WangXQ
吉林大学博士（2002）
半导体光电子学（凝聚态物理与材料物理研究所）
;电话：**E-mail：wangshi_at_pku.edu.cn
http://www.phy.pku.edu.cn/~xinqiangwang/index.html
物理大楼北444
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Welcome to Wang's group. This lab was set up in 2009, belonging to Research Center for Wide Gap Semiconductor of Peking University. Our group focuses on the growth mechanism and device applications of III-nitrides, such as solar cell, single photon source, resonant tunneling diodes, UV/IR dual bands detectors, deep-UV light source and so on. We have upgraded SVTA-MBE system in order to expand growth ability in the forefront of nitride materials research and set up an integrated MBE system with angle-resolved photoelectron spectroscopy, which is propitious to explore new materials and devices. Visitors and undergraduate students are always welcome!
NEWS[Read More] » Sun's work was published in “ OPTICAL MATERIALS EXPRES (Vol.7, No.3 | 1 Mar 2017 | OPTICAL MATERIALS EXPRESS 907)” -- “Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires”
» Ma & Rong's work was published in “Scientific RepoRts |7:46420|DOI: 10.1038/srep46420” -- “Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy”
» Wang's work was published in “Adv. Funct. Mater. 2017, 27, **” -- “Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods”
» Chen's work was published in “Applied Physics Letters (DOI: 10.1063/1.**)” -- “Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs”
» Rong's work was published in “Advanced Materials (DOI: 10.1002/adma.)” -- “High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure”
» Rong's work was published in “Superlattice Microst (DOI:10.1016/j.spmi.2016.02.050)” --“Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy”
» Zheng's work was published in “Optical Materials Express (DOI:10.1364/ome.6.000815)” --“Photoconductivity in InxGa1-xN epilayers”
» Wang's work was published in “Nano Letters (DOI: 10.1021/acs.nanolett.5b04726)” --“Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires”
» Rong's work was published in “Scientific Reports (DOI:10.1038/srep14386)” --“Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells”
» Chen's work was published in “Scientific Reports (DOI:10.1038/srep11485)” --“Intersubband Transition in GaN/InGaN Multiple Quantum Wells”
» Professor Wang's work was published in “Nature Nanotechnology (DOI:10.1038/nnano.2014.183)” --“Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2”
OpeningUndergraduates：
We are glad to provide a research platform with enough freedom for undergraduate students interested in science. Welcome to join our team. We look forward to the horizon of nitride semiconductors and new materials.
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Opening Graduate：
Besides the study of Ⅲ-nitride semiconductor materials, we are devoted to further developing the two-dimensional materials by molecular beam epitaxy system. We are looking for enthusiastic students with physics, material, electronics or other related education background to join us.
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OpeningPostdoctoral：
We would like to invite the doctors with academic background of physics, material, electronics and relevant fields to our team.
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State Key Laboratory For Artificial Microstructure and Mesoscopic Physics, Peking UniversityAddress: Room N444, north of physic building, Peking University, Beijing 100871, China
Tel: +86-
E-mail:?wangshi_at_pku.edu.cn
Laboratory: Room N455, north of Physics buildingMore Details
