\r代红丽^{1, 2, 3}，赵红东¹，王洛欣²，石艳梅²，李明吉²，李宇海\r³\r
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AuthorsHTML:\r代红丽^{1, 2, 3}，赵红东¹，王洛欣²，石艳梅²，李明吉²，李宇海\r³\r
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AuthorsListE:\rDai Hongli^{1, 2, 3}，Zhao Hongdong¹，Wang Luoxin²，Shi Yanmei²，Li Mingji²，Li Yuhai\r³\r
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AuthorsHTMLE:\rDai Hongli^{1, 2, 3}，Zhao Hongdong¹，Wang Luoxin²，Shi Yanmei²，Li Mingji²，Li Yuhai\r³\r
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Unit:\r\r1. 河北工业大学电子信息工程学院，天津 300401；\r
\r\r2. 天津理工大学电气电子工程学院，天津 300384；
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\r3. 光电信息控制和安全技术重点实验室，天津 300308\r
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Unit_EngLish:\r1. School of Electronics Information Engineering，Hebei University of Technology，Tianjin 300401，China；
2. School of Electrical and Electronic Engineering，Tianjin University of Technology，Tianjin 300384，China；
3. Key Laboratory of Electro-Optical Information Control and Security Technology，Tianjin 300308，China\r
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Abstract_Chinese:\r为了减小绝缘体上硅(SOI)器件的比导通电阻，提高器件的击穿电压，提出一种带有p 型岛的SOI 器件新结构．该结构的特征如下：首先，漂移区周围采用U 型栅结构，在开启状态下，U 型栅侧壁形成高密度电子积累层，提供了一个从源极到漏极低电阻电流路径，实现了超低比导通电阻；其次，在漂移区引入的氧化槽折叠了漂移
区长度，大大提高了击穿电压；最后，在氧化槽中引入一个p 型岛，该高掺杂p 型岛使漂移区电场得到重新分配，提高了击穿电压，且p 型岛的加入增大了漂移区浓度，使器件比导通电阻进一步降低．结果表明：在最高优值条件下，器件尺寸相同时，相比传统SOI 结构，新结构的击穿电压提高了140%，比导通电阻降低了51.9%．\r
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Abstract_English:\rAn ultralow specific on-resistance(Ron,sp)of a silicon on insulator(SOI)device with a p-type island is proposed to reduce the specific on-resistance and improve the breakdown voltage of an SOI device. The device has the following features. First，a U-shaped gate is installed around the drift region. In the on-state，the U-shaped gate induces a high-density electron accumulation layer along the sidewall，which provides a low-resistance current path from the source to the drain，to achieve an ultralow R on,sp. Second，an oxidation trench is introduced into the drift region. This oxidation trench can fold the drift region length，which considerably increases the breakdown voltage. Finally，a p-type island is introduced. The highly doped p-type island redistributs the drift region electric field， which improves the breakdown voltage. The addition of the p-type island also increases the drift region concentration，which further decreases the device R on,sp. Simulation results show that under the condition of the highest FOM，the breakdown voltage is increased by 140%，and the specific on-resistance is reduced by 51.9% compared with a conventional SOI device at the same cell pitch.\r
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Keyword_Chinese:绝缘体上硅；击穿电压；比导通电阻\r

Keywords_English:silicon on insulator(SOI)；breakdown voltage；specific on-resistance\r


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