关键词: 绝缘体上硅/
单粒子翻转/
二次电子/
能损歧离
English Abstract
Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions
Zhang Zhan-Gang,Lei Zhi-Feng,
Yue Long,
Liu Yuan,
He Yu-Juan,
Peng Chao,
Shi Qian,
Huang Yun,
En Yun-Fei
1.Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant No. 11505033), the Science and Technology Research Project of Guangdong, China (Grant Nos. 2015B090901048, 2017B090901068, 2015B090912002), and the Science and Technology Plan Project of Guangzhou, China (Grant No. 201707010186).Received Date:01 July 2017
Accepted Date:29 August 2017
Published Online:05 December 2017
Abstract:Based on Monte-Carlo method, the characteristics and physical mechanisms for deposited-energy spectra in sensitive volume (SV), single event upset cross sections, and on-orbit error rates in 65-32 nm silicon-on-insulator static random access memory (SOI SRAM) devices induced by space energetic ions are investigated. Space ions on geostationary earth orbit exhibit a flux peak at an energy point of about 200 MeV/n. In consequence, the single event response of nanometric SOI SRAMs under 200 MeV/n heavy ions is studied in detail. The results show that 200 MeV/n space ions exhibit the large straggling of deposited-energy in the device SV with thickness ranging from 60 nm to 40 nm, which causes the single event upsets to occur in the sub-LETmth region. The device SV can only partially collect the electron-hole pairs in the single ion track with a wide distribution of secondary electrons. As a result, the maximum and average deposited-energy in the SV decrease by 25% and 33.3%, respectively. Further, the single event upset probability decreases and the on-orbit error rate decreases by about 80%. With the downscaling of feature size, the per-bit saturated cross sections and on-orbit error rates of nanometric SOI SRAM devices decrease dramatically. The phenomenon of constant-increasing single event upset cross section with higher ion linear energy transfer (LET) is not observed, owing to the fact that (a) the density of electron-hole pairs in the track of 200 MeV/n space ion is relatively low and (b) the SOI device has thin sensitive volume, which results in the fact that the secondary-electron effect cannot upset nearby sensitive cells. Besides, it is found that the direct-ionization process of trapped protons leads to an increase of on-orbit error rate of 65 nm SOI SRAM by one to two orders of magnitude.
Keywords: silicon-on-insulator/
single event upset/
secondary electron/
deposited energy straggling
