xiaomi@tju.edu.cn
微电子学与固体电子学
未公开
副教授
共振隧穿型太赫兹振荡器贴片天线测试

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高压直流金属化薄膜电容器绝缘失效机理与抑制方法研究

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CMOS工艺太赫兹振荡器非标准自定制电感测试

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基于微带传输线的非透明聚合物中电树枝的表征

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用于光纤到户的硅基光电集成接收机研究

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溶出试验仪-PLC控制系统

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药检取样器PLC控制系统研究

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制酸力测定仪PLC控制系统研究
一种高性能铌酸镧系微波介质陶瓷

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一种多频段微带天线

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电容器温度特性自动测试系统及测试方法

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新型无铅X8R型多层陶瓷电容器介质及其制备方法

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基于射频识别技术的电子导航系统

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一种小型化双频带带通微波滤波器

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基于多模谐振器的多频带带通微波滤波器

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一种新型多频段微带天线

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基于耦合短截线的小型化高选择性低通微波滤波器
本发明公开了一种高性能铌酸镧系微波介质陶瓷，其组成为(La1-xSmx)NbO4(0﹤x≤0.1)。本发明成功地获得了Q×f达到60000Ghz左右、介电常数约为20左右，谐振频率温度系数近0ppm/℃的高性能微波陶瓷介质。本发明制备工艺简单，过程无污染，是一种很有前途的毫米波电路的微波介质材料。

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本发明公开了一种多频段微带天线，包括基板，基板的上表面设置有辐射贴片和传输线，基板的下表面设置有接地板，所述辐射贴片为矩形结构，所述传输线由倒梯形结构和矩形结构相结合构成，传输线的一端与辐射贴片相连接，传输线的另一端与基板底端相连接，所述辐射贴片上沿辐射贴片中轴线相对称的设有L形槽；所述接地板为矩形金属接地板，接地板的上部设有开口向下的E形开槽，E形开槽的中部开槽为相互咬合的蛇形结构，接地板的下部沿接地板中轴线相对称的设置有矩螺旋形开槽。

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本发明公开了一种电容器温度特性自动测试系统及测试方法，该系统包括上位机、单片机、电容切换模块、高低温箱、温度传感器、安捷伦电容电桥以及被测电容器组，所述上位机根据温度信号控制所述单片机；所述单片机控制电容切换模块的继电器组作为电容通路的选择开关，实现所述安捷伦电容电桥被测电容器组的对应通、断连接，自动切换安捷伦电容电桥与被测电容的连接，分别实现当前温度下各被测电容器组的电容性能参数测试；所述安捷伦电容电桥通过单片机不断地将测试结果上传到上位机；所述上位机实现测量数据的自动采集。

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本发明公开了一种新型无铅多层陶瓷电容器用陶瓷介质：(1)按照Bi4(TixSn1-x)3O12的化学计量比，其中0≤x≤1，称取Bi2O3、SnO2、TiO2，于700-1000℃煅烧，制得粉末A；(2)按BaTiO3∶Nb2O5∶Co2O3∶Nd2O3∶MnO2∶CeO2∶粉末A的质量比为100∶1～10∶5～10∶0.25～1∶0.5～5∶0.25～1∶5～15进行二次配料，球磨细化后得瓷料成品。

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本发明公开了一种基于射频识别技术的电子导航系统，由射频主机模块、控制电路模块、信息播报电路模块，以及独立存在的智能卡组成。当智能卡靠近或远离射频主机时，射频主机产生高电平响应脉冲信号并输入到控制电路，控制电路进行延时，信息播报电路得以导通，完成该电路中存储的信息播报。本发明的有益效果是，实现了自助式导航。另外，也可在本发明的基础上稍加改动，即可应用到电子地图、电子导游、电子导盲等多个领域，具有十分广阔的应用前景。

