董红
性别 : 男 所属部门 : 电子科学与工程系
职称 : 副教授 学历 :
行政职务 : 所学专业 :
办公电话 : **
邮箱 : donghong03@hotmail.com，donghong@nankai.edu.cn
研究方向 : III-V族半导体和Ge与高k栅介质的表面界面研究。创新型ALD设备研发，先进沉积工艺的开发，利用ALD制备离子器件以用于类神经晶体管等。



个人简历 博士后，德州大学达拉斯分校，2013.11-2014.7。
博士, 材料科学与工程，美国德州大学达拉斯分校 2009.8-2013. 08
毕业论文题目：磷化铟和磷化镓及与高介电常数材料表面、界面表征
导师: Prof. Robert M. Wallace （半导体高介电常数材料先驱之一，电气电子工程师学会（IEEE）和 美国真空学会（AVS）的委员（Fellow））
硕士，物理学， 美国德州农工大学科莫斯分校, 2007.8- 2009.07
导师：Prof. Anil Chourasia
本科， 物理学基地班，兰州大学，2003.09- 2007.06
科研项目/成果/获奖/专利 InSb (100)/高k栅介质热稳定性和原子层沉积温度优化研究----2016-01-01到2017-12-31
高k电介质/Ge界面热稳定性与氮化物界面层效应的研究----2015-10-01到2018-09-30
高κ栅介质/III-V族半导体界面元素扩散表征及钝化研究----2016-01-01到2018-12-31
技术服务合同----2018-03-09
江苏省2016年“双创计划”项目----2016-05-01
柔性机械臂内壁均匀镀膜技术研发项目----2018-10-20


论文/专著/教材Publications
1. Maokun Wu, Xiaolong Yao, Yuan Hao, Hong Dong, Yahui Cheng, Hui Liu, Feng Lu, Weichao Wang, Kyeongjae Cho, Wei-Hua Wang, “Electronic structures, magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2”, Physics Letter A, 2017, Accepted. https://doi.org/10.1016/j.physleta.2017.10.024.
2. Hong Dong, Cheng Gong, Rafik Addou, Stephen McDonnell, Angelica Azcatl, Xiaoye Qin, Weichao Wang, Wei-Hua Wang, Christopher L Hinkle, and Robert M. Wallace “Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy”, ACS Applied Materials & Interfaces, Accepted. DOI: 10.1021/acsami.7b10974.
3. Xiaoran Shi, Xinglu Wang, Yong Sun, Chen Liu, WeiHua Wang, Yahui Cheng, Weichao Wang, Jiaou Wang, Kyeongjae Cho, Feng Lu, Hui Liu and Hong Dong*, “Interface chemistry study of InSb/Al2O3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy”, Applied Surface Science, 425,927, 2017.
4. Xinglu Wang, Yanfei Zhao, Rong Huang, Fangsen Li, Xiaoming Lu, Yang Shen, Hu Wang, Dawei Shao, Baimei Tan, Jian Zhang, Xinjian Xie, An Dingsun*, and Hong Dong*, “Thermal Stability Study of GaP/high-k Dielectrics Interfaces”, Advanced Materials Interfaces, 4, **, 2017, DOI:10.1002/admi..
5. Yunna Zhu, Xinglu Wang, Chen Liu, Wei-Hua Wang, Yahui Cheng, Weichao Wang, Jiaou Wang, Shengkai Wang, Hui Liu*, Hongliang Lu* and Hong Dong*, “Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing”, Surfaces and Interfaces, 9, 51, 2017.
6. Dawei Shao, Yahui Cheng,* ,Jie He, Deqiang Feng, Lingcheng Zheng, Lijun Zheng, Xinghua Zhang, Jianping Xu, Weichao Wang, Weihua Wang, Feng Lu, Hong Dong, Luyan Li, Hui Liu, Rongkun Zheng, and Hui Liu, “A Spatially Separated Organic?Inorganic Hybrid Photoelectrochemical Cell for Unassisted Overall Water Splitting” ACS Catalyst, 7, 5308?5315, 2017.
7. M. Liu, L. Chen, X. Wang, Y. Cheng, F. Lu, W-H Wang, J. Yang, X. Du, J. Zhu, H. Liu, H. Dong*, W. Wang*, “A Rational Design of Heterojunction Photocatalyst CdS Interfacing with One Cycle of ALD Oxide”, Journal of Materials Science and Technology, 32, 489, 2016.
8. H. Dong, R. Galatage, W. Cabrera, B. Brennan, X. Qin, J. Kim, C. L. Hinkle, Y. Chabal, and R. M. Wallace, “In situ study of Si interfacial passivation layer between high-k dielectrics and InP”. ACS Applied Materials and Interfaces, 6, 7340，2014.
