基本信息
陈平平男博导中国科学院上海技术物理研究所
电子邮件： ppchen@mail.sitp.ac.cn
通信地址： 上海市玉田路500号
邮政编码： 200083

研究领域

招生信息
招生专业070205-凝聚态物理
080903-微电子学与固体电子学

招生方向半导体材料和物理
低维半导体材料


教育背景1995-09--1999-03南京大学博士
1991-09--1994-08中科院上海技术物理研究所硕士
1987-09--1991-06杭州大学学士

学历
学位

工作经历
工作简历2004-01~现在,中科院上海技术物理研究所,副研究员，研究员
2001-06~2003-12,日本 东北大学,博士后（COE研究员）
1999-03~2001-05,中科院上海技术物理研究所,博士后
1995-09~1999-03,南京大学,博士
1991-09~1994-08,中科院上海技术物理研究所,硕士
1987-09~1991-06,杭州大学,学士

社会兼职

教授课程

专利与奖励
奖励信息
专利成果（ 1 ）  Bi元素调控GaAs基纳米线晶体结构的分子束外延生长方法, 2013, 第 1 作者, 专利号: 3.7
（ 2 ） 一种可用作光学微腔的GaSb纳米盘的分子束外延生长方法, 2015, 第 1 作者, 专利号: 3.3
（ 3 ） 一种基于共振遂穿效应的GaAs基双色量子阱红外探测器:, 2018, 第 3 作者, 专利号: 7.7


