基本信息
魏同波男博导中国科学院半导体研究所
电子邮件： tbwei@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号中科院半导体研究所
邮政编码： 100083
部门/实验室：半导体照明研发中心
研究领域

招生信息
招生专业080501-材料物理与化学
0805Z2-半导体材料与器件

招生方向GaN基材料外延及相关发光器件
微纳LED光电器件
深紫外LED


教育背景2015-12--2016-12康奈尔大学访问
2004-09--2007-06中科院半导体研究所博士
2001-09--2004-06中科院兰州化学物理研究所硕士
1997-09--2001-06山东师范大学学士

学历
学位

工作经历
工作简历2018-01~现在,中科院半导体研究所,研究员
2015-12~2016-12,康奈尔大学,访问
2011-01~2017-12,中科院半导体研究所,副研究员
2007-07~2010-12,中科院半导体研究所,助理研究员
2004-09~2007-06,中科院半导体研究所,博士
2001-09~2004-06,中科院兰州化学物理研究所,硕士
1997-09~2001-06,山东师范大学,学士

社会兼职

教授课程

专利与奖励
奖励信息
专利成果（ 1 ） 制备半球形微纳米透镜阵列的方法, 2012, 第 1 作者, 专利号: 4.3
（ 2 ） 一种在蓝宝石衬底上生长非极性GaN厚膜的方法, 2012, 第 1 作者, 专利号: ZL.3.X
（ 3 ） 一种基于纳米柱二极管压电效应的应力传感器的制备方法, 2014, 第 1 作者, 专利号: 7.8
（ 4 ） 一种生长GaN厚膜的自剥离方法, 2014, 第 1 作者, 专利号: 4.X
（ 5 ） 基于Ga2O3 衬底的垂直结构紫外 LED 及其制备方法, 2018, 第 1 作者, 专利号: 1.7
（ 6 ） 显指可调的无荧光粉单芯片白光LED器件, 2018, 第 1 作者, 专利号: 7.6
（ 7 ） MSM 型多孔氧化镓日盲探测器及其制 造方法, 2018, 第 1 作者, 专利号: 2.8