9. H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, and R. M. Wallace, “In situ study of Atomic layer deposition of HfO2 on InP (100)”, Applied Physical Letters, 102, 171602，2013.
10. H. Dong, W. Cabrera, R.V. Galatage, S. KC, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, and R. M. Wallace, “Indium diffusion through high-k dielectrics in high-k/InP stacks”, Applied Physics Letters, 103, 061601，2013.
11. H. Dong, B. Brennan, X. Qin, D. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, “In situ study of atomic layer deposition of Al2O3 on GaP (100)”, Applied Physics Letters, 103, 121604，2013.
12. H. Dong, Santosh KC, W. Cabrera, A. Zacatzi, X. Qin, B. Brennan, C. L. Hinkle, Y. Chabal, K. Cho, and R. M. Wallace, “In situ study of e-beam evaporation of Al and Hf on native oxide InP”, Journal of Applied Physics, 114, 203505, 2013.
13. H. Dong, Santosh KC, X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, and R. M. Wallace, “In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP”, Journal of Applied Physics, 114, 154105, 2013.
14. H. Dong, J. L. Edmondson, R. L. Miller, A. R. Chourasia, “Chemical reactivity at Fe/CuO interface studied in situ by X-ray photoelectron spectroscopy”, Vacuum, 101, 27, 2014.
15. Santosh KC, H. Dong, R. C. Longo, W. Wang, K. Xiong, R. M. Wallace, and K. Cho, “Electronic properties of InP(100)/HfO2 (001) interface: band offset and oxygen dependence”, Journal of Applied Physics, 115, 023703，2014.
16. X. Qin, H. Dong, J. Kim, and R. M. Wallace, “A crystalline oxide passivation for Al2O3/AlGaN/GaN”, Applied Physics Letters, 105, 141604, 2014.
17. A. Azcatl, S. McDonnell, Santosh KC, X. Peng, H. Dong, X. Qin, R. Addou, G. I. Mordi, N. Lu, J. Kim, K. Cho, and R. M. Wallace, “MoS2 functionalization for ultrathin atomic layer deposited dielectrics” Applied Physics Letters, 104，111601，2014.
18. W. Cabrera, B. Brennan, H. Dong, T. P. O’Regan, I. M. Povey, E. O’Connor, P. K. Hurley, R. M. Wallace, Y. J. Chabal, “Diffusion of InGaAs elements through hafnium oxide during post deposition annealing”, Applied Physics Letters, 104, 011601, 2014.
19. C. Gong, S. McDonnell, X. Qin, A. Azcatl, H. Dong, Y. Chabal, K. Cho, R. M. Wallace, “Realistic Metal-Graphene Contact Structures”, ACS Nano, 8, 642, 2013.
20. W. Cabrera, B. Brennan, H. Dong, T. P. O’Regan, I. M. Povey, S. Monaghan, é O’Connor, P. K. Hurley, R. M. Wallace, and Y. J. Chabal, “Diffusion of In0.53Ga0.47As elements hafnium oxide during post deposition annealing, Applied Physics Letters, 104, 011601, 2013.
21. X. Qin, H. Dong, B. Brennan, A. Azacatl, J. Kim, and R. M. Wallace, “Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN”, Applied Physics Letters, 103, 221604, 2013.
22. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors”, Applied Physics Letters, 102, 132903，2013.
23. D. M. Zhernokletov, H. Dong, B. Brennan, M. Yakimov, V. Tokranov, S. Oktyabrsky, J. Kim, R. M. Wallace, “Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces”, Applied Physics Letters, 102, 131602，2013.
24. D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, M. Yakimov, V. Tokranov, and S. Oktyarsky, “Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb”, Journal of Vacuum Science and Technology A, 31, 060602，2013.
25. X. Qin, B. Brennan, H. Dong, J. Kim, C. L. Hinkle, and R. M, Wallace, “In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N”, Journal of Applied Physics, 113, 244102，2013.
26. B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace, “In situ Studies of III-V Surfaces and High-K Atomic Layer Deposition”, Solid State Phenomena, 195, 90，2013.
27. Santosh KC, W. Wang, H. Dong, K. Xiong, R. C Longo, R. M. Wallace, K. Cho, “First principles study on InP (001) (2×4) surface oxidation”, Journal of Applied Physics, 113, 103705，2013.
28. S. McDonnell, B. Brennan, A. Azcatl, L. Lu, H. Dong, C. Buie, J. Kim, C. L. Hinkle, M. Kim, and R. M. Wallace, “HfO2 on MoS2 by atomic layer deposition: Adsorption Mechanism and Scalability”, ACS Nano, 7, 10354, 2013.