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本发明通过应用新型的谐振器结构，进一步缩小滤波器的设计尺寸，降低制作成本，实现性能良好的双频带带通滤波器。具体来说，本发明利用双螺旋缺陷地结构和T-型微带线结构之间的多模耦合来实现双频带性能，并用对称结构增大带宽和提高选择性。

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本实用新型公开了基于多模谐振器的四频带带通滤波器，包括介质基板、接地板和谐振器，所述谐振器由平行设置的一字型微带线和矩形微带线组成，所述矩形微带线的两端相对称地设置有与所述一字型微带线相连通的L 型微带线，所述一字型微带线的两端分别耦合有输入馈线和输出馈线，所述输入馈线和输出馈线上均设置有与所述一字型微带线相耦合的枝节；所述接地板与所述谐振器的耦合位置相对应的设置有矩形缺陷地。本实用新型滤波器利用多并联通路的多模谐振器实现多频带特性，进一步缩小滤波器的设计尺寸，降低制作成本，性能良好。

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本发明公开了一种多频段天线。它包括基板、开对称双L槽矩形辐射贴片、梯形阻抗匹配输入传输线，以及有开口向下E型复合中心部位蛇形开槽、对称方形螺旋形开槽的矩形金属接地板；基板上表面设有开对称双L槽矩形辐射贴片和梯形阻抗匹配输入传输线；开双L槽矩形辐射贴片下端与梯形阻抗匹配输入传输线上端相连；基板下表面设有矩形金属接地板，开口向下E型复合中心部位蛇形开槽位于矩形金属接地板上半部分，对称螺旋形开槽位于矩形金属接地板下半部分，矩形金属接地板底端与基板相连。

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本实用新型公开了一种基于耦合短截线的小型化高选择性低通微波滤波器，包括接地板、介质层和顶层，所述接地板上设置有由内环和外环构成的回型缺陷地，所述内环和外环上分别设置有开口，所述回型缺陷地的两侧分别相对称地设置有C 型缺陷地，所述顶层的中部设有传输线，所述传输线的上下两侧分别相对称的连接有相互耦合的两个L 型传输线。该滤波器利用阶跃阻抗L 型传输线之间的耦合作用，实现了较宽的阻带，同时利用带C 型缺陷地结构的接地板来改善低通滤波器的选择性。
Bi4(Ti1/3Sn2/3)3O12掺杂BaTiO3基X8R陶瓷微观结构与介电性能

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碳酸锰和纳米钛酸钡的添加对钛酸钡陶瓷的影响

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Effects of a site substitution of bivalent ions on Ag(Nb0.8Ta0.2)O3

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The Equivalent Circuit Modeling and Application in Band-pass Filter of Spiral-shaped Defect Ground Structure

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Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷结构和电性能的影响

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Nonlinear current–voltage behavior of CaCu3Ti4O12 thin films derived from sol–gel method

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钛酸钡基低频热稳定陶瓷掺杂CCTO的研究

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一种915MHz 0.18um COMS增益可变的功率放大器

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Study of (111)-Oriented PZT Thin Films Prepared By A Modified Sol-gel Method

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Influence of BaB2O4 Glass on the Synthesis of Ba2Ti9O20 Ceramics

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The structure and properties of Ag(Nb0.8Ta0.2)O3 ceramic doped with MnNb2O6

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A Lowpass Filter With Compact Size and Sharp Roll-Off

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Compact Dual-Band Bandpass Filters Based On A Novel Defected Ground Spiral Resonator

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Restoration hysteresis effect of nonlinear current–voltage behavior and negative resistance characteristics of sol–gel derive

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The Microstructure and Properties of Ag(Nb0.8Ta0.2)1-x(Mn0.5W0.5)xO3 ceramic system

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The Equivalent Circuit Modeling And Application in Band-Pass Filter of Spiral-Shaped Defect Ground Structure

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Quad-band bandpass filter based on single stepped-impedance ring resonator

