关键词: 铝镓氮(AlGaN)/
多层纳米薄膜/
量子结构增强场发射/
共振隧穿效应
English Abstract
Preparations and field emission properties of multilayer AlGaN nanofilm
Shen Zhen1,Chen Cheng-Cheng1,2,
Wang Ru-Zhi1,
Wang Bo1,
Yan Hui1
1.College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;
2.Beijing Products Quality Supervision and Inspection Institute, Beijing 101300, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant Nos. 11274029, 11074017) and the Jing-Hua Talents Project of Beijing University of Technology, China (Grant No. 2014-JH-L07).Received Date:21 April 2016
Accepted Date:28 August 2016
Published Online:05 December 2016
Abstract:We report on the electron field emission (FE) from multi-layer AlGaN nanofilm grown by pulsed laser deposition, and the investigation of the multi-layer quantum structure effect on the field emission performance. The results show that the as-grown film has a good crystallinity, and the thickness values of GaN, AlN, and GaN film are 25 nm, 50 nm, and 25 nm, respectively. The FE measurement indicates that compared with single layer, the multilayer filmhas a low turn-on field and large threshold current. The turn-on filed is found to be 0.93 V/m, and the electric current density reaches to 30 mA/cm2 at 5.5 V/m. The improvement of the FE performance is attributed to resonant tunneling in the quantum well structure, and the accumulated electrons lower the effective surface barrier. The outstanding performance of multi-layer filed emission film should provide a feasible technical solution for large current and high power density thin film field emission device.
Keywords: AlGaN/
multilayer nanofilm/
quantum structure enhanced field emission/
resonant tunneling
