赵金石简介

姓名赵金石
性别
男
出生年月
1974年6月
学历学位
研究生 博士
职 称教授所属学院
电子信息工程学院是否博硕导硕导
联系电话**E_mail
jinshi58@163.com
所属学科080903 微电子学与固体电子学研究方向
存储器开发与性能改善(DRAM, FRAM, PRAM,RRAM), high-k薄膜工艺技术及测试
人才称号

学术兼职韩国首尔大学兼职教授

讲授课程敏感材料和新型存储器, 半导体物理，最新半导体存储器件

主要科研项目及代表性成果(包括鉴定项目、论文、专著、获奖、专利等)：

　　 项目:



1. “基于两种不同导电机理的多值阻变存储器研究”，天津市自然科学基金重点项目（14JCIDJC1500），2014-04~2017.03，第一负责人

2. 唐邦科技公司, 2011.06~2012.05, 第一负责人.

3. 大学学生创新性实验, 2010.10~2011.09, 第一负责人.

4. 校科研启动基金, 2010.3~2012.2, 第一负责人.

5. 韩国三星电子，2001.03~2002.02， 第二负责人.

6. 韩国科技部，2002.12~2005.05. 第二负责人.



论文:

1. Xing Long Shao, Li Wei Zhou, Kyung Jean Yoon, Hao Jiang, Jin Shi Zhao*, Kai Liang Zhang, Sijung Yoo, and Cheol Seong Hwang, “Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory”, Nanoscale, 7, 11063 – 11074, 2015.

2. Liwei Zhou , Xing Long Shao , Xiang Yuan Li , Hao Jiang , Chen Ran , Kyung Jean Yoon , Hae Jin Kim , Kailiang zhang , Jin Shi Zhao* , Cheol Seong Hwang, “Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure”, ",Appl. Phys. Lett. 107, 072901-3, 2015.

3. Li Wei Zhou, Xing Long Shao, Chang Jun Chen, Hao Jiang, Jian Yun. Wang, Ran Chen, Qing Meng Zong, Jin Shi Zhao* and Lian Rong Lv, “Electroforming-Free and Multilevel Resistance switching Properties in Al/TiOx/Cu Structure”, ECS Solid State Letters, 4 (1) P8-P11, 2015

4. Ran Chen, Liwei Zhou, Jianyun Wang, Changjun Chen, Xinglong Shao, Jiang Hao, Kailiang Zhang, Lianrong Lv, Jinshi Zhao*,“A study of multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure”, Acta Phys.Sin., 63(6), 2014.

5. Shao X L, Jin Shi Zhao, Zhang K L, Chen R, Sun K, Chen C J, Liu K, Zhou L W, Wang J Y, Ma C M, Yoon K J, Hwang C S 2013 ACS Appl. Mater. Interfaces, 5(21): 11265-11270, 2013.

6. Xinglong Shao, Jin Shi Zhao, Kailiang Zhang, Ran Chen, Liwei Zhou, Changjun Chen,Jianyun Wang, “Resistance Switching Properties of Titanium Oxide with different Copper Electrode Structure”, ECS Transactions, 52 (1) 973-978 , 2013.

7. Kailiang Zhang, Kai Liu, Fang Wang, Fuhong Yi, Xiaoying Wei, Jin Shi Zhao, “Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory”, CHINESE PHYSICS B, 22(9):097101, 2013.

8. Xiaoying Wei, Ming Hu, Kailiang Zhang, Fang Wang and Jin Shi Zhao, Yinping Miao, “Analysis of resistive switching behaviors of vanadium oxide thin film”, CHINESE PHYSICS B, 22(3):037201, 2013.

9. Kai Liu, Kailiang Zhang, Fang Wang, Jin Shi Zhao, Jun Wei, “Simulation study of dimensional effect on bipolar resistive random access memory (RRAM)”, Proceedings of the 2013 IEEE International Nanoelectronics Conference (INEC), 306-8, 2013.

10. Wenxiang Sun, Kailiang Zhang, Fang Wang, Kuo Sun, Yinping Miao, Jin Shi Zhao, “Resistive switching characteristics of zinc oxide resistive RAM doped with nickel”, ECS Transactions, 52(1):1009-1014, 2013.

11. Tao Lu, Kailiang Zhang, Fang Wang, Kuo Sun, Wenxiang Sun, Jin Shi Zhao, “Electrical properties and conduction mechanism of RRAM with Al/WOX/Cu structure”, ECS Transactions, 52(1):1003-1008, 2013.

12. Changqiang Wu, Kailiang Zhang, Fang Wang, Xiaoying Wei, and Jin Shi Zhao，Resistance Switching Characteristics of Sputtered Titanium Oxide on a Flexible Substrate Design and Device Engineering，ECS Trans. , 44(1): 87-91, 2012.

