窦润江 ,曹中祥 ,李全良 ,冯 鹏 , 刘力源,刘 剑 ,吴南健
AuthorsHTML:窦润江 ^{1, 2}，曹中祥 ¹ ，李全良 ¹ ，冯 鹏 ^{1, 2}， 刘力源 ^{1, 2}，刘 剑 ^{1, 2}，吴南健 ^{1, 2, 3}
AuthorsListE:Dou Runjiang,Cao Zhongxiang,Li Quanliang,Feng Peng, Liu Liyuan,Liu Jian,Wu Nanjian
AuthorsHTMLE:Dou Runjiang^{1, 2}，Cao Zhongxiang¹，Li Quanliang¹，Feng Peng^{1, 2}， Liu Liyuan^{1, 2}，Liu Jian^{1, 2}，Wu Nanjian^{1, 2, 3}
Unit:1. 中国科学院半导体研究所半导体超晶格国家重点实验室，北京 100083；
2. 中国科学院大学材料与光电研究中心，北京 100049；
3. 中国科学院脑科学与智能技术卓越创新中心，北京 100083

Unit_EngLish:1. State Key Laboratory of Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China；
2. Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences， Beijing 100049，China；
3. Center for Excellence in Brain Science and Intelligence Technology，Chinese Academy of Sciences， Beijing 100083，China

Abstract_Chinese:设计了一种基于新型像素结构的高速低功耗图像传感器芯片．芯片采用提出的梯度掺杂掩埋型光电二极管 (PPD)和非均匀掺杂沟道传输管的像素结构，有效地提高了 PPD 中光生载流子的横向转移速度，降低了光生载流子 的残留，减少了图像传感器芯片的拖尾现象．芯片采用低功耗设计的像素信号读出电路阵列，降低了图像传感器芯 片的整体功耗．图像传感器芯片采用 0.18 μm CMOS 工艺制备，像素尺寸为 18 μm×18 μm，数字量化精度为 12 bit．设计了高速 CMOS 成像系统，并在暗室环境下搭建了图像传感器的光电测试平台．测试得到高速 CMOS 图 像传感器的灵敏度为 11 V/(lx·s)，动态范围为 65 dB，在 816×600 的分辨率下可稳定输出 1 000 帧/s 的高速图像数 据．图像传感器工作在最大增益为 4、帧率为 1 000 帧/s 的工作条件时的功耗为 830 mW．基于设计的高速 CMOS 图像传感器芯片，试制了一款高速 CMOS 相机．将试制的高速相机应用到高速目标跟踪和大容量存储系统中．实验 结果表明，整体系统工作稳定，高速 CMOS 图像传感器可以长时间地稳定传输高质量的高速图像数据，同时跟踪系 统可以稳定跟踪目标、存储系统可以正确存储高速图像数据．
Abstract_English:In this study，a high-speed low-power image sensor chip based on a new pixel structure was designed. The chip adopts the proposed gradient doped pinned photodiode(PPD)and non-uniformly doped channel transfer tube， which effectively improves the lateral transfer speed of photo-generated carriers in the PPD，reduces the residual photo-generated carriers，and reduces the smearing of image sensor chips. The chip uses a pixel signal readout circuit array designed with low power consumption，and this reduces the overall power consumption of the image sensor chip. The image sensor chip was prepared using a 0.18 μm complementary metal oxide semiconductor(CMOS) process；the pixel size was 18 μm×18 μm，and the digital quantization accuracy was 12 bit. A high-speed CMOS imag-ing system was designed，and a photoelectric test platform for the image sensor was established in a dark room envi\u0002ronment. The sensitivity of the image sensor was 11 V/(lx·s)，and the dynamic range was 65 dB. The image sensor could stably output 1 000 frames per second of high-speed image data at a resolution of 816×600. The image sensor consumed 830 mW while operating at a maximum gain of 4 and a rate of 1 000 frames per second. Based on the designed high-speed CMOS image sensor chip，a prototype of a high-speed CMOS camera was designed and fabricated. The prototype high-speed camera was applied to high-speed target tracking and large-capacity storage systems. The experimental results show that the overall system works stably. The high-speed CMOS image sensor can steadily transmit high-quality high-speed image data for a long time. Meanwhile，the tracking system can stably track its target，and the storage system can correctly store high-speed image data.
Keyword_Chinese:高速；低功耗；CMOS 图像传感器；掩埋型光电二极管；高速成像
Keywords_English:high-speed；low-power；CMOS image sensor；pinned photodiode；high-speed imaging

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