李秀妍 / 副教授

研究方向：半导体材料与器件
电子邮箱：xiuyanli@sjtu.edu.cn
办公电话：021-3420-4546-1058
办公地点：微电子楼412

个人简介
学术研究
授课教学
　　李秀妍，副教授，分别于2009、2012年于华东师范大学、同济大学物理系取得学士、硕士学位，2015年于日本东京大学取得工学博士学位，之后在美国罗格斯大学从事博士后研究工作。现任上海交通大学微纳电子学系长聘教轨副教授，博士生导师。
　　长期从事面向集成电路和电力电子的半导体器件物理和工艺研究。研究方向涉及高迁移率小尺寸MOS器件、新型铁电逻辑和存储器件、以及高功率宽禁带半导体器件的基础物理研究和工艺研发。迄今为止以第一作者在知名学术期刊和会议发表论文近30篇，在知名国际学术会议口头报告成果近20次，获得美国日本等学术相关奖励六项；此外，前后主持科研项目6项，包括国家自然科学基金重大研究计划培育项目、国家自然科学基金青年项目、上海市自然科学基金探索类项目、日本丸文财团海外交流项目、美国阿贡国家实验室项目等。

【研究方向】
1. 基于铁电薄膜的负电容晶体管、铁电存储器等新型逻辑运算和存储器件
2. 基于宽禁带半导体SiC和Ga₂O₃的高功率MOS器件
【论文发表】
电子器件领域顶级会议IEEE IEDM论文及报告
1. X.?Li*et al, “Direct relationship between sub-60 subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor, International Electron Device Meeting (IEDM), 2018, 31.3.
2. X.?Li*et al, “Self-decomposition of SiO₂?due to Si-chemical potential increase in SiO₂?between HfO₂?and substrate”, International Electron Device Meeting (IEDM), 2015, 21.4.
3. X.?Li*et al, “Analytical Formulation of SiO₂-IL Scavenging in HfO₂/SiO₂/Si Gate Stacks: A Key is the SiO₂/Si Interface Reaction.” International Electron Device Meeting (IEDM), 2014, 21.2.
代表性期刊论文
1. X.?Li*,and A. Toriumi,“Zigzag polarization switching due to depolarization feedback in metal/ferroelectric/metal paraelectric/metal system”,?Nature?Communication, 11,?(2020) 1895.
2. X.?Li*et al, Interface reaction kinetics in SiGe oxidation, Applied Physics Letter, 115,?(2019) 232901.
3. X.?Li*et al, “Effect of nitrogen passivation on interface composition and physical stress in SiO₂/SiC(4H) structures”, Applied Physics Letter, 113, (2018)131601.
4. X.?Li*et al, “Oxidation induced stress in SiO₂/SiC structure”, Applied Physics Letter, 110, (2017)141604.
5. X.?Li* et al, “Thermodynamic understanding and analytical modeling of interfacial SiO₂scavenging in HfO₂?gate stacks on Si, SiC and SiGe”, Applied Physics Letter, 110,?(2017)142903.
6. X.?Li*et al,?“Interfacial SiO₂?scavenging kinetics in HfO₂?gate stacks”, Applied Physics Letter, 109, (2016)202905.
7. X.?Li*et al, “Study of Si Kinetics?in Interfacial SiO₂?Scavenging in HfO₂/SiO₂/Si Stack.” Applied Physics Express,?8?(2015) 061304.
8. X.?Li* et al, “Effect of Si Substrate on Interfacial SiO₂Scavenging in HfO₂/SiO₂/Si Stacks.” Applied Physics?Letter,?105,?(2014) 182902.
代表性知名国际会议邀请报告及口头报告（含论文）?
1. X.?Li*et al, “Impact of substrate orientation on the structure of SiO₂/SiC interface”, International Conference on Silicon Carbide Related Materials (ICSCRM), Sep. 28^th-Oct. 04^th, 2019, Kyoto, Japan. (口头报告)
2. (邀请报告)X. Li?et al, “Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor”, Silicon Device and Materials, Jan. 30^th, 2019.
3. X.?Li*et al, “Mechanism of Nitrogen Passivation of the SiO2/SiC(4H-0001) MOS structure: Interface Composition, Physical Stress and Electrical Quality”, IEEE Semiconductor Interface Specialists Conference (IEEE SISC), Dec. 5-8^th, 2018, San Diego, USA. (口头报告)
4. X.?Li*et al, “Impact of “struggle for oxygen” at oxidized interface on SiGe gate stacks”, 2018 International Conference on Solid State Devices and Materials (SSDM), Sep. 9-13^th, 2018, Tokyo, Japan. (口头报告)
5. (Highlight talk in?ICSCRM) X. Li,?A. Ermakov, V. Amarasinghe, T. Gustafsson, L. C Feldman and E. Garfunkel, “In-situ study of stress formation and relaxation during thermal oxidation of SiC”, 2017 International Conference on Silicon Carbide Related Materials (ICSCRM), Sep 17^th-22^nd, 2017, Washington DC, USA.(口头报告)
6. X.?Li*et al, “The SiO₂/4H-SiC interfaces: Physical stress, material density and carbon retention”, 2017 Material Research Society fall meeting, Nov. 26^th-Dec. 1^st, 2017, Boston, USA. (口头报告)
7.?X.?Li* et al,“Oxidation induced stress in SiO₂/SiC system”, 2016 International Conference on Solid State Devices and Materials (SSDM), Sep. 26-29^th, 2016, Tsukuba, Japan. (口头报告)
8.?X.?Li*et al, “Comprehensive understanding of SiO₂-IL scavenging in HfO₂/SiO₂/Si stack”, Will be presented International Conference on Solid State Devices and Materials (SSDM), Sep. 27-30^th, 2015, Sapporo, Japan.
9. (邀请报告)X. Li*?et al, “Analytical Formulation of SiO₂-IL Scavenging in HfO₂/SiO₂/Si Gate Stacks”, Silicon Device and Materials (SDM), Jan. 27^th, 2015, Tokyo, Japan
10.?X.?Li,T. Yajima, T. Nishimura and A. Toriumi, “The critical role of Si chemical potential in SiO₂?scavenging in HfO₂?gate stacks”, The 76^th?Autumn Japanese Society of Applied Physics (JSAP), Sep. 13-16^th, 2015, Nagoya, Japan. Young paper award in JSAP

本科生专业必修课：《半导体器件原理》