基本信息
赵德刚男博导中国科学院半导体研究所
电子邮件： dgzhao@red.semi.ac.cn
通信地址： 北京市清华东路甲35号光电子研发中心
邮政编码： 100083
部门/实验室：光电子研究发展中心
研究领域

招生信息
招生专业080903-微电子学与固体电子学

招生方向半导体光电子材料与器件


教育背景1997-09--2000-06中国科学院半导体研究所博士
1994-09--1997-04电子科技大学硕士
1990-09--1994-06电子科技大学学士

学历
学位

工作经历
工作简历2000-07~现在,中国科学院半导体研究所,研究员
1997-09~2000-06,中国科学院半导体研究所,博士
1994-09~1997-04,电子科技大学,硕士
1990-09~1994-06,电子科技大学,学士

社会兼职2011-01-01-今,中国电子学会高级会员,


教授课程宽禁带半导体光电子材料与器件


专利与奖励
奖励信息（1） 科技部创新人才推进计划-中青年科技创新领军人才, 部委级, 2018
（2） 享受国务院政府特殊津贴, , 其他, 2018
（3） 国家百千万人才工程, 部委级, 2017
（4） 中国青年科技奖, 部委级, 2011

专利成果（ 1 ） 测量肖特基势垒高度的装置和方法, 2012, 第 2 作者, 专利号: Z8.2
（ 2 ） InGaN太阳能电池及其制作方法, 2012, 第 2 作者, 专利号: 8.2
（ 3 ） 氮化镓基雪崩型探测器及其制作方法, 2012, 第 2 作者, 专利号: ZL.3.1
（ 4 ） 一种测量直接带隙半导体材料禁带宽度的装置和方法, 2012, 第 2 作者, 专利号: Z4.0
（ 5 ） 一种紫外红外双色探测器及制作方法, 2012, 第 2 作者, 专利号: ZL.3.6
（ 6 ） 一种激光器及其制作方法, 2014, 第 2 作者, 专利号: 5.8
（ 7 ） 同时降低发散角和阈值电流的激光器的制备方法, 2014, 第 2 作者, 专利号: 4.0
（ 8 ） 抑制GaAs基激光器高阶模的方法, 2014, 第 2 作者, 专利号: 9.1
（ 9 ） 高密度高均匀InGaN量子点结构及生长方法, 2014, 第 2 作者, 专利号: 7.7
（ 10 ） 绿光LED外延层结构及生长方法, 2014, 第 2 作者, 专利号: 6.5
（ 11 ） 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池, 2014, 第 2 作者, 专利号: 3.7
（ 12 ） 低电阻率低温P型铝镓氮材料的制备方法, 2014, 第 2 作者, 专利号: 9.8
（ 13 ） 一种具有平面型发射阴极的纳米真空三极管及其制作方法, 2014, 第 2 作者, 专利号: 0.8
（ 14 ） 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法, 2014, 第 2 作者, 专利号: 5.1
（ 15 ） InGaN量子点的外延结构及生长方法, 2014, 第 2 作者, 专利号: 3.7
（ 16 ） 测量肖特基势垒高度的装置和方法, 2014, 第 2 作者, 专利号: ZL. 8.2
（ 17 ） 降低电子泄漏的砷化镓激光器的制作方法, 2014, 第 2 作者, 专利号: 5.5
（ 18 ） 制备低比接触电阻率的p-GaN欧姆接触的方法, 2014, 第 2 作者, 专利号: 4.9
（ 19 ） 降低Ni/Au与p-GaN欧姆接触的比接触电阻率的方法, 2014, 第 2 作者, 专利号: 0.1
（ 20 ） InGaN/AlInGaN多量子阱太阳能电池结构, 2014, 第 2 作者, 专利号: 7.4
（ 21 ） 高电阻低位错GaN薄膜及制备方法, 2014, 第 2 作者, 专利号: 7.1
（ 22 ） InGaN太阳能电池及其制作方法, 2015, 第 2 作者, 专利号: ZL. 8.2
（ 23 ） AlxGa1-xN基紫外探测器及制备方法, 2015, 第 2 作者, 专利号: 3.2
（ 24 ） 绿光LED芯片外延层的结构及生长方法, 2015, 第 2 作者, 专利号: 2.4
（ 25 ） 基于二维岛的InGaN量子点外延结构及制备方法, 2015, 第 2 作者, 专利号: 9.4
（ 26 ） InGaN量子点的外延结构及生长方法, 2017, 第 2 作者, 专利号: CNB
（ 27 ） 绿光LED外延层结构及生长方法, 2017, 第 2 作者, 专利号: CNB
（ 28 ） 高密度高均匀InGaN量子点结构及生长方法, 2017, 第 2 作者, 专利号: CNB
（ 29 ） 减小GaN基蓝紫光端发射激光器电子泄漏的方法, 2017, 第 2 作者, 专利号: CNB
（ 30 ） 低电阻率低温P型铝镓氮材料的制备方法, 2017, 第 2 作者, 专利号: CNB
（ 31 ） 一种GaN基紫外激光器结构及制备方法, 2017, 第 2 作者, 专利号: 3.3


