, F., Resistive switching induced by metallic filaments formation through poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate). ACS Appl. Mater. & Interfaces 2012, 4, 447-453.
9.Zeng, F.; Li, S. Z.; Yang, J.; Pan, F.; Guo, D., Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell. RSC Adv. 2014, 4, 14822.
10.Zeng, F.; Lu, S. H.; Li, S. Z.; Li, X. J.; Pan, F., Frequency Selectivity in Pulse Responses of Pt/Poly(3-Hexylthiophene-2,5-Diyl)/Polyethylene Oxide + Li+/Pt Hetero-Junction. PLoS ONE 2014, 9, e108316.
11.Wang, Z. S.; Zeng, F.; Yang, J.; Chen, C.; Yang, Y. C.; Pan, F., Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure. Appl. Phys. Lett. 2010, 97, 253301.
12.Chen, C.; Gao, S.; Zeng, F.; Wang, G. Y.; Li, S. Z.; Song, C.; Pan, F., Conductance quantization in oxygen-anion-migration-based resistive switching memory devices. Appl. Phys. Lett. 2013, 103, 043510.
13.Gao, S.; Zeng, F.; Wang, M. J.; Wang, G. Y.; Song, C.; Pan, F., Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch. Sci. Rep. 2015, 5, 15467.


在有机电解质/半导体异质结界面，输入信号可以调制离子在半导体中的掺杂和退掺杂状态，使得器件响应出现低频抑制和高频增强效应；经过强刺激调制的器件，由抑制转为增强的频率阈值会增大，而弱刺激下调制器件，频率阈值会减小。是典型的频率相关可塑性spike-rate-dependent plasticity SRDP，符合BCM学习理论。这种器件在微结构上有与突触非常相似的地方，电解质PEO是中心非晶、外圈晶态的纤维状结构，离子在非晶区迁移。电解质显微之差半导体层。因此结构类似突触胞膜上分布很多离子沟道。在沟道和外接频率的限制和调制下，呈现滑移的频率选择性。Dong, W. S. Zeng F et al. Nanoscale 7, 16880 - 16889 (2015).