摘要/Abstract

作为一种宽禁带绝缘材料，氮化硼由于其高导热性、强化学惰性和高热稳定性在热界面材料、光催化和电催化以及储能材料方面引起了广泛的研究兴趣.低维氮化硼纳米结构，如二维纳米片、一维纳米管、纳米棒、纳米线、零维纳米球和量子点等，具有高热导率（600 W/mK）和超宽带隙（5～6 eV），在高导热复合材料、热电材料及电子封装材料等领域具有很好的应用前景，其制备技术及相关性能研究是近年来材料科学领域的热点之一.主要详述了目前水热法制备低维氮化硼（BN）纳米结构的研究进展及存在的问题，并指出深入研究合成机理、研发新型水热制备方法将是今后本领域的重点研究方向.
关键词: 氮化硼, 水热合成, 热导率, 纳米结构, 电子封装
As an ultra-wide bandgap insulating material, boron nitride has attracted intense interest due to its high thermal conductivity, high chemical and thermal stability as well as their applications in thermal interface materials, photo/electro-catalysis, and energy storage. As for the low dimensional boron nitride nanostructures, e.g., nanosheets, nanotubes, nanorods, nanowires, nanospheres, and quantum dots, the high thermal conductivity (600 W/mK) and the ultra-large bandgap (5~6 eV) make them the promising candidate for thermal conductive composites, thermoelectric materials and electronic packaging materials, which gives rise to the hot research topic on the synthesis and properties of the boron nitride nanostructures. In this review, the recent advances in the hydrothermal synthesis of boron nitride nanostructures will be fully discussed, and the remarks on the issues need to be addressed, the comprehensive understanding of the mechanism and the new approaches for the hydrothermal synthesis will be proposed in the end.
Key words: boron nitride, hydrothermal synthesis, thermal conductivity, nanostructure, electronic packaging


PDF全文下载地址:

点我下载PDF