| 教学大纲 教学内容安排与学习大纲：第一章Device Isolation, Contacts and Metallization (8学时)1.)Device Isolation (Locos, STI and SOI)2.)Contacts Introduction (Schottky Contacts, Ohmic Contacts and Alloyed Contacts)3.)Advanced Salicides Process4.)Metallization and Interconnect第二章Well Formation (6学时)1.)CMOS Structure Evolution2.)Retrograde Wells, Super Steep Retrograde Well3.)Source/Drain Engineering and Punchthrough Implant第三章Gat Oxide Technology (6学时)1.)Structure of Traditional Gate Oxide2.)Defects, Dielectric Breakdown and Leakage Current第四章 3.) Gate Oxide Reliability and Limits of Traditional Gate Oxide 4.) Introduction to High K and Metal Gate 5.) High K/Metal Gate Candidates and Related Issues 6.) High K/Metal Gate Integration Scheme第四章 Low K Dielectric (4学时)1.)Introduction to Low K Dielectrics2.)Desired Characteristics of Low K Dielectrics3.)Low K Materials Evolution第五章CMOS Scaling (6学时)1.)The Basic Behavior of Long Channel Device2.)The Basic Behavior of Short Channel Device3.)CMOS Scaling TheoryA Advanced CMOS Integration Scheme (4学时)1.)STI and Well Formation2.)Gate Module, Source/Drain and Contacts第七章Introduction on How to Anchor a CMOS Research Program (4学时)1.)Overall Project Management Methodology2.)Device Design Methodology第八章SOI Technology (4学时)第九章GaAs Technology (3学时)第十章Silicon Bipolr Technology (3学时) | 
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