以下按英文字母顺序排列： 姓　　名： 董红
性　　别： 男
所属部门： 电子科学与工程系
行政职务：
职　　称： 副教授
学　　历：
所学专业：
办公电话：
电子邮件： donghong03@hotmail.com
研究方向： 高速低能耗电子器件材料与高-k氧化物和金属的界面接触表征。催化材料的表面与界面表征与分析。个人主页http://www.dfc-nfm.com/content/?266.html
个人简介： 博士, 材料科学与工程，美国德州大学达拉斯分校 2013. 08
毕业论文题目：磷化铟和磷化镓及与高介电常数材料表面、界面表征
导师: Prof. Robert M. Wallace （半导体高介电常数材料先驱之一，电气电子工程师学会（IEEE）和 美国真空学会（AVS）的委员（Fellow））
硕士，物理学， 美国德州农工大学科莫斯分校 2009.07
导师：Prof. Anil Chourasia
本科， 物理学，兰州大学，中国2007.06

科研项目、成果、获奖、专利等情况： 自2011年以来，在应用物理快报(Applied Physics Letters)等国际期刊发表31篇学术论文（第一作者为7篇），其中15篇应用物理快报。 曾在7次国际会议口头报告研究成果。关注与高速，低能耗半导体材料（III-V族半导体和过渡金属硫族化合物）与高-k和金属的界面和表面研究。

1. 通过X-射线光电谱的原位表征方法，揭示了InP表面/界面化学在原子层生长过程中的详细演变过程。
2. 通过X-射线光电谱与低能离子散射谱的组合运用，发现并表征了铟的外扩散现象，并与理论和电学表征相结合，为电子器件的工艺提供了有价值的信息。


