关键词: 中波红外探测/
量子阱红外探测器件/
InGaAs/AlGaAs多量子阱/
温致弛豫
English Abstract
Barrier growth temperature of InGaAs/AlGaAs-quantum well infrared photodetector
Huo Da-Yun,Shi Zhen-Wu,
Zhang Wei,
Tang Shen-Li,
Peng Chang-Si
1.School of Optoelectronics Information Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant No. 11504251), the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), China, the International Cooperation Project by MOST, China (Grant No. 2013DFG12210), the Natural Science Research Project of Jiangsu Higher Education, China (Grant No. 12KJA140001), and the Post-graduate Innovation Project of Jiangsu Higher Education, China (Grant No. KYLX15_1252).Received Date:20 July 2016
Accepted Date:22 December 2016
Published Online:05 March 2017
Abstract:The InGaAs/AlGaAs quantum wells have been extensively applied to quantum well infrared photodetector of mid-wavelength. In this letter, four samples of 2.4 nm In0.35Ga0.65As/40 nm Al0.34Ga0.66As multi-quantum wells are grown by molecular beam epitaxy with the InGaAs wells growing all at a temperature of 465℃ but the AlGaAs wells growing at temperatures of 465℃, 500℃, 545℃, and 580℃ respectively. The dependence of InGaAs quantum well strain relaxation on the AlGaAs growth temperature is systematically studied by photoluminescence spectroscopy and X-ray diffraction and then the thermal-induced relaxations of three key-stages are clearly observed in the following temperature ranges. 1) 465-500℃ for the stage of elastic relaxation: the phase separation begins to take place with a low defect density; 2) 500-545℃ for the transition stage from elastic relaxation to plastic relaxation: the phase separation will be further intensified with defect density increasing; 3) 545-580℃ for the fast stage dominated by elastic relaxation and the defect density will sharply increase. Especially when AlGaAs temperature increases to 580℃, a very serious plastic relaxation will take place and the InGaAs quantum well will be dramatically destroyed.
Keywords: mid-infrared detection/
quantum well infrared photodetector/
InGaAs/AlGaAs multi-quantum wells/
thermal-induced relaxation
