孙甲明
教授


二级单位 ：光子学电子学材料研究中心
办公电话 ：**
电子邮箱 ：jmsun@nankai.edu.cn
办公地点 ：南开大学材料科学与工程学院，天津市海河教育园区同砚路38号材料楼149室
通讯地址 ：天津市海河教育园区同砚路38号材料楼149室，邮编:300353
主页网址 ：

研究方向
研究方向涉及III-V族、II-V族半导体材料、硅基发光材料，稀土发光材料、high-K微电子介质材料和储能材料，宽禁带透明导电材料、自旋电子学材料。长期从事分子束外延、MOCVD半导体材料外延生长和原子层沉积、PECVD、电子束蒸发、磁控溅射和薄膜沉积技术研究工作。近年来致力于以原子层为单位的数字化材料合成技术和新型纳米薄膜光电子器件研制工作， 利用原子层沉积方法研制具备特定物理性质的各类纳米复合结构功能薄膜材料，或者对半导体低维结构，石墨烯等二维材料表面进行沉积改性，以增强其性能或稳定性。应用领域涉及半导体光电子学薄膜材料与器件、复合纳米光电子功能材料与器件、电池等能源材料与器件。
个人简历
教育经历：
1995/9-1998/7，中国科学院长春光机与物理所，凝聚态物理博士，导师：范希武研究员
1991/9-1994/7，中国科学院光机与物理所，凝聚态物理硕士，导师：范希武，钟国柱研究员
1987/9-1991/7，吉林大学，固体物理学专业学士，导师：杨玉琨教授

研究经历：
2015/7-至今，南开大学，材料科学与工程学院，教授
2006/10-2015/6，南开大学，物理学院，教授，筹建了硅光子学与储能器件实验室，从事原子层沉积技术和纳米复合光电子功能材料和器件研究工作。
2001/10-2006/9，德国开姆尼茨罗森道夫研究中心离子束物理和材料研究所，博士后，从事高效率硅基电致发光器件的研究工作，导师：M.Helm教授和W.Skorupa博士
2000/9-2001/9，日本东京大学工学部电子科学系，博士后，从事分子束外延和Mn掺杂III-V族稀磁半导体自旋电子学材料研究工作。导师：田中雅明
1998/9-2000/10，中国科学院物理研究所，博士后。从事分子束外延和III-V族半导体量子阱光折变材料和器件，半导体量子阱微腔激光器研究工作。导师：周均明研究员
1991/9-1998/7 硕士和博士研究生，利用电子束蒸发和磁控溅射高真空薄膜沉积技术研制交流薄膜电致发光计算机平板显示器和硅基复合蓝色光致发光和电致发光器件。

代表性成果

1. Near-infrared electroluminescence from metal-oxide-semiconductor devices with erbium-doped gadolinium oxide on silicon,
Chunyan Jin, Junqing Liu*, and Jiaming Sun*, Appl. Phys. Lett. 114, 211102 (2019). https://doi.org/10.1063/1.**.
2. Growth of ultrathin SnO2 on carbon nanotubes by atomic layer deposition and their application in lithium ion battery anodes, Shengyun Zhu, Junqing Liu*, Jiaming Sun*, Applied Surface Science 484 (2019) 600–609, https://doi.org/10.1016/j.apsusc.2019.04.163.
3. Precise growth of Al2O3/SnO2/CNTs composites by a two-step atomic layer deposition and their application as an improved anode for lithium ion batteries, Shengyun Zhu, Junqing Liu*, Jiaming Sun** ,Electrochimica Acta 319 (2019) 490-498. https://doi.org/10.1016/j.electacta.2019.07.027.
4. Energy transfer under electrical excitation and enhanced electroluminescence in the nanolaminate Yb,Er Co-Doped Al₂O₃Films, Yang Yang, Zhongtao Ouyang, Jianzhao Liu, Jiaming Sun, Phys. Status Solidi RRL, (2019), ** (p1-5).https://doi.org/10.1002/pssr..
5. Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta₂O₅-Al₂O₃Films Grown
onSilicon by Atomic Layer Deposition. Junpeng Li, Jianzhuo Wu, Junqing Liu* and Jiaming Sun*, Nanoscale Research Letters,
14,(2019) 75 (p1-7), https://doi.org/10.1186/s11671-019-2907-0.
6. Structure and dielectric property of high-k ZrO₂films grown by atomic layer deposition using tetrakis(dimethylamido)zirconium and ozone, Junqing Liu, Junpeng Li, Jianzhuo Wu and Jiaming Sun*, Nanoscale Research Letters 14，(2019) 154（P1-12）. https://doi.org/10.1186/s11671-019-2989-8.
7. Blue electroluminescent Al₂O₃/Tm₂O₃nanolaminate films fabricated by atomic layer depositionon silicon, Yao Liu, Zhongtao Ouyang, Li Yang, Yang Yang and Jiaming Sun, Nanomaterials 9, (2019) 413(1-10).


