文献详情
Sonochemical deposition of MoSx on ZnIn2S4 for photocatalytic hydrogen evolution
文献类型：期刊
通讯作者：Lin, J (reprint author), Renmin Univ China, Dept Chem, Beijing 100872, Peoples R China.
期刊名称：MATERIALS LETTERS影响因子和分区
年：2019
卷：247
页码：122-125
ISSN：0167-577X
关键词：Sonochemical deposition; Photocatalytic H-2 evolution; MoSx/ZnIn2S4
所属部门：化学系
摘要：Novel MoSx/ZnIn2S4 photocatalysts were fabricated by a facile sonochemical deposition route with (NH4)(2)MoS4 as a precursor. The 3.0 wt% MoSx/ZnIn2S4 has been shown to significantly enhance the photocatalytic performance for H-2 evolution under visible light (lambda >= 420 nm), which is 26 times higher than that of pristine ZnIn2S4.Various characterizations and further experimental results indicate that an intimate junction formed between MoS(x )and ZnIn2S4 via sonochemical route and the MoSx n ...More
Novel MoSx/ZnIn2S4 photocatalysts were fabricated by a facile sonochemical deposition route with (NH4)(2)MoS4 as a precursor. The 3.0 wt% MoSx/ZnIn2S4 has been shown to significantly enhance the photocatalytic performance for H-2 evolution under visible light (lambda >= 420 nm), which is 26 times higher than that of pristine ZnIn2S4.Various characterizations and further experimental results indicate that an intimate junction formed between MoS(x )and ZnIn2S4 via sonochemical route and the MoSx not only can promote the transfer of photo-generated electron, but also provides abundant coordinately unsaturated S atoms as active sites for H-2 evolution. This study paves a new way to design efficient semiconductor composites for photocatalytic H-2 evolution. (C) 2019 Elsevier B.V. All rights reserved. ...Hide

DOI：10.1016/j.matlet.2019.03.083
百度学术：Sonochemical deposition of MoSx on ZnIn2S4 for photocatalytic hydrogen evolution
语言：外文
人气指数：1
浏览次数：1
基金：National Natural Science Foundation of ChinaNational Natural Science Foundation of China [21673287]
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