出版信息
发表论文（1）Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes,Applied Physics B: Lasers and Optics,2019-11,第11作者
（2）Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells,Optical Materials Express,2019-09,第11作者
（3）Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process,Nanoscale Research Letters,2019-08,第11作者
（4）Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes,Superlattices and Microstructures,2019-07,第11作者
（5）Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers,Journal of Alloys and Compounds,2019-07,第11作者
（6）Suppression of optical feld leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide,Superlattices and Microstructures,2019-06,第11作者
（7）Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells,Materiasl Resarch Express,2019-04,第11作者
（8）Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics,Journal of Alloys and Compounds,2019-03,第11作者
（9）Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence,Nanoscale Research Letters,2019-03,第11作者
（10）Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h,Journal of Semiconductors,2019-02,第11作者
（11）The compensation role of deep defects in the electric properties of lightly Si-doped GaN,Journal of Alloys and Compounds,2019-01,第11作者
（12）Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer,Optics and Laser Technology,2019-01,第11作者
（13）Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN,Nanomaterials,2018-12,第11作者
（14）Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures,Chinese Physics B,2018-11,第11作者
（15）Carbon-related defects as a source for the enhancement of yellow luminescence of unintentionally doped GaN,Nanomaterials,2018-09,第11作者
（16）Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells,Optics Express,2018-08,第11作者
（17）Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers,IEEE Photonics Journal,2018-08,第11作者
（18）Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity,AIP Advances,2018-08,第11作者
（19）Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations,Optical Materials,2018-08,第11作者
（20）Deep levels induced optical memory effect in thin InGaN film,AIP Advances,2018-08,第11作者
（21）Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide,Japanese Journal of Applied Physics,2018-06,第11作者
（22）Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption,Applied Surface Science,2018-05,第11作者
（23）The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells,Superlattices and Microstructures,2018-03,第11作者
（24）Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,Optics Express,2018-02,第11作者
（25）Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer,Superlattices and Microstructures,2018-02,第11作者
（26）Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells,Materials Research Express,2018-02,第11作者
（27）Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x≤ 0.104),Superlattices and Microstructures,2018-02,第11作者
（28）Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide,Journal of Alloys and Compounds,2018-01,第11作者
（29）Influence of In doping in GaN barriers on luminescence properties of InGaN / GaN multiple quantum well LEDs,Superlattices and Microstructures,2018-01,第11作者
（30）Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms,Superlattices and Microstructures,2018-01,第11作者
（31）Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes,Chinese Physics B,2018-01,第11作者
（32）Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide,Chinese Physics B,2018-01,第11作者
（33）Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer,Journal of Crystal Growth,2017,第11作者
（34）Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes,IEEE Photonics Journal,2017,第11作者
（35）Different annealing temperature suitable for different Mg doped P-GaN,Superlattices and Microstructures,2017,第11作者
（36）Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD,Materials Technology,2017,第11作者
（37）Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold,Applied Optics,2017,第11作者
（38）Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes,AIP Advances,2017,第11作者
（39）Performance Improvement of GaN-Based Violet Laser Diodes,Chinese Physics Letters,2017,第1作者
（40）Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3,Superlattices and Microstructures,2017,第11作者
（41）Suppression of optical field leakage to GaN substrate in GaN-based green laser diode,Superlattices and Microstructures,2017,第11作者
（42）Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes,Scientific Reports,2017,第11作者
（43）Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region,Optics Express,2017,第11作者
（44）Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,Journal of Semiconductors,2017,第1作者
（45）Analysis of localization effect in blue-violet light mitting InGaN/GaN multiple quantum wells with different well widths,Chinese Physics B,2017,第11作者
（46）Different influence of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes,Chinese Physics B,2017,第11作者
（47）Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide,Chinese Physics B,2017,第11作者
（48）The residual C concentration control for low temperature growth p-type GaN,Chinese Physics B,2017,第11作者
（49）New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode,Optics and Laser Technology,2017,第11作者
（50）Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes,Physica Status Solidi A,2017,第11作者
（51）Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination,Journal of Alloys and Compounds,2017,第11作者
（52）Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells,IEEE Journal of Photovoltaics,2017,第11作者
（53）Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials,Chinese Physics B,2017,第11作者
（54）Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact,Applied Optics,2017,第11作者
（55）Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement,Materials Research Express,2017,第11作者
（56）Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors,J. Vac. Sci. Technol. B,2016,第11作者
（57）Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes,J. Vac. Sci. Technol. B,2016,第11作者
（58）GaN high electron mobility transistors with AlInN back barriers,Journal of Alloys and Compounds,2016,第11作者
（59）Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure,Journal of Alloys and Compounds,2016,第11作者
（60）Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity,IEEE Journal of Photovoltaics,2016,第11作者
（61）The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes,AIP Advances,2016,第11作者
（62）The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content,Phys. Status Solidi A,2016,第11作者
（63）Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses,Vaccum,2016,第11作者
（64）Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs,Journal of Alloys and Compounds,2016,第11作者
（65）Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes,Chinese Optics Letters,2016,第11作者
（66）Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well lightemitting diodes,Superlattices and Microstructures,2016,第11作者
（67）Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC,Chinese Physics B,2016,第11作者
（68）Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes,Optics Express,2016,第11作者
（69）Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films,Chinese Physics B,2016,第11作者
（70）Comparative study of the differential resistance of GaAs- and GaN-based laser diodes,Journal of Vacuum Science & Technology B,2016,第11作者
（71）Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC,Chemical Physics Letters,2016,第11作者
（72）Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode,Journal of Vacuum Science & Technology B,2016,第11作者
（73）Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes,Journal of Physics D: Applied Physics,2016,第11作者
