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基本信息 The basic information
刘炜
微电子学院
博士研究生毕业
工学博士
副教授
电子科学与技术-微电子学与固体电子学
教育经历 Education Experience
2013/9-2016/6 中国科学院大学 微电子与固体电子学 研究生 博士
2005/9-2007/6 武汉大学物理科学与技术学院 微电子与固体电子学 研究生 硕士
2001/9-2005/6 武汉大学物理科学与技术学院 电子科学与技术 本科 学士
荣誉获奖 Awards Information
曾获中国科学院首届“王守武”奖学金，中国科学院朱李月华优秀博士毕业生，中科院半导体所所长奖等。
科学研究 Scientific Research
主要从事III-V族化合物半导体光电材料与器件的研究工作。
学术成果 Academic Achievements
目前，主持国家自然科学基金青年基金一项。在Optics Express, Applied Surface Science, Journal of Alloys and Compounds等国际高水平期刊上发表SCI论文数十篇，其中一作文章十余篇，并担任Optics Express, Optics Letters等期刊的审稿人，已获得授权发明专利6项。 代表性文章及专利如下：
Wei Liu, et al. "Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption”, Appl. Surf. Sci. vol. 456, pp. 487-492 (2018)
Wei Liu, et al. "Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells”, Opt. Express vol. 36, pp. 3427-3434 (2018)
Wei Liu, et al. "Influence of indium content on the unintentional background doping and device performance of InGaN/GaN multiple-quantum-well solar cells”, IEEE J. Photovolt. vol. 7, pp. 1017-1023 (2017)
Wei Liu, et al. "Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination”, J. Alloy Compd. vol. 725, pp. 1130-1135 (2017)
Wei Liu, et al. "Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement”, Mater. Res. Express vol. 4, pp. 045906 (2017)
Wei Liu, et al. "Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes”, J. Phys. D Appl. Phys. vol. 49, pp. 145104 (2016)
Wei Liu, et al. "Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes”, Superlattice Microst. vol. 96, pp. 220-225 (2016)
Wei Liu, et al. "Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells”, Opt. Express vol. 23, pp. 15935-15943 (2015)
Wei Liu, et al. "Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness”, J. Alloy Compd. vol. 625, pp. 266–270 (2015)
Wei Liu, et al. "Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells”, J. Vac. Sci. Technol. A vol. 33, pp. 061502 (2015)
Wei Liu, et al. "The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters”, Superlattice Microst. vol. 88, pp. 50-55 (2015)
刘炜 等，绿光LED芯片外延层的结构及生长方法，授权公告号：CNB（2018）
刘炜 等，一种雪崩光电二极管及其制备方法，授权公告号：CNB（2018）
刘炜 等，InGaN量子点的外延结构及生长方法，授权公告号：CNB（2017）
刘炜 等，基于二维岛的InGaN量子点外延结构及制备方法，授权公告号：CNB（2017）
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