出版信息
发表论文（1）Improved epitaxy of AlN film for deep-ultraviolet light-emitting diodes enabled by graphene,Advanced Materials,2019,第11作者
（2）High performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized ?-Ga2O3 layer,Opt. Lett.,2019,第11作者
（3）Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate,Appl. Phys. Lett.,2019,第11作者
（4）Phosphor-Free Three-Dimensional Hybrid White LED With High Color-Rendering Index,IEEE PHOTONICS JOURNAL,2019,第11作者
（5）Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs,Micromachines,2019,第11作者
（6）Enhancement of Heat Dissipation for Ultraviolet Light-Emitting Diodes by a Vertically-Oriented Graphene Nanowalls Buffer Layer,Advanced Materials,2019,第11作者
（7）Fast Growth of Strain-free AlN on Graphene-buffered Sapphire,J. Am. Chem. Soc.,2018,第11作者
（8）High-quality semipolar (10(1)over-bar(3)over-bar) GaN grown on carbon nanotube-patterned sapphire by hydride vapor phase epitaxy,JAPANESE JOURNAL OF APPLIED PHYSICS,2018,第11作者
（9）Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy,SUPERLATTICES AND MICROSTRUCTURES,2018,第11作者
（10）Directly Grown Graphene as buffer layer to enable high brightness InGaN light emitting diodes,Advanced Materials,2018,第11作者
（11）Direct van der Waals epitaxy of GaN-based light emitting diodes on wet-transferred multi-layer graphene film,Jnpanese Journal of Applied Physics,2017,第11作者
（12）Ehnanced output power of light-emitting diodes with embedded ari-gap photonic crystals by nanosphere lithography,IEEE Photonics Journal,2017,第11作者
（13）Versatile nanosphere lithography technique combining multiple-exposure nanosphere lens lithography and nanosphere template lithography,Chinese Optics Letters,2017,第11作者
（14）Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography,Nanotechnology,2017,第11作者
（15）Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy,Scientific Reports,2016,第1作者
（16）Multiple –exposure colloidal lithography for enhancing light output of GaN-based light-emitting diodes by patterning Ni/Au electrodes,Optics Express,2016,第11作者
（17）Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes,IEEE Photonics Journal,2016,第11作者
（18）Graphene-assisted growth of high quality AlN by metalorganic chemical vapor deposition,Japanese Journal of Applied Physics,2016,第11作者
（19）Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes,Optics Express,2015,第11作者
（20）Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode,RSC Adv.,2015,第11作者
（21）Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes,Opt. Lett. 39, 379 (2014),2014,第1作者
（22）Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals,Opt. Express 22, A1093 (2014),2014,第1作者
（23）Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes,AIP Advances 4, 067119 (2014),2014,第1作者
（24）Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes,Opt. Express 22, A1001 (2014),2014,第11作者
（25）Hydride vapor phase epitaxy of {10 3} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres,J. Crystal Growth 387, 101 (2014),2014,第11作者
（26）Investigation of efficiency and droop behavior comparison for InGaN/GaN super wide-well light emitting diodes grown on different substrates,IEEE Photonics Journal, 6, ** (2014),2014,第1作者
（27）Defects reduction in semipolar {10 3} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth,CrystEngComm, 16, 4562 (2014),2014,第11作者
（28）Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography, Appl. Phys. Lett. 105, 013108 (2014) ,2014,第11作者
（29）Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography,J. Appl. Phys. 116, 194301 (2014),2014,第11作者
（30）Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays,J. Crystal Growth 394, 7 (2014) ,2014,第11作者
（31）The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing,AIP Advances 4, 027123 (2014),2014,第11作者
（32）Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography,Chin. Phys. B 23, 028504 (2014),2014,第11作者
（33）Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography,J. Appl. Phys. 115, 123101 (2014),2014,第11作者
（34）Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal,Small, 10, 1668 (2014),2014,第2作者
（35）Phosphor-free nanopyramid white light-emitting diodes grown on {10 1} planes using nanospherical-lens photolithography,Appl. Phys. Lett. 103, 241107 (2013),2013,第11作者
（36）Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography,AIP Advances 3, 092124 (2013),2013,第11作者
（37）Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced lightextraction of light-emitting diodes,Opt. Express 21, 25373 (2013),2013,第11作者
（38）Shape designing for light extraction enhancement bulk-GaN light-emitting diodes,J. Appl. Phys.113, 243104 (2013) ,2013,第11作者
（39）Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier,ECS Solid State Lett. 2, R37 (2013),2013,第11作者
（40）Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages,Jpn. J. Appl. Phys. 2013, 52: 040207,2013,第11作者
（41）Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells,Phys. Status Solidi A, 2013, 210: 559,2013,第2作者
（42）Improvement of carrier distribution in dual wavelength light-emitting diodes,Journal of semiconductor , 2013, 34: 054008 ,2013,第2作者
（43）Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography,Applied Physics Letters, 2012, 101: 211111,2012,第1作者
（44）Improving light output of vertical-stand-type InGaN light emitting diodes grown on free-standing GaN substrate with self-assembled conical arrays,IEEE Electron Device Letter, 2012，33：857,2012,第1作者
（45）Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres,Mater. Lett. 2012, 68: 327,2012,第1作者
（46）Light extraction enhancement of bulk GaN light emitting diode with hemisphere-cones-hybrid surface,Optics Express, 2012, 20:18537,2012,第11作者
（47）Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy,Mat. Sci. Semconi. Proc., 2012, 15: 15,2012,第2作者
（48）Enhancement in the light output power of GaN-based light-emitting diodes with nanotextured indium tin oxide layer using self-assembled cesium chloride nanospheres,Jpn. J. Appl. Phys. 2012, 51: 020204,2012,第11作者
（49）Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,Appl. Phys. Lett., 2012, 100: 053504,2012,第3作者
（50）Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands,Optics Express, 2011, 19:1065,2011,第1作者
（51）Defect-related emission characteristics nonpolar m-plane GaN revealed by selective etching,J. Crystal Growth, 2011, 314:141,2011,第1作者
（52）Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown free-standing GaN substrate,Appl. Phys. Lett., 2011, 99: 091104,2011,第11作者
（53）MOCVD epitaxy of InAlN on different templates,Journal of Semiconductors, 2011, 32: 09300,2011,第2作者
（54）Hydride vapor phase epitxay growth of semipolar (10 ) GaN on patterned m-plane sapphire,Journal of The Electrochemical Society, 2010, 157: H721,2010,第1作者
（55）Catalytic activation of Mg-doped GaN by hydrogen desorption using different metal thin layers,Jpn. J. Appl. Phys. 2010, 49: 100201,2010,第1作者

发表著作

科研活动
科研项目（ 1 ） GaN基纳米柱LED选区外延及相关光电基础科学问题研究, 主持,国家级,2015-01--2018-12
（ 2 ） 第三代半导体新型照明材料与器件研究, 主持,国家级,2018-05--2021-04
（ 3 ） 二维石墨烯柔性转移氮化物LED的生长与机制研究, 主持,省级,2018-01--2020-12

参与会议（1）Cross-st acked carbon nanotubes assisted self-separation offree-standing GaN substrates by hydride vapor phase epitaxy2015-08-31


合作情况
项目协作单位

指导学生