出版信息
发表论文（1）Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire,ACS nano,2019,第11作者
（2）High-responsivity and polarization-discriminating terahertz photodetector based on plasmonic resonance,APPLIED PHYSICS LETTERS,2019,第11作者
（3）Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime,Nanoscale,2019,第11作者
（4）Cut-off wavelength manipulation of pixel-level plasmonic microcavity for long wavelength infrared detection,APPLIED PHYSICS LETTERS,2019,第8作者
（5）Raman spectroscopic determination of hole concentration in undoped GaAsBi,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2019,第5作者
（6）Anomalous arsenic diffusion at InGaAs/InP interface,MATERIALS RESEARCH EXPRESS,2019,第4作者
（7）Imaging of nonlocal hot-electron energy dissipation via shot noise,Science,2018,第5作者
（8）Photoreflectance and photoreflectance excitation study of optical transitions in GaAsBi /GaAs heterostructure,J.Appl.Phys.,2018,第3作者
（9）High intersubband absorption in long-wave quantum well infrared photodetector based on waveguide resonance,J.Phys.D,2018,第11作者
（10）In Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires on Atomic Scale,Nano Letters,2018,第5作者
（11）Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy,CRYSTALS,2017,第11作者
（12）Self-Assembly Growth of In-Rich InGaAs Core?Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity,Nano letter,2017,第4作者
（13）Low temperature photo-induced carrier dynamics in the GaAs0.985N0.015 alloy,JOURNAL OF ALLOYS AND COMPOUNDS,2017,第4作者
（14）High efficiency optical coupling in long wavelength quantum cascade infrared detector via quasi-one-dimensional grating plasmonic micro-cavity,JOURNAL OF APPLIED PHYSICS,2017,第6作者
（15）Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination,APPLIED PHYSICS LETTERS,2017,第3作者
（16）Unexpected formation of a hierarchical structure in ternary InGaAs nanowires via “one-pot” growth,Nanoscale,2017,第3作者
（17）Phase purification of GaAs nanowires by prolonging the growth duration in MBE,Journal of Materials Chemistry C,2017,第4作者
（18）Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire,NANO LETTERS,2016,第10作者
（19）Highly photoresponsive charge-sensitive infrared phototransistors with a dynamically controlled optical gate,APPLIED PHYSICS LETTERS,2016,第5作者
（20）Pixel-level plasmonic microcavity infrared photodetector,SCIENTIFIC REPORTS,2016,第5作者
（21）Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector,AIP ADVANCES,2016,第5作者
（22）Fabrication of individual carbon nanotubes and their arrays in a transmission electron microscope,CARBON,2016,第6作者
（23）Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires,NANO LETTERS,2016,第4作者
（24）Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy,JOURNAL OF PHYSICAL CHEMISTRY C,2016,第6作者
（25）Controlling the crystal phase and structural quality of epitaxial InAs nanowires by tuning V/III ratio in molecular beam epitaxy,Acta Materialia,2015,第3作者
（26）Catalyst Orientation-Induced Growth of Defect-Free Zinc-BlendeStructured (001) InAs Nanowires ,Nano Letters,2015,第4作者
（27）Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures,Nanoscale Research Letters,2015,第11作者
（28）Quantum dot single-photon switches of resonant tunneling current fordiscriminating-photon-number detection ,SCIENTIFIC REPORTS,2015,第4作者
（29）Morphology and Microstructure of InAs Nanowires on GaAs Substrates Grown by Molecular Beam Epitaxy,CHINESE PHYSICS LETTERS,2014,第11作者
（30）Photocurrent spectrum study of a quantum dot single-photon detectorbased on resonant tunneling effect with near-infrared response ,APPLIED PHYSICS LETTERS,2014,第11作者
（31）Optical spin polarization and Hanle effect in GaAsSb: Temperature dependence ,APPLIED PHYSICS LETTERS,2014,第3作者
（32）Photoluminescence of the single wurtzite GaAs nanowire with different powers and temperatures, Journal Of Luminescence,2014,第11作者
（33）Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors,Acs Nano,2014,第11作者
（34）Raman mapping of laser-induced changes and ablation of InAs nanowires,Applied Physics A,2014,第2作者
（35）Structure and Quality controlled growth of inAs Nanowires through Catalyst engineering ,Nano Research,2014,第4作者
（36）Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy,Applied Physics Letters,2014,第11作者
（37）High-Polarization-Discriminating Infrared Detection Using a Single Quantum Well Sandwiched in Plasmonic Micro-Cavity ,SCIENTIFIC REPORTS,2014,第11作者
（38）Far infrared reflection spectra of InAsxSb1？x (x=0-0.4) thin films,J. Appl. Phys,2013,第3作者
（39）Impact of growth parameters on the morphology and microstructureof epitaxial of GaAs nanowires grown by molecular beam epitaxy ,Journal of Alloys and Compounds,2013,第11作者
（40）Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy ,Appl. Phys. Lett. ,2013,第11作者
（41）Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.,ACS Nano,2012,第11作者
（42）Laser induced modification and ablation of InAs nanowires ,JOURNAL OF APPLIED PHYSICS ,2012,第2作者
（43）Weak field magnetoresistance of narrow-gap semiconductor InSb,JOURNAL OF APPLIED PHYSICS,2011,第11作者
（44）Temperature-Dependent Optical Properties of InAs/GaAs Self-Assembled Quantum Dots: Spectroscopic Measurements and an Eight-Band Study ,CHINESE PHYSICS LETTERS ,2011,第2作者
（45）The effects of growth parameters on the RF-MBE growth of dilute InNSb films,JOURNAL OF PHYSICS D: APPLIED PHYSICS,2010,第11作者
（46）Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy,Acta Materialia,2007,第3作者
（47）Effects of rapid thermal annealing on the properties of GaNxAs1x,JOURNAL OF APPLIED PHYSICS,2007,第11作者
（48）Optical properties of InN films grown by molecular beam epitaxy at different conditions,Thin Solid Films,2006,第1作者
（49）Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well,Journal of Crystal Growth,2006,第2作者
（50）MBE growth and properties of InN-based dilute magnetic semiconductors,Journal of Crystal Growth,2004,第1作者
（51）InMnN: a nitride-based diluted magnetic semiconductor,Solid State Communications,2004,第1作者
（52）MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties,Journal of Crystal Growth,2003,第1作者

发表著作

科研活动
科研项目（ 1 ） 小量子体系光-电量子态互作用及其调控, 参与,国家级,2011-01--2015-12
（ 2 ） 高质量InSb纳米线的分子束外延生长，微结构及输运特性研究, 主持,国家级,2014-01--2017-12
（ 3 ） 量子点操控的单光子探测和圆偏振单光子发射, 参与,国家级,2014-01--2017-12
（ 4 ） 人造拓扑超导体与Majorana费米子的研究, 参与,国家级,2017-01--2020-12
（ 5 ） 低维半导体异质结构光电探测材料及器件验证研究, 参与,国家级,2016-10--2020-12

参与会议

合作情况
项目协作单位

指导学生