吕伟锋，博士，副教授，浙江大学电路与系统专业博士，美国德州大学奥斯汀分校访问****，中国电子学会会员。主要从事纳米CMOS电路及CAD、新型集成纳米器件，超低功耗器件与电路，面向DFM的统计设计方法等方面的研究。作为负责人主持国家自然科学基金面上项目2项、浙江省自然科学基金一般项目1项，浙江省教育厅项目1项。作为科研骨干参与国家自然科学基金和浙江省自然科学基金多项，具有较丰富的教学科研经历和学术背景。近年来在国内外期刊和国际会议上发表论文约40篇，其中被SCI收录近20篇，EI收录10余篇，获得浙江省高等学校科研成果奖1项。主编教材1部，合著出版教材5部。被邀请担任国际上10多个SCI、EI收录期刊审稿人。
近三年代表性论文：
[1] Tianyu Yu , Weifeng Lü, Zhifeng, Zhao, Peng Si, Kai Zhang. Negative Drain-Induced Barrier Lowering and Negative Differential Resistance Effects in Negative-Capacitance Transistors, Microelectronics Journal, 2021,108(2):104981.
[2] Tianyu Yu, Weifeng Lü, Zhifeng, Zhao, Peng Si, Kai Zhang. Effect of Different Capacitance Matching on Negative Capacitance FDSOI Transistors,Microelectronics Journal, 2020, 98(4):104730.
[3] Liang Dai, Wei-Feng Lü, Mi Lin. Effects of Work-function Variation on Performance of Junctionless and Inversion-Mode Dual-Metal Gate Nanowire Transistors, Journal of semiconductor technology and science, 2020, 20(4): 349-356.
[4] Liang Dai, Wei-Feng Lü. Degeneration of Line-edge Roughness-induced Variability for Dual-metal Gate Fin Field-effect Transistors, Journal of Nanoelectronics and Optoelectronics, 2020,15(1):142-146.
[5] Peng Si, Kai Zhang, Tianyu Yu, Zhifeng, Zhao,Weifeng Lü. Analog / RF Performance Analysis of Nanometer Negative Capacitance FDSOI Transistors, InfMIDEM,2020,50(1):47-53.
[6]Wei-Feng Lü, Liang Dai, Zhifeng Zhao, Mi Lin.Performance Improvements of Random Dopant Fluctuation-Induced Variability in Negative Capacitance MOSFETS, Fluctuation and Noise Letters, 2020,19(1):**.
[7] Kai Zhang, Weifeng Lü, Peng Si, Zhifeng, Zhao, Tianyu Yu. Performance improvement of timing and power variations due to random dopant fluctuation in negative-capacitance CMOS inverters, IET Circuits, Devices & Systems, 2020,14(6):908-914.
[8]Zhifeng Zhao, Tianyu Yu, Peng Si, Kai Zhang, Weifeng Lü.Superior Performance of a Negative-capacitance Double-gate Junctionless Field-effect Transistor with Additional Source-drain Doping,InfMIDEM,2020,50(3):169-177.
[9] WeifengLü, and Liang Dai. Impact of work-function variation on analog figures-of-merits for high-k/metal-gate junctionlessFinFET and gate-all-around nanowire MOSFET,Microelectronics Journal, 2019, 84(2):54-58.
[10] LiangDai, and Weifeng Lü. Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs,Electronics, 2019, 8(3):282.
[11]Wei-Feng Lü, Liang Dai, Guang-Yi Wang, and Mi Lin. Impact of Correlation on Gate Capacitance Variability Due to Random DopantFluctuation and Work-Function Variation in Nanometer Metal-Oxide-Semiconductor-Field-Effect-Transistors, J. Nanoelectron. Optoelectron.2019, 14(7)1037–1041.
联系方式：lvwf@hdu.edu.cn