13. Kai Liu, Kailiang Zhang, Fang Wang, and Jin Shi Zhao，Simulation of Electrochemical Metallization RRAM by Kinetic Monte Carlo Method, ECS Trans. , 44(1): 93-98, 2012.

14. Fang Wang, Baohe Yang, Yinzhao Hao, Kailiang Zhang and Jin Shi Zhao, Texture and Electric Properties of BN Films Deposited on Different Electrodes by RF Magnetron Sputtering Thin Film Technology, ECS Trans. , 44(1): 493-497, 2012.

15. Xiaoying Wei, Ming Hu, Kailiang Zhang, Fang Wang and Jin Shi Zhao, Resistive Switching Characteristics of VOX Thin Films Deposited onto Cu Buffer Layer Thin Film Technology, ECS Trans. , 44(1): 445-450, 2012.

16. E. Rite, Kailiang Zhang, Fang Wang, Xiaoying Wei, Kai Liu and Jin Shi Zhao, Research of Bilayer Stacked Resistance Switching Memory Structure Based on Pt/NiO/TiO2/Pt Emerging Semiconductor Technologies, ECS Trans. , 44(1): 1221-1226, 2012.

17. Yang Zhang, Kailiang Zhang, Fang Wang, Xiaoying Wei, and Jin Shi Zhao, Effect of film thickness on resistance switching characteristics for Cu/NiO/Pt structure, ECS Trans.，34（1）：541~546, 2011.

18. 张楷亮，韦晓莹，王芳，武长强，赵金石，氧化钒薄膜的制备及电致开关特性的研究，光电子.激光，22（5）：656~659, 2011.

19. Kyung Min Kim, Seul Ji Song, Gun Hwan Kim, Joon Young Seok, Min Hwan Lee, Jin Shi Zhao, and Cheol Seong Hwang, "Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO2 Thin Film", Electrochem. Solid-St. Lett., 13(6), G51-G53, 2010.

20. Hong Sik Yoon, In-Gyu Baek, Jin Shi Zhao, Hyunjun Sim, Min Young Park, Hansin Lee, Gyu-Hwan Oh, Jong Chan Shin, In-Seok Yeo, and U-In Chung, "Vertical Cross-point Resistance Change Memory for Ultra-High Density Non-volatile Memory Applications", VLSI Technology，p.26-27，2009.

21. Jin Shi Zhao, Hyun Ju Lee, Joon Seop Sim, Keun Lee, and Cheol Seong Hwang*, "Ferroelelctric and reliability properties of metal-organic chemical vapor deposited Pb(Zr0.15Ti0.85)O3 thin films grown in the self-regulation process window", Appl. Phys. Lett,，88,172904-172906, 2006.

22. Jin Shi Zhao, Joon Seop Sim, Hyun Ju Lee, Dong-Yeon Park, and , Cheol Seong Hwang*, "Investigation of the Deposition Behavior of a Lead Oxide Thin Film on Ir Substrates by Liquid Delivery Metallorganic Chemical Vapor Deposition", Electrochemical and Solid-State Letters,，9 (2), C29-C31, 2006.

23. Jin Shi Zhao, Hyun Ju Lee, Keun Lee, Joon Seop Sim, and Cheol Seong Hwang*, "Influence of the Pt Top Electrode Annealing Procedure on the Ferroelectric Property of MOCVD Pb(Zr0.2Ti0.8)O3 Thin Films", Electrochemical and Solid-State Letters,，9 (7), F69-F72, 2006.

24. Jin Shi Zhao, Joon Seop Sim, Hyun Ju Lee, Dong-Yeon Park, Gyu Weon Hwang*, Keun Lee, and Cheol Seong Hwang, "Characterization of PbxPty Alloy Formation on a Pt Substrate during Liquid-Delivery MOCVD of Pb(Zr,Ti)O3 Thin Films", J. Electrochem. Soc., Vol. 153 (5), F81-F86, 2006.

25. Joon Seop Sim, Jin Shi Zhao, Hyun Ju Lee, Keun Lee and Cheol Seong Hwang*, “Characteristics of polycrystalline SrRuO3 thin film electrodes for metal-organic chemical vapor-deposited Pb(Zr0.2Ti0.8)O3 thin films”, J. Electrochem. Soc., 153 (11), C777-C785, 2006.

26. Jin Shi Zhao, Joon Seop Sim, Hyun Ju Lee, Dong-Yeon Park, and Cheol Seong Hwang*, “A Study of Liquid Delivery MOCVD of Lead Oxide Thin Films on Pt and Ir Substrates”, J. Electrochem. Soc., 152(5) , C277-C282, 2005.

