赖李龙，博士，1967年生，台湾清华大学学士和硕士，复旦大学材料科学博士。
主要经历：
1998年2月-1999年9月汉磊科技工程师
1999年9月- 2003年3月茂德科技工程师
2003年4月-2018年12月中芯国际技术专家
2019年1月-现在 芯恩集成电路技术处长
Publication and Patents:
Publish 20 paper in conference, seminar and Journal.
Issue 17 patent and trade secret in SMIC career.
Give 7 speeches (tutorial) for invited seminar and conference.
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近五年来从事科研工作的主要成果：
?March 2019, The in-depth investigation for the mechanism of e-Beam effect to MOS alternation by Nanoprobing capacitance-voltage analysis, CSTIC
?November 2017, To Reveal Invisible Doping Defect by Nanoprobing Analysis, Simulation and Scanning Capacitance Microscopy, International Symposium of Testing and Failure Analysis (ISTFA)
?2016, Microelectronics Reliability 2016 (Journal) - “Applications of the pulsed current-voltage (I-V) and capacitance-voltage (C-V) techniques for high-resistive gates in MOSFETs”, Microelectronics Reliability (Journal)
?July 2016, The investigation of chemical shift of Silicon X-ray energy in different stoichiometry or structure with Microcalorimeter EDS, Microscopy and Microanalysis (USA)
?2015, The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis, Microelectronics Reliability (Journal)
?July 2015, The demonstrations and discussion for Static/Read/Write Noise Margin (SNM/RNM/WNM) via Nanoprobing to SRAM FA applications, International Symposium of Physical and Failure Analysis (IPFA),