蔡一茂 职称：研究员
研究所：微纳电子学研究院
研究领域：先进存储器、类脑芯片技术、柔性电子
办公电话：86-10-6276 9609
电子邮件：caiyimao@pku.edu.cn
个人主页：




科研/教育经历
2006年获得北京大学固体电子学与微电子学专业博士学位。随后在韩国三星电子存储器研发中心任高级研究员，从事先进非挥发性存储器架构和工艺研究。2009年，加入北京大学微电子学研究院，任副教授，教授。

主要研究方向
研究领域为先进存储器、柔性电子器件、神经形态器件及类脑芯片技术。

研究成果概况
主持国家重大专项、863课题、自然基金委项目等十余项国家级项目，在国内外专业期刊和会议上发表论文百余篇，获得中国发明专利授权20余项，美国专利授权十多项，部分成果已被国际半导体发展路线图（ITRS）采用以及被中芯国际集成电路制造公司共享使用。任《集成电路系列丛书》、《集成电路工业全书》编委，IEEE Electron Device Letters、 IEEE Transactions on Electron Devices 等专业期刊评审人。
1.主持863课题“RRAM存储阵列的设计和优化”（ 2011AA010402）
2.主持国家02重大专项子课题“32nm新型CTM闪存器件及阵列”
3.主持国家自然科学基金面上项目“超低功耗柔性聚合物RRAM”
4.主持国家自然科学基金面上项目“基于可变势垒的新型自整流超低功耗阻变存储器及其机理研究”
5.主持国家自然科学基金青年项目“ 适于纳米尺度低功耗应用的陷阱类闪存多栅新结构器件研究”
6. 参与国家“973”重大基础研究计划课题“高性能低功耗新型纳米尺度MOS器件基础研究”

Selected Publications
1. Jian Kang, Yimao Cai*, Ru Huang, et al., Time-Dependent Variability in RRAM-based Analog Neuromorphic System for Pattern Recognition, IEDM 2017
2. Min Lin, Qingyu Chen, Zongwei Wang, Yichen Fang, Jianfeng Liu , Yuchao Yang, Wei Wang, Yimao Cai,* and Ru Huang, Flexible polymer device based on Parylene-C with memory and temperature sensing functionalities, Polymers 9(8), 310; doi:10.3390/polym** (2017)
3. Wang, Zongwei; Kang, Jian; Yu, Zhizhen; Fang, Yichen; Ling, Yaotian; Cai, Yimao*; Huang, Ru; Wang, Yangyuan, "Modulation of non-linear resistive switching behavior of TaOx-based resistive device through interface engineering", Nanotechnology. vol. 28, no.5, 055204. (2016)
4. X. Yang, Y. Fang, Z. Yu, Z. Wang, T. Zhang, M. Yin, M. Lin, Y. Yang, Y. Cai*and R. Huang,“Nonassociative Learning Implementation by Single Memristor-based Multi-terminal Synaptic Device” ，Nanoscale, DOI: 10.1039/C6NR04142F (2016)
5. Muxi Yu, Yimao Cai*, Zongwei Wang, Yichen Fang, Yefan Liu, Zhizhen Yu, Yue Pan,Zhenxing Zhang, Jing Tan, Xue Yang, Ming Li, Ru Huang, Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation. Sci. Rep. 6, 21020; doi: 10.1038/srep21020 (2016).
6. Yue Pan, Yimao Cai*, Yefan Liu, Yichen Fang, Muxi Yu, Shenghu Tan,Ru Huang, “ Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement”, Appl. Phys. Lett. 108, 153504 (2016)
7. Cai, Yimao*; Tan, Jing; Liu, Yefan; Lin, Min; Huang, Ru,"A Flexible Organic Resistance Memory Device for Wearable Biomedical Applications",Nanotechnology,27 275206 (2016)
8. Muxi Yu, Yimao Cai*, Yichen Fang, Zongwei Wang, Yue Pan, Ming Li, Ru Huang, “Self-Selection Effects and Modulation of TaOx RRAM with Bottom Electrode of Highly-Doped Si”, Journal of Applied Physics, vol. 119, 195302（2016）
9. Muxi Yu, Yichen Fang1, Zongwei Wang, Gong Chen, Yue Pan, Xue Yang, Minghui Yin, Yuchao Yang, Ming Li, Yimao Cai* and Ru Huang, “Encapsulation layer design and scalability in encapsulated vertical 3D RRAM”, Nanotechnology, vol. 27, 205202 (2016)
10. Bai Wenliang，Huang Ru，Cai Yimao(*)，Tang Yu，Zhang Xing，Wang Yangyuan，“Record Low-Power Organic RRAM with sub-20-nA reset current”，IEEE Electron Device Letters，34（2）：223-225 (2013)
11. Huang Yinglong, Huang Ru，Pan Yue，Zhang Lijie，Cai Yimao(*)，Yang Gengyu，Wang Yangyuan，“A new dynamic selector based on the bipolar rram for the crossbar array application”，IEEE Transactions on Electron Devices， 59（8）：2277-2280 (2012)
12. Lijie Zhang, Ru Huang，Dejin Gao, Pan Yue, Poren Tang, Fei Tan, Yimao Cai, Yangyuan Wang, “Total Ionizing Dose (TID) Effects on TaOx -Based Resistance Change Memory”, IEEE Transactions on Electron Devices 58(8): 2800 - 2804 (2011)