29. D. M Zhernokletov, P. Laukkanen, H. Dong, R. V. Galatage, B. Brennan, M. Yakimov, V. Tokranov, J. Kim, S. Oktyabrsky, R. M. Wallace, “Surface and interfacial reaction study of InAs (100)-crystalline oxide interface”, Applied Physics Letter, 102, 211601，2013.
30. D. Dick, J. Veyan, R. Longo, S. McDonnell, J. Ballard, X. Qin, H. Dong, J. Owen, J. Randall, R. M. Wallace, K. Cho, Y. Chabal, “Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth”, The Journal of Physical Chemistry C, 118, 482，2013.
31. D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, “Optimization of the ammonium sulfide (NH4)2S passivation process on InSb (111) A”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 30, 04E103，2012.
32. D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, “In situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition”, Applied Surface Science, 258, 5522，2012.
33. B. Brennan, X. Qin, H. Dong, J. Kim, R. M. Wallace, “In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN”, Applied Physics Letters, 101, 211604，2012.
34. B. Brennan, D. M Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace, “In situ surface pre-treatment study of GaAs and In0.53Ga0.47As”, Applied Physics Letters, 100, 151603，2012.
35. D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, B. M. Armstrong, “Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, 100, 192101，2012.
36. S. McDonnell, H. Dong, J. M. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, R. M. Wallace, “Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems”, Applied Physics Letters, 100, 141606，2012.
37. B. Brennan, H. Dong, D. M. Zhernokletov, J. Kim, R. M. Wallace, “Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al2O3 on Chemically Treated InP Surfaces”, Applied Physics Express, 4, 5701，2011.
38. J. F. Veyan, H. Choi, M. Huang, R. C. Longo, J. B. Ballard, S. McDonnell, M. P. Nadesalingam, H. Dong, I. S Chopra, J. HG Owen, W. P. Kirk, J. N Randall, R. M .Wallace, K. Cho, Yves J Chabal, “Si2H6 Dissociative Chemisorption and Dissociation on Si (100) (2×1) and Ge (100)-(2×1)”, The Journal of Physical Chemistry C, 115, 24534，2011.
39. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors," Applied Physics Letters, 99, 172901，2011.


Conference Talks
1. H. Dong, R. V. Galatage, X. Qin, D. Zhernokletov, B. Brennan, J. Kim, and R. M. Wallace, “Si interfacial passivation layer between InP and Al2O3”, Materials Research Society, April 1 to 5, 2013.
2. H. Dong, X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, J. Kim, and R. M. Wallace, “Temperature dependence study of ALD HfO2 on InP (100) by in-situ XPS”, TECHCON, September 9, 2012, Austin, TX. .
3. H. Dong, D. Zhernokletov, B. Brennan, J. Kim, and R. M. Wallace, “ALD half cycle study of HfO2 on InP (100) by in situ XPS”, American Vacuum Society International Symposium and Exhibition, Nashville, October 30 to November 4, 2011.
4. H. Dong, X. Qin, D. Zhernokletov, B. Brennan, J. Kim, and R. M. Wallace, “In situ interfacial study of E-beam Al deposition on native oxide InP (100)”, Physical Electronics Conference, Dallas, June 3 to 6, 2012.
5. H. Dong, D. Zhernokletov, B. Brennan, J. Kim, and R. M. Wallace, “ALD half cycle study of Al2O3 on GaP (100) by in situ XPS”, Physics and Chemistry of Surfaces and Interfaces, Santa Fe, January 4, 2012.
6. H. Dong, R. G. Galatage, W. Cabrera, B. Brennan, X. Qin, D. M. Zhernokletov, Santosh KC, S. McDonnell, K. Cho, C. L. Hinkle, J. Kim, Y. Chabal, and R. M. Wallace, “Surface and Interface Characterization of high-k dielectric on InP”, American Vacuum Society, Dallas Chapter, Richardson, August 8, 2013.
7. H. Dong, W. Cabrera, K. C. Santosh, S. McDonnell, X. Qin, D. M. Zhernokletov, J. Kim, K. Cho, C. L. Hinkle, Y. J. Chabal, E. M. Vogel, and R. M. Wallace, "Characterization and Engineering of High-k/InP Interfaces," 44th Semiconductor Interface Specialists Conference, Arlington, Virginia, December 05, 2013.
8. C. L. Hinkle, R. V. Galatage, D. M. Zhernokletov, H. Dong, S. R. M. Anwar, B. Brennan, R. M. Wallace, and E. M. Vogel, "III-V/High-k Defects: DIGS vs. Border Traps," 223rd Electrochemical Society Meeting, Toronto, Canada, May 12, 2013. INVITED
讲授课程 薄膜物理
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