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一种应用于2.45GHz有源标签接收机的低中频下混频器的设计

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Nonlinear current-voltage behavior in La-doped CaCu3Ti4O12 thin films derived from sol-gel method

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Influence of thermal treatment on the nonlinear current–voltage behavior and restoration hysteresis effect of CaCu3Ti4O12 thi

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Effects of Cu-content on Non-Ohmic Properties of CaCu3Ti4O12

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Effects of temperature and Ti-nonstoichiometry on electric properties of CaCu3Ti4O12 thin films

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A Compact Low-Profile and Quad-Band Antenna with Three Different Shaped Slots

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Nonlinear current-voltage behavior in PZT thin films

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Influence of Molybdenum substitution on the microwave dielectric properties of CaWO4 ceramic

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The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

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Study of the microwave dielectric properties of (La1-xSmx)NbO4 (x=0-0.10) ceramics via bond valence and packing fraction

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Crystal structure and microwave dielectric properties of Ta5+ substituted MgZrNb2O8 ceramics

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Low temperature sintering behavior and microwave dielectric properties of LaNbO4 ceramics with BaCu(B2O5) additive

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Crystal structure and microwave dielectric properties of MgZr1？xSnxNb2O8 ceramics

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Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol–gel process

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Effect of Ni2+ Substitution on Crystal Structure and Microwave Dielectric Properties for MgZrNb2O8 Ceramics

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Non-Ohmic Properties of MgTiO3 Doped CaCu3Ti4O12 Thin Films Deposited by Magnetron Sputtering Method

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Effect of Co2+ substitution on crystal structure and microwave dielectric properties of MgZrNb2O8 ceramics

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The relationship between the bond ionicity, lattice energy, bond energy and microwave dielectric properties of LaNbO4 ceramic

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The effect of PtxPb intermetallic metastable phase on the crystal orientation in PZT thin films

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Fabrication of low-resistance LaNixO3+δ thin films for ferroelectric device electrodes

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Bond ionicity, lattice energy, bond energy, and microwave dielectric properties of Ca1-xSrxWO4 ceramics

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Influence of Ge4+ substitution for Zr4+ on the microwave dielectric properties of Mg(Zr1-xGex)Nb2O8 (0≤x≤0.4) ceramics

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Microstructure and dielectric properties of BaTiO3–(Bi0.5Na0.5)TiO3–NiNb2O6 ceramics

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Characteristics and microwave dielectric properties of low loss MgZr0.85Sn0.15Nb2O8 ceramics

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Crystal structure and microwave dielectric properties of low-permittivity Sr2MgSi2O7 ceramic

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Relationships between bond ionicity, lattice energy, bond energy and the microwave dielectric properties of La(Nb1-xTax)O4 (x

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Structure and microwave dielectric properties of MgZr(Nb1？xSbx)2O8 (0≤x≤0.1) ceramics

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The effect of sintering temperature on the crystal structure and microwave dielectric properties of CaCoSi2O6 ceramic

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The correlations between complex chemical bond theory and microwave Dielectric Properties of Ca2MgSi2O7 Ceramics

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Non-Ohmic behavior of copper-rich CCTO thin film prepared through magnetron sputtering method

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超级电容器研究进展

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Dependence of microwave dielectric properties on the substitution of isovalent composite ion for Nb-site of MgZrNb2-x(Sn1/2W1

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Influence of Ni2+ substitution for Zn2+ on the microwave dielectric properties of Zn1-xNixZrNb2O8 ceramics

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Combined synthesis methods for producing LaNbO4 ceramics and investigation of microwave dielectric properties based on comple

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Synthesis of CoTe nanowires: a new electrode material for supercapacitor with high stability and high performance

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Bond ionicity, lattice energy, bond energy and the microwave dielectric properties of non-stoichiometric MgZrNb2+xO8+2.5x cer

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Electrical properties of CaCu3Ti4O12-EPDM for cable accessories