姓名：郭耀
所在学科：物理
职称：特别副研究员
联系电话： +86-**
E-mail：yaoguo @ bit.edu.cn
通信地址：北京市房山区北京理工大学，理学楼206

个人简历 2006-2010年 北京科技大学材料科学与工程学院，学士；
2010-2015年 北京大学信息科学技术学院，博士；

工作经历 助理教授，北京理工大学物理学院，中国，2017年-至今
访问，斯坦福大学电子工程系，美国，2016-2017
研究助理，香港理工大学应用物理系，香港，2015-2016

科研方向 二维材料与电子器件

学术成就 【1】Y Guo; W. Zhang; H. Wu; J. Han; Y. Zhang; S. Lin; C. Liu; K. Xu; J. Qiao; W. Ji; Q. Chen; S. Gao; W. Zhang; X. Zhang and Y. Chai, Discovering the Forbidden Raman Modes at the Edges of Layered Materials, Science Advances , 2018.4,(12): 6252
【2】Y. Guo, C. Liu, Q. Yin, C. Wei, S. Lin, T. Hoffman, Y. Zhao, J. H. Edgar, Q. Chen, S. P. Lau, J. Dai, H. Yao, H.-S. P. Wong, Y. Chai^(*), Distinctive In-Plane Cleavage Behaviors of Two-Dimensional Layered Materials, ACS Nano, 10, 8980, (2016) ACS Editors’ Choice
【3】Y. Guo, Y. X. Han, J. P. Li, A. Xiang ,X. L. Wei, S. Gao, Q. Chen^(*). Study on Contact Resistance Distribution at the Contact between Molybdenum Disulfide and Metals. ACS Nano, 8, 7771, (2014).
【4】Y. Guo, X. L. Wei, J. P. Shu, B. Liu; J. B. Yin; C. R. Guan, Y. X. Han, S. Gao, Q. Chen^(*). Charge Trapping at the MoS2-SiO2 Interface and its Effects on the Characteristics of MoS2 Metal-Oxide-Semiconductor Field Effect Transistors. Appl. Phys. Lett., 106, 103109, (2015).
【5】Y. Guo^(#), J. B. Yin^(#), X. L. Wei, Z. J. Tan, J. P. Shu, B. Liu, Y. Zeng, S. Gao, H. L. Peng^(*), Z. F. Liu^(*), Q. Chen^(*). Edge States Induced Severe Disruption to the Band Alignment of the Thickness Modulated molybdenum sulfide junctions. Advance Electronic Materials, , (2016)
【6】Q. Q. Ji, M. Kan, Y. Zhang, Y. Guo, D. L. Ma, J. P. Shi, Q. Sun, Q. Chen, Y. F. Zhang^(*), Z. F. Liu^(*). Unravelling Orientation Distribution and Merging Behavior of Monolayer MoS2 Domains on Sapphire. Nano Lett., 15, 198, (2015).
【7】C. Y. Zhang, Z. Y. Ning, Y. Liu, T. T. Xu, Y. Guo, A. Zak, Z. Y. Zhang, W. Sheng, R. Tenne, Q. Chen^(*). Electrical transport properties of individual WS₂ nanotubes and their dependence on water and oxygen absorption. Appl. Phys. Lett., 101, 113112, (2012).
【8】Z. Y. Ning, T. W. Shi, M. Q. Fu, Y. Guo, X. L. Wei, S. Gao, Q. Chen^(*). Transversally and Axially Tunable Carbon Nanotube Resonators in Situ Fabricated and Studied Inside a Scanning Electron Microscope. Nano Lett., 14, 1221, (2014).
【9】Z. Y. Ning, M. Q. Fu, T. W. Shi, Y. Guo, X. L. Wei, S. Gao, Q. Chen^(*). In-situ Multi- properties Measurements of the Same Individual Nanomaterials in SEM and Correlation with Their Atomic Structure. Nanotechnology, 25, 275703, (2014).
【10】T. S. Shi, M. Q. Fu, D. Pan, Y. Guo, J. H. Zhao, Q. Chen^(*). Contact Properties of Field- effect Transistors Based on Indium Arsenide Nanowires Thinner than 16 nm. Nanotechnology, 26, 175202, (2015).
【11】Y. X. Han, X. Zheng, M. Q. Fu, D. Pan, X. Li, Y. Guo, J. H. Zhao, Q. Chen^(*). Negative photoconductivity of InAs nanowire. Phys. Chem. Chem. Phys., 18, 818-826, 2016.
【12】J. P. Shu, G. T. Wu, Y. Guo, B. Liu, X. L. Wei, Q. Chen^(*). The Intrinsic Origin of the Hysteresis in the MoS2 Field Effect Transistors. Nanoscale, 8, 3049-3056, 2016.
【13】Y. Guo, Q. Chen. Study on the contact between MoS₂ and metals, MRS Spring Meeting (presentation), San Francisco, California, US. Apr. 6~10, (2015).

Yao Guo Office: Room 206, Natural Science Building, Beijing Institute of Technology, Fangshan, Beijing, China, 102488
　　Tel: +86-**
　　E-mail: yaoguo@bit.edu.cn
　　Yao Guo is an Assistant Professor in School of Physics. The group welcome self-motivated students from different background, belief, and culture. From September 2010 to June 2015, he studied in the Department of Electronics, Peking University and obtained his Ph.D. From September 2015 to September 2017, he worked as associate researcher in a joint program between the Hong Kong Polytechnic University and Stanford University. Starting from September 2017, he is an Asistant Professor in School of Physics at Beijing Institute of Technology. His major interests are the experimental researches on micro-nano scale materials and devices. He has published papers in scientific journals including Science Advances, ACS Nano, Nano Lett. etc.