Ph. D., Kochi University of Technology, Japan . (2008-2012)
工学博士，高知工科大学，日本
Post-doc., School of Environment Science and Technology, Kochi University of Technology, Japan (2012-2015)
博士后，高知工科大学环境理工学群，日本
副教授，陕西师范大学（2015.12-）
E-mail: dpwang@snnu.edu.cn



钙钛矿太阳能电池设计与开发
金属氧化物薄膜晶体管设计、制备、测试
氧化物纳米结构的制备与应用
半导体材料薄膜形成技术与应用
近年承担项目
1. 主持陕西师范大学引进人才科研启动基本资金项目，2015年12月-2018年12月。
近年发表论文
1. Comprehensive investigation of sputtered and spin-coated zinc oxide electron transport layers for highly efficient and stable planar perovskite solar cells. J. Power Sources 427 (2019) 223–230.
2. Oxidation, reduction, and inert gases plasma-modified defects in TiO₂ as electron transport layer for planar perovskite solar cells. J. CO₂ Util.32 (2019) 46–52.
3. Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors. Beilstein J. Nanotechnol. 10 (2019) 1125–1130.
4. Collaborative optimization of thermal budget annealing and active layer defect content enhancing electrical characteristics and bias stress stability in InGaZnO thin-film transistors. J. Phys. D Appl. Phys. 52(23) (2019) 235101.
5. Stoichiometry control of sputtered zinc oxide films by adjusting Ar/O₂ gas ratios as electron transport layers for efficient planar perovskite solar cells. Sol. Energ. Mat. Sol. C. 178 (2018) 200–207.
6. Controlled defects and enhanced electronic extraction in fluorine-incorporated zinc oxide for high-performance planar perovskite solar cells. Sol. Energ. Mat. Sol. C. 182 (2018) 263–271.
7. Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses. Beilstein J. Nanotechnol. 9 (2018) 2573–2580.
8. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses. Materials 11 (2018) 559.
9. CO₂ Plasma-Treated TiO₂ Film as an Effective Electron Transport Layer for High-Performance Planar Perovskite Solar Cells. ACS Appl. Mat. Inter. 9 (2017) 33989?33996.
10. Investigation of Carrier Generation Mechanism in Fluorine-doped n⁺-In-Ga-Zn-O for Self-Aligned Thin-Film Transistors. J. Display Technol. 12 (2016) 258?262.
11. Suppression of Degradation Induced by Negative Gate bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias. ACS Appl. Mat. Inter. 6(8) (2014) 5713?5718.

12. Drain Bias Effect on the Instability of Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Gate Bias and Illumination Stress. ECS Transactions 64(10) (2014) 65?70.
13. Effect of Drain Bias on Negative Gate Bias and Illumination Stress Induced Degradation in Amorphous InGaZnO Thin-Film Transistors, Jpn. J. Appl. Phys. 53(3S1) (2014) 03CC01.



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