撰写论文、专著、教材等： 期刊论文：
1.H. Dong, R. Galatage, W. Cabrera, B. Brennan, X. Qin, J. Kim, C. L. Hinkle, Y. Chabal, and R. M. Wallace, “In situ study of Si interfacial passivation layer between high-k dielectrics and InP”.ACS Applied Materials and Interfaces, 6， 7340，2014.
2.H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, and R. M. Wallace, “In situ study of Atomic layer deposition of HfO2 on InP (100)”, Applied Physical Letters, 102, 171602，2013.
3.H. Dong, W. Cabrera, R.V. Galatage, S. KC, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, and R. M. Wallace, “Indium diffusion through high-k dielectrics in high-k/InP stacks”, Applied Physics Letters, 103, 061601，2013.
4.H. Dong, B. Brennan, X. Qin, D. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, “In situ study of atomic layer deposition of Al2O3 on GaP (100)”, Applied Physics Letters, 103, 121604，2013.
5.H. Dong, Santosh KC, W. Cabrera, A. Zacatzi, X. Qin, B. Brennan, C. L. Hinkle, Y. Chabal, K. Cho, and R. M. Wallace, “In situ study of e-beam evaporation of Al and Hf on native oxide InP”, Journal of Applied Physics, 114, 203505, 2013.
6.H. Dong, Santosh KC, X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, and R. M. Wallace, “In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP”, Journal of Applied Physics, 114, 154105, 2013.
7.H. Dong, J. L. Edmondson, R. L. Miller, A. R. Chourasia, “Chemical reactivity at Fe/CuO interface studied in situ by X-ray photoelectron spectroscopy”, Vacuum, 101, 27, 2014.
8.Santosh KC, H. Dong, R. C. Longo, W. Wang, K. Xiong, R. M. Wallace, and K. Cho, “Electronic properties of InP(100)/HfO2 (001) interface: band offset and oxygen dependence”, Journal of Applied Physics, 115, 023703，2014.
9.A. Azcatl, S. McDonnell, Santosh KC, X. Peng, H. Dong, X. Qin, R. Addou, G. I. Mordi, N. Lu, J. Kim, K. Cho, and R. M. Wallace, “MoS2 functionalization for ultrathin atomic layer deposited dielectrics” Applied Physics Letters, 104，111601，2014.
10.W. Cabrera, B. Brennan, H. Dong, T. P. O’Regan, I. M. Povey, E. O’Connor, P. K. Hurley, R. M. Wallace, Y. J. Chabal, “Diffusion of InGaAs elements through hafnium oxide during post deposition annealing”, Applied Physics Letters, 104, 011601.
11.C. Gong, S. McDonnell, X. Qin, A. Azcatl, H. Dong, Y. Chabal, K. Cho, R. M. Wallace, “Realistic Metal-Graphene Contact Structures”, ACS Nano, 8, 642, 2013.
12.W. Cabrera, B. Brennan, H. Dong, T. P. O’Regan, I. M. Povey, S. Monaghan, é O’Connor, P. K. Hurley, R. M. Wallace, and Y. J. Chabal, “Diffusion of In0.53Ga0.47As elements hafnium oxide during post deposition annealing, Applied Physics Letters, 104, 011601, 2013.
13.X. Qin, H. Dong, B. Brennan, A. Azacatl, J. Kim, and R. M. Wallace, “Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN”, Applied Physics Letters, 103, 221604, 2013.
14.R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors”, Applied Physics Letters, 102, 132903，2013.
15.D. M. Zhernokletov, H. Dong, B. Brennan, M. Yakimov, V. Tokranov, S. Oktyabrsky, J. Kim, R. M. Wallace, “Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces”, Applied Physics Letters, 102, 131602，2013.
16.D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, M. Yakimov, V. Tokranov, and S. Oktyarsky, “Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb”, Journal of Vacuum Science and Technology A, 31, 060602，2013.
17.X. Qin, B. Brennan, H. Dong, J. Kim, C. L. Hinkle, and R. M, Wallace, “In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N”, Journal of Applied Physics, 113, 244102，2013.
18.B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace, “In situ Studies of III-V Surfaces and High-K Atomic Layer Deposition”,Solid State Phenomena, 195, 90，2013.
19.Santosh KC, W. Wang, H. Dong, K. Xiong, R. C Longo, R. M. Wallace, K. Cho, “First principles study on InP (001) (2×4) surface oxidation”, Journal of Applied Physics, 113, 103705，2013.
20.S. McDonnell, B. Brennan, A. Azcatl, L. Lu, H. Dong, C. Buie, J. Kim, C. L. Hinkle, M. Kim, and R. M. Wallace, “HfO2 on MoS2 by atomic layer deposition: Adsorption Mechanism and Scalability”, ACS Nano, 7, 10354, 2013.
21.D. M Zhernokletov, P. Laukkanen, H. Dong, R. V. Galatage, B. Brennan, M. Yakimov, V. Tokranov, J. Kim, S. Oktyabrsky, R. M. Wallace, “Surface and interfacial reaction study of InAs (100)-crystalline oxide interface”,Applied Physics Letter, 102, 211601，2013.
22.D. Dick, J. Veyan, R. Longo, S. McDonnell, J. Ballard, X. Qin, H. Dong, J. Owen, J. Randall, R. M. Wallace, K. Cho, Y. Chabal, “Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth”, The Journal of Physical Chemistry C, 118, 482，2013.
23.D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, “Optimization of the ammonium sulfide (NH4)2S passivation process on InSb (111) A”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 30, 04E103，2012.
24.D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, “In situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition”, Applied Surface Science, 258, 5522，2012.
25.B. Brennan, X. Qin, H. Dong, J. Kim, R. M. Wallace, “In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN”, Applied Physics Letters, 101, 211604，2012.
26.B. Brennan, D. M Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace, “In situ surface pre-treatment study of GaAs and In0.53Ga0.47As”, Applied Physics Letters, 100, 151603，2012.
27.D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, B. M. Armstrong, “Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, 100, 192101，2012.
28.S. McDonnell, H. Dong, J. M. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, R. M. Wallace, “Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems”, Applied Physics Letters, 100, 141606，2012.
29.B. Brennan, H. Dong, D. M. Zhernokletov, J. Kim, R. M. Wallace, “Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al2O3 on Chemically Treated InP Surfaces”,Applied Physics Express, 4, 5701，2011.
30.J. F. Veyan, H. Choi, M. Huang, R. C. Longo, J. B. Ballard, S. McDonnell, M. P. Nadesalingam, H. Dong, I. S Chopra, J. HG Owen, W. P. Kirk, J. N Randall, R. M .Wallace, K. Cho, Yves J Chabal, “Si2H6 Dissociative Chemisorption and Dissociation on Si (100) (2×1) and Ge (100)-(2×1)”, The Journal of Physical Chemistry C, 115, 24534，2011.
31.R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors," Applied Physics Letters, 99, 172901，2011.

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