关键词: 石墨烯/
场效应晶体管/
光电器件/
传感器
English Abstract
Research status and development graphene devices using silicon as the subtrate
Wu Pei1,2,Hu Xiao1,2,
Zhang Jian1,2,
Sun Lian-Feng1
1.CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nonoscience and Technology, Beijing 100190, China;
2.College of Materials Science and Opt-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
Fund Project:Project supported by the Major Nanoprojects of Ministry of Science and Technology of China (Grant No. 2016YFA0200403) and the National Natural Science Foundation of China (Grant No. 51472057).Received Date:04 July 2017
Accepted Date:06 September 2017
Published Online:05 November 2017
Abstract:Graphene, a two-dimensional sheet of sp2-hybridized carbon material, possesses excellent properties, such as high carrier mobility, high electrical conductivity, high thermal conductivity, strong mechanical strength and quantum anomalous Hall effect. So graphene quickly lights the enthusiasm for its research and application due to its superior performance. The silicon-based graphene devices are compatible with traditional silicon-based semiconductor technology. The combination of silicon-based graphene devices and silicon-based devices can greatly improve the overall performances of semiconductor devices. With the optimization of graphene preparation process and transfer technology, graphene devices using silicon as the substrate will show promising potential applications. With the scaling of device, the heat dissipation, power consumption and other issues impede the integration of silicon-based devices. Graphene provides a possible solution to these problems. In this paper, we summarize the graphene application in field effect transistor. The bandgap of graphene is zero, which will have adverse effect on the switching ratio of the device. In order to solve this problem, a variety of methods are used to open its bandgap, such as the quantum confinement method, the chemical doping method, the electric field regulation method, and the introduction stress method. In the field of optoelectronic devices, graphene can evenly absorb light at all frequencies, and its photoelectric properties have also been widespread concerned, such as photoelectric detector, photoelectric modulator, solar cell, etc. At the same time, graphene, as a typical two-dimensional material, possesses superior electrical properties and ultra-high specific surface area, and becomes the hottest material in high sensitivity sensors.
Keywords: graphene/
field effect transistor/
optoelectronic devices/
sensor