（74）Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells,Superlattices and Microstructures,2016,第11作者
（75）XPS study of impurities in Si-doped AlN film,Surface and Interface Analysis,2016,第11作者
（76）Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD,Applied Physics A-Materials Science & Processing,2016,第11作者
（77）Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers,Journal of Alloys and Compounds,2015,第11作者
（78）Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage,Chinese Physics B,2015,第11作者
（79）Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode,Chinese Physics B,2015,第11作者
（80）Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate,Chinese Physics B,2015,第11作者
（81）Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer,Chinese Physics B,2015,第11作者
（82）Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN,Chinese Physics B,2015,第11作者
（83）Growth condition optimizaiton and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure,Chinese Physics B,2015,第11作者
（84）Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and derivation of its sheet density expression,Chinese Physics B,2015,第11作者
（85）Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage,Chinese Physics B,2015,第11作者
（86）Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers,Journal of Alloys and Compounds,2015,第11作者
（87）Effect of localization states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells,Journal of Vacuum Science & Technology A,2015,第11作者
（88）Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells,Optics Express,2015,第11作者
（89）Differential resistance of GaN-based laser diodes with and without polarization effect,Applied Optics,2015,第11作者
（90）The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters,Superlattices and Microstructures,2015,第11作者
（91）The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes,Physica Status Solidi A,2015,第11作者
（92）Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films,J. Vac. Sci. Technol. A,2015,第11作者
（93）Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness,Journal of Alloys and Compounds,2015,第11作者
（94）Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness,Journal of Applied Physics,2015,第11作者
（95）Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes,J. Vac. Sci. Technol. B ,2015,第11作者
（96）A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current,Superlattice and Microstructure,2015,第11作者
（97）The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN,Journal of Applied Physics,2014,第11作者
（98）Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition,J. Vac. Sci. Technol. B,2014,第11作者
（99）Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells,J. Vac. Sci. Technol. A,2014,第11作者
（100）Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes,Chinese Physics B,2014,第11作者
（101）Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells,Chinese Physics B,2014,第11作者
（102）Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films,Journal of Applied Phyics,2014,第11作者
（103）Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes,Optics Express,2014,第11作者
（104）Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors,J. Vac. Sci. Technol. B,2014,第11作者
（105）Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells,Phys. Status Solidi A,2014,第11作者
（106）Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition,Thin Solid Films,2014,第11作者
（107）Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN,Semiconductor Science and Technology,2013,第11作者
（108）Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness,Journal of Applied Physics,2013,第11作者
（109）High Power InGaN-based Blue-Violet Laser Diode Array with Broad-area Stripe,Chinese Physics Letters,2013,第11作者
（110）The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells,Chinese Physics Letters,2013,第11作者
（111）The effects of InGaN layer thickness on the performance of InGaN/GaN p–i–n solar cells,Chinese Physics B,2013,第11作者
（112）Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime,Chinese Physics B,2013,第11作者
（113）Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN,物理学报,2013,第11作者
（114）Influence of growth condicitons on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition,物理学报,2013,第11作者
（115）Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition,Journal of Alloys and Compounds,2012,第1作者
（116）Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire,Journal of Alloys and Compounds,2012,第1作者
（117）Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes,Applied Physics Letters,2012,第11作者
（118）Effect of light Si-doping on the near-band-edge emissions in high quality GaN,Journal of Applied Physics,2012,第11作者
（119）Distribution of electric field and design of devices in GaN avalanche photodiodes,Science in China ,2012,第11作者
（120）Positive and negative effects of oxygen in thermal annealing of p-type GaN,Semiconductor Science and Technology,2012,第11作者
（121）Quadratic electro-optic effect in GaN-based materials,Applied Physics Letters,2012,第2作者
（122）Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer,Journal of Applied Physics,2012,第11作者
（123）Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition,Journal of Alloys and Compounds,2011,第11作者
（124）A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector,Journal of Applied Physics,2011,第1作者
（125）An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells,Journal of Alloys and Compounds ,2010,第1作者
（126）Hole concentration test of p-type GaN by analyzing the spectral response of p-n+ structure GaN ultraviolet photodetector ,Journal of Alloys and Compounds ,2010,第1作者
（127）Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors,Chinese Physics B,2010,第1作者
（128）Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector,Acta Physica Sinica,2010,第11作者
（129）Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films,Applied Physics Letters,2009,第1作者
（130）Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition,Journal of Alloys and Compounds,2009,第1作者
（131）An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors,Chinese Physics Letters,2009,第1作者
（132）Stable multiplication gain in GaN p-i-n avalanche photodiodes with larger device area,Journal of Physics D: Applied Physics,2009,第11作者
（133）Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector,Acta Physica Sinica,2009,第11作者
（134）A GaN photodetector integrated structure for wavelength characterization of ultraviolet light,Semiconductor Science and Technology,2008,第1作者
（135）Al composition variations in AlGaN films grown on low temperature GaN buffer layer by metalorganic chemical vapor deposition,Journal of Crystal Growth,2008,第1作者
（136）Effect of interface roughness and dislocation density on the electroluminescence intensity of InGaN multiple quantum wells,Chinese Physics Letters,2008,第1作者
（137）Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector,Semiconductor Science and Technology,2008,第11作者
（138）Influence of defects in n—-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors,Applied Physics Letters,2007,第1作者
（139）Influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer,Journal of Crystal Growth,2007,第1作者
（140）Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN ,Journal of Applied Physics,2007,第1作者
（141）Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films,Applied Physics Letters,2006,第1作者
（142）Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films,Applied Physics Letters,2006,第1作者
（143）Role of edge dislocation in enhancing the yellow luminescence of n-type GaN ,Applied Physics Letters,2006,第1作者
（144）Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition,Journal of Crystal Growth,2006,第1作者
（145）Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition,Applied Surface Science,2006,第1作者