27. Jin Shi Zhao, Dong-Yeon Park, Moo Jin Seo, Cheol Seong Hwang, Young Ki Han, Cheol Hoon Yang*, and Ki Young Oh, “Metallorganic CVD of High-Quality PZT Thin Films at Low Temperature with New Zr and Ti Precursors Having MMP Ligands”, J. Electrochem. Soc., 151(5), C283-C291, 2004.

28. Seehwa Jeong, Jin Shi Zhao, Hye Ryoung Kim, Dong-Yeon Park, Cheol Seong Hwnag*, Young Ki Han, Cheol Hoon Yang, Ki Young Oh, Seung-Hyun Kim, Dong-Soo Lee, Jowoong Ha, "Metal-organic chemical vapor deposition of Pb(Zr,Ti)O3 thin films with different precursor solutions for testing mass-production compatibility", J. Electrochem. Soc., 150, C678-C687, 2003.

29. Jin Shi Zhao, Ji Eun Lim, Moon Joo Cho and Cheol Seong Hwang, and Seung-Hyun Kim,”Heat-treatment induced ferroelectric fatigue of Pt/Sr1-xBi2+yTa2O9/Pt thin-film capacitors.” Appl. Phys. Lett., 81, 1477-1479, 2002.



美国专利：

1. “Nonvolatile Memory Devices That Use Resistance Materials And Internal Electrodes”美国，US8,698,281 B2（授权），2014年。

2. “Semiconductor Memory Device”，美国，US 8,581,346 B2（授权），2013。

3. “Multi-Level Nonvolatile Memory Devices Using Variable Resistive Elements”，美国，US8,358,527B2（授权），2013。

4. “Variable Resistance Memory Devices and Methods of Programming Variable Resistance Memory Devices”，美国，US8,451,645 B2（授权），2013。

5. “Nonvolatile Memory Devices and Methods of Forming the Same”，美国，US8,614,125 B2（授权），2013。

6. “Nonvolatile Memory Device”，美国，US 8,331,152 B2（授权），2012。

7. “Semiconductor Memory Device”，美国，US8,264,018 B2（授权），2012。

8. “Nonvolatile Memory Device Using Resistance Material And Inner Electrode, Method Of Manufacturing The Same, And Processing System Including The Same”，美国，US 8,314,003 B2（授权），2012。

9. “Resistance-Type Random Access Memory Device Having Three-Dimensional Bit Line and Word Line Patterning”，美国，US8,338,224（授权），2012。

10. “Resistive Random Access Memory”，美国，US 8,148,765 B2（授权），2012。

11. “Nonvolatile Memory Devices that Use Resistance Materials and Internal Electrodes, and Related Methods and Processing Systems”,美国， US 7,952,163 B2（授权），2011年。

12. “Semiconductor Devices Having Resistive Memory Element”，美国，US 7,838,863 B2（授权）, 2010。

13. “Non-Volatile Semiconductor Memory Devices”,美国，US 2010/** A1，2010。

14. “Bipolar Resistive Memory Device Having Tunneling Layer”，美国，US 2008/** A1，2008。

韩国专利：

15. “Multi-level Nonvolatile Memory Device Using Variable Resistive Element”，韩国，**（授权），2015年。

16. “Resist RAM and Method of Manufacturing The same”，韩国，**（授权），2015。

17. “Non-Volatile Memory Device, Method of Fabricating the Same, and Processing System Comprising the Same”，韩国，**(授权) ，2014。

18. “Variable Resistance Memory Device And Program Method Thereof”，韩国，10-2**，2011。

19. “Semiconductor memory device and method of forming the same”，韩国，10-2**，2011，

20. “Resist RAM and Method of Manufacturing The same”，韩国， 10-2**，2010。

21. “Semiconductor Device”，韩国，10-2**，2010。

22. “Nonvolatile Memory Device”，韩国，10-2**，2010年。

23. “METHODS FOR FABRICATING RESISTIVE RANDOM ACCESS MEMORY DEVICES”，韩国，10-2**，2010。

24. “The Method Of Semiconductor Device”，韩国，**00，2010。

25. “Resist Random Access Memory Device And Method For Manufacturing The Same”，韩国，**24，2010。

26. “Bipolar Switching Type Nonvolatile Memory Device Having Tunneling Layer”，韩国，**（授权），2009。

27. “SEMICONDUCTOR DEVICES HAVING RESISTIVE MEMORY ELEMENT”，韩国，10-2**，2009。

中国专利：

28. “一种多阻态阻变存储器”，中国，ZL**6.X（授权），2015。

29. “一种利用碳纳米管作为固态电解液的阻变存储器”，中国，ZL**6(授权)，2015。

30. “一种自发生长金属纳米晶颗粒的P／N型叠层阻变存储器”，中国，ZL**7.1(授权)，2014。