关键词: VZO薄膜/
磁控溅射/
第一性原理计算/
太阳电池
English Abstract
Investigation of V doped ZnO transparent conductive oxide films
Wang Yan-Feng1,Meng Xu-Dong1,
Zheng Wei1,
Song Qing-Gong2,
Zhai Chang-Xin1,
Guo Bing1,
Zhang Yue1,
Yang Fu1,
Nan Jing-Yu1
1.Institute of New Energy Science and Technology of Hebei North University, College of Science, Hebei North University, Zhangjiakou 075000, China;
2.College of Science, Civil Aviation University of China, Tianjin 300300, China
Fund Project:Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11404088), the Natural Science Foundation of Hebei Province, China (Grant No. F2015405011), the Ordinary University Youth Talent Project of Hebei Province, China (Grant No. BJ2014003), the Science and Technology Support Program of Hebei Province, China (Grant No. 11215168), the Major Projects of Hebei North University, China (Grant No. ZD201401), the Doctoral Scientific Research Foundation of Hebei North University, China, the Youth Fund of Hebei North University, China (Grant No. Q2014001), the Project of the Department of Education of Hebei Province, China (Grant No. QN2015148), and the Science and Technology Research and Development Program Self-Funded Project of Zhangjiakou City of 2013, China (Grant No. 20131017B).Received Date:03 September 2015
Accepted Date:28 January 2016
Published Online:05 April 2016
Abstract:The performance of the ZnO film that is an indispensable part of pin-type Si-based thin-film solar cells, plays a crucial role in high-efficiency thin-film solar cells and also forms a significant part in photovoltaic research and development. In this paper, low resistivity and wide broadband spectrum transmittance vanadium (V) doped ZnO (VZO) films are successfully fabricated on Corning XG substrates at various substrate temperatures (STs). The properties of VZO films are investigated by the radio-frequency magnetron sputtering technique and plane wave pseudo-potential method based on the density-functional theory. The experimental results demonstrate that all the VZO flms have (002) preferred orientation with the c-axis perpendicular to the substrate, and the crystalline quality is found to increase with the substrate temperature (ST) rising up to 280 ℃ and decrease when the ST increases further. The optimal VZO film is achieved at 280 ℃ with a resistivity of 3.810-3 cm and an average transmittance of more than 85% in a range of 500-2000 nm. The theoretical result shows that after incorporation of V the Fermi level goes through the conduction band, showing a typical n-type metallic characteristic. The carriers originate from the orbits of V 3d and O 2p. The calculated lattice constants and mobility for VZO film are in agreement well with the experimental results. The consistency of the theoretical results with the experimental results shows that the VZO thin film has a great potential application as a front contact in high-efficiency thin film solar cells.
Keywords: VZO film/
magnetron sputtering/
first principle calculations/
solar cells