发表著作（ 1 ） 《先进焦平面技术导论》第四章,Introduction to Advanced Focal Plane Arrays,国防工业出版社,2011-01,第1作者
（ 2 ） 《光电二极管》第十四章,Photodiodes - World Activities in 2011,Intech-Open Access Publisher,2011-08,第1作者


科研活动
科研项目（ 1 ） GaN基光电子材料与器件的基础问题, 主持,国家级,2010-01--2013-12
（ 2 ） 太阳盲GaN基紫外探测器阵列, 主持,国家级,2007-12--2010-10
（ 3 ） 位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理, 主持,国家级,2008-01--2010-12
（ 4 ） 纳米微结构InGaN太阳能电池的MOCVD生长与器件技术, 主持,国家级,2011-01--2014-12
（ 5 ） 针对绿色激光器的InGaN量子点生长与性能调控, 主持,国家级,2014-01--2017-12
（ 6 ） GaN基光电子材料与器件, 主持,部委级,2015-01--2017-12
（ 7 ） AlGaN基紫外双色探测器, 主持,国家级,2016-01--2019-12
（ 8 ） 面向激光显示的三基色半导体激光器（LD）关键材料与技术基础研究, 主持,国家级,2016-07--2020-12
（ 9 ） AlGaN材料快陥凋控及日盲紫外雪崩探測器研究, 主持,部委级,2016-01--2020-12
（ 10 ） GaN同质衬底上量子阱外延生长及p型掺杂技术研究, 主持,国家级,2016-01--2020-12
（ 11 ） GaN基绿光激光器芯片研制, 主持,省级,2016-07--2019-12

