Scientific Research Project
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1.光电化学腐蚀方法制备sic基准自由石墨烯, 2019-01-01-2019-12-31

Thesis Results
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1.罗兴云.Charge-neutral epitaxial graphene on 6HeSiC(0001) via FeSi intercalation.Carbon.2019,156 :187
2.liyanlu.Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitaxial graphene on 6HeSiC(0001) via boron compound intercalations.Carbon.2020,161 :323
3.yufapeng.Induced growth of quasi-free-standing graphene on SiC substrates.RSC Advances.2019
4.xiexuejian.Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique.SCRIPTA MATERIALIA.2019 :76
5.于璨璨.Uniform coverage of quasi-free standing monolayer graphene on SiC by hydrogen intercalation.Journal of Materials Science-Materials in Electronics.2017,28 (4):3884
6.张晶.Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method.Journal of Materials Science-Materials in Electronics.2018,29 (6):4495

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