关键词: 激光退火/
电子束辐照/
晶化/
纳米硅
English Abstract
Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states
Wu Xue-Ke1,2,4,Huang Wei-Qi2,
Dong Tai-Ge2,
Wang Gang2,
Liu Shi-Rong3,
Qin Chao-Jie3
1.College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;
2.Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;
3.State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China;
4.College of Physics and Electronic Engineering, Kaili University, Kaili 556011, China
Fund Project:Project supported by the National Natural Science Foundation of China (Grant Nos. 61465003, 11264007).Received Date:13 August 2015
Accepted Date:06 February 2016
Published Online:05 May 2016
Abstract:In the process of preparing nanosilicon, the crystallization process is an important part to influence and improve the efficiency of nanosilicon luminescence. Thermal annealing, laser annealing, and electron beam irradiation are different ways of crystallizing the nanosilicon. Different photoluminescence (PL) spectra and structures of nanocrystalline silicon are observed for different treatment time of crystallization. The experimental results show that choosing an appropriate crystallization method and parameters is very important for preparing the nanosilicon crystalline structures. High luminous efficiency can be obtained by controlling the parameters properly in the processes of preparing silicon quantum dots (QDs) and quantum surface, especially. It is discovered experimentally that better nanosilicon crystalline structure such as nanosilicon QD structure, better PL luminescence, and the doped localized state luminescence of nanocrystalline silicon can be obtained when the crystallization time is about 20 min. According to the nanosilicon crystallization process under thermal annealing, laser annealing and electron beam irradiation, a physical model of the effect of crystallization time on the nanosilicon localized state luminescence is established in this paper, which can explain the effect of crystallization time on the localized state luminescence of the nanosilicon.
Keywords: laser annealing/
electron beam irradiation/
crystallization/
nanosilicon