参与会议（1）GaN基材料与激光器第三届全国宽禁带半导体学术会议2019-10-17
（2）GaN基材料与激光器第三届微纳光学技术与应用交流会2019-09-20
（3）GaN基材料与光电子器件中国材料大会2019-07-13
（4）GaN基材料与紫外光光电子器件第六届海峡两岸宽能隙半导体会议2018-10-26
（5）GaN基光电子材料与器件第十五届全国MOCVD学术会议2018-08-22
（6）GaN基材料与激光器全国第18次光纤通信暨第19届集成光学学术大会2018-07-14
（7）GaN基材料生长与器件技术第十三届全国激光技术与光电子学学术会议2018-03-10
（8）GaN基材料与器件技术2017年第二届宽禁带半导体会议 2017-08-10
（9）GaN基材料技术与器件物理2017年第21届全国半导体物理会议 2017-07-18
（10）GaN基光电子材料与器件2017年第十二届激光技术与光电子学会议 2017-03-14
（11）GaN基材料技术与器件物理第十四届全国MOCVD会议赵德刚2016-08-16
（12）GaN基材料生长与器件技术第一届全国宽禁带半导体学术及应用技术会议赵德刚2015-10-30
（13）GaN基光电子材料与器件第十四届全国固体薄膜学术会议赵德刚2015-07-29
（14）GaN基光电子材料与器件第六届全国信息光学与光子学学术会议赵德刚2014-07-22
（15）GaN基材料生长与光电子器件第十三届全国MOCVD会议赵德刚2014-05-06


合作情况
项目协作单位

指导学生