8.Electroluminescent Yb₂O₃:Er and Yb₂Si₂O₇:Er nanolaminate films fabricated by atomic layer deposition on silicon, Zhongtao Ouyang, Yang Yang?, Jiaming Sun? Optical Materials 80(2018) 209-215.
9. Near-infrared electroluminescence from atomic layer doped Al2O3:Yb nanolaminate films on silicon, Zhongtao Ouyang, Yang Yang, Jiaming Sun, Scripta Materialia,Scripta Materialia 151, 1 July 2018, P 1-5
10. Intense electroluminescence from Al₂O₃/Tb₂O₃nanolaminate films fabricated by atomic layer deposition on silicon,Yang Yang, Na Li, and Jiaming Sun，Optics Express 26( 7), 2 Apr (2018), 9344-9350.
11.硅基光电子发光材料与器件/杨德仁等著, 撰写章节：第四章，稀土离子掺杂的硅基电致发光器件，P-79-99，北京, 科学出版社, 2016.1，ISBN 978-7--7
12. Structure and photoluminescence of the TiO₂films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone, Chunyan Jin, Ben Liu, Zhongxiang Lei and Jiaming Sun* Nanoscale Research Letters 10, 95 p1-9 (2015).

13Strong electroluminescence from SiO₂-Tb₂O₃-Al₂O₃mixed layers fabricated by atomic layer deposition, L. Rebohle, M. Braun, R. Wutzler, B. Liu, J.M. Sun, M. Helm, W. Skorupa Appl. Phys. Lett. 104, 251113 (2014).http://dx.doi.org/10.1063/1.**
14.Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition，
Qiongqiong Hou, Fanjie Meng and Jiaming Sun, Nanoscale Research Letters 8, 144 (2013).
15.Highly efficient silicon light emitting diodes produced by doping engineering,
Jianming Sun, M. Helm, W. Skorupa, B. Schmidt, A. Mücklich, Frontiers of Optoelectronics, 5(1), 7-12(2012).
16.Light emissionfrom ion-implanted silicon, J. M. Sun, M. Helm, W. Skorupa, B. Schmidt, and A. Mücklich,
Phys. Status Solidi C 6 (3), 716-720 (2009).
17.Giant stability enhancement of rare-earth implanted SiO2 light emitting devices by an additional SiON protection layer,
J. M. Sun, L. Rebohle, S. Prucnal, M. Helm, and W. Skorupa, Appl. Phys. Lett. 92, 071103 (2008).
18.Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions,
J. M. Sun, S. Prucnal, W. Skorupa, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 89, 091908 (2006)
19.Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,
J. M. Sun, W. Skorupa, T. Dekorsy , and M. Helm, J. Appl. Phys. 97, 123513 (2005).
20.Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device,
J. M. Sun, W. Skorupa, T. Dekorsy, and M. Helm, Appl. Phys. Lett. 85, 3387 (2004).
21.Below-band-gap electroluminescence related to doping spikes in boron-implanted silicon pn diodes,
J. M. Sun, T. Dekorsy, W. Skorupa, B. Schmidt, A. Mücklich, and M. Helm, Phys. Rev. B 70, 155316 (2004).