李斌
中国电子科技集团公司第五十四研究所 石家庄 050081
基金项目:河北省省级科技计划(18960202D)
详细信息
作者简介:杨格亮：男，1982年生，博士、高级工程师，研究方向为微波毫米波单片集成电路设计
李斌：男，1972年生，研究员级高级工程师，研究方向为通信与信息处理
通讯作者:杨格亮 gelsyang@qq.com
中图分类号:TN773计量
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被引次数:0
出版历程
收稿日期:2020-11-09
修回日期:2021-03-25
网络出版日期:2021-04-13
刊出日期:2021-06-18
Wide-IF-bandwidth CMOS Down-conversion Mixer MMIC
Geliang YANG,,Bin LI
The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050081, China
Funds:S&T Program of Hebei (18960202D)
摘要
摘要:该文介绍了一种工作于毫米波频段的宽中频(IF)下变频器。该下变频器基于无源双平衡的设计架构，片上集成了射频(RF)和本振(LO)巴伦。为了优化无源下变频器的增益、带宽和隔离度性能，电路设计中引入了栅极感性化技术。测试结果表明，该下变频器的中频带宽覆盖0.5～12 GHz。在频率为30 GHz、幅度为4 dBm的LO信号驱动下，电路的变频增益为–8.5～–5.5 dB。当固定IF为0.5 GHz、LO幅度为4 dBm时，变频增益随25～45 GHz的RF信号在–7.9～–5.9 dB范围内变化，波动幅度为2 dB。LO-IF, LO-RF, RF-IF的隔离度测试结果分别优于42, 50, 43 dB。该下变频器芯片采用TSMC 90 nm CMOS工艺设计，芯片面积为0.4 mm2。
关键词:CMOS集成电路/
毫米波/
变频器/
宽中频
Abstract:A wide-Intermediate-Frequency (IF) down-conversion mixer operating in millimeter-wave band is proposed. The mixer is designed based on a passive double-balanced structure integrating Radio-Frequency (RF) and Local-Oscillator (LO) baluns. To optimize the performances in terms of the Conversion Gain (CG), bandwidth and isolations of the mixer, the gate-inductive technique is employed. The measured results show that the mixer features a wide IF bandwidth from 0.5 to 12 GHz. A measured CG of –8.5～–5.5 dB is achieved within such a wide IF band at a LO power (PLO) of 4 dBm and a LO frequency (fLO) of 30 GHz. The proposed mixer also achieves a CG with a ripple of 2 dB from –7.9 to –5.9 dB in a wide RF band (fRF) from 25 to 45 GHz at a PLO of 4 dBm and a fixed IF frequency (fIF) of 0.5 GHz. The measured LO-to-IF, LO-to-RF and RF-to-IF isolations are better than 42, 50 and 43 dB, respectively. The chip is fabricated in TSMC 90 nm CMOS process with an area of 0.4 mm2.
Key words:CMOS integrated circuit/
Millimetre-wave/
Mixer/